Method for high-performance traceability query oriented to multi-chain data association

    公开(公告)号:US11714836B2

    公开(公告)日:2023-08-01

    申请号:US17455502

    申请日:2021-11-18

    Abstract: The present invention relates a method for high-performance traceability query oriented to multi-chain data association, comprising: identifying a target transaction needing the traceability query; searching out all corresponding target chains based on cross-chain transaction data association; making query requests parallelly; and executing the query among the target chains according to a key value of the target transaction and returning query results. The blockchain traceability query method proposed by the present invention is different from serialized block data query conducted in the chain-type structure, and the disclosed cross-chain query operation can be parallelly executed, leading to improved efficiency of traceability query. Opposite to the conventional blockchain where blocks are used as nodes of chains, the present invention directly uses sub blockchains as nodes of the SRB. Since sub blockchains can be dynamically added or removed, the present invention enhances the scalability of the entire system.

    NON-VOLATILE BOOLEAN LOGIC CIRCUIT BASED ON MEMRISTORS AND OPERATION METHOD THEREOF

    公开(公告)号:US20230170908A1

    公开(公告)日:2023-06-01

    申请号:US17794620

    申请日:2021-07-05

    CPC classification number: H03K19/1776 G11C13/004 G11C13/0069 H03K19/21

    Abstract: A non-volatile Boolean logic circuit based on memristors and an operation method, which performs logic operations on the input logic value P and/or the input logic value Q. The logic circuit includes: a controller, a memristor M1, a memristor M2 and a resistor. The controller sets the memristor M2 to a high resistance state before performing the logic operation. When performing the logic operation, a voltage A is applied to the memristor M1, a voltage B is applied to the memristor M2, a voltage C is applied to the resistor. The resistance state of the memristor M2 is the result of the logic operation. When a logic operation is performed on the logic value P and the logic value Q or only on the logic value Q, the controller further sets the memristor M1 to the resistance state corresponding to the logic value Q before performing the logic operation.

    PASSIVE EXOSKELETON BASED ON ENERGY FLOW CHARACTERISTICS OF FOOT-ANKLE COMPLEX

    公开(公告)号:US20230150114A1

    公开(公告)日:2023-05-18

    申请号:US17864338

    申请日:2022-07-13

    CPC classification number: B25J9/0006 A61H1/0266 A61H2201/1642 A61H2003/007

    Abstract: A passive exoskeleton based on energy flow characteristics of a foot-ankle complex includes a first passive exoskeleton. The first passive exoskeleton includes an energy distribution mechanism, a strike-recipient mechanism and a wearing fixing assembly. The energy distribution mechanism is connected to the strike-recipient mechanism, and the energy distribution mechanism is also connected to the wearing fixing assembly. The energy distribution mechanism includes a ratchet wheel shaft, a left torsional spring, a right torsional spring and a middle guide wheel respectively sleeved on the ratchet wheel shaft. The middle guide wheel is connected to the wearing fixing assembly through an ankle joint power-assisted cord. The ratchet wheel shaft is connected to the strike-recipient mechanism, the strike-recipient mechanism drives the ratchet wheel shaft to rotate, and the ratchet wheel shaft drives the left torsional spring, the right torsional spring and the middle guide wheel to rotate.

    FPGA-based dynamic graph processing method

    公开(公告)号:US11609787B2

    公开(公告)日:2023-03-21

    申请号:US16947055

    申请日:2020-07-16

    Abstract: The present disclosure relates to an FPGA-based dynamic graph processing method, comprising: where graph mirrors of a dynamic graph that have successive timestamps define an increment therebetween, a pre-processing module dividing the graph mirror having the latter timestamp into at least one path unit in a manner that incremental computing for any vertex only depends on a preorder vertex of that vertex; an FPGA processing module storing at least two said path units into an on-chip memory directly linked to threads in a manner that every thread unit is able to process the path unit independently; the thread unit determining an increment value between the successive timestamps of the preorder vertex while updating a state value of the preorder vertex, and transferring the increment value to a succeeding vertex adjacent to the preorder vertex in a transfer direction determined by the path unit, so as to update the state value of the succeeding vertex.

    Chalcogenide phase change material based all-optical switch and manufacturing method therefor

    公开(公告)号:US11609443B2

    公开(公告)日:2023-03-21

    申请号:US16764403

    申请日:2018-06-07

    Abstract: Disclosed in the present invention are a chalcogenide phase change material based all-optical switch and a manufacturing method therefor, relating to the field of optical communications. The all-optical switch comprises: stacked in sequence, a cover layer film, a chalcogenide phase change material film, an isolation layer film, a silicon photonic crystal, and a substrate. The silicon photonic crystal comprises a nano-porous structure such that the silicon photonic crystal has a Fano resonance effect. When the all-optical switch is used, the state of the chalcogenide phase change material film is controlled by means of laser, and the resonance state of the silicon photonic crystal is modulated to implement modulation of signal light transmissivity; the modulation range is within a communication band from 1500 nm to 1600 nm, thereby implementing an optical switch. The all-optical switch of the present invention has the characteristics of high contrast ratio, high rate and low loss.

    METHOD AND SYSTEM FOR CORRECTING LITHOGRAPHY PROCESS HOTSPOTS BASED ON STRESS DAMPING ADJUSTMENT

    公开(公告)号:US20230046115A1

    公开(公告)日:2023-02-16

    申请号:US17564241

    申请日:2021-12-29

    Abstract: A method and a system for correcting lithography process hotspots based on stress damping adjustment are provided. The method includes: acquiring a mark hotspot of a mask pattern; forming N annuli centered on the mark hotspot from inner to outer on a mask; moving vertexes of the mask pattern located in each annulus by a specific distance in a direction deviating from the mark hotspot and connecting the moved vertexes according to an original connection relationship to acquire an updated layout; verifying electrical characteristics of the updated layout, determining whether a deviation of the electrical characteristics of the updated layout is within a tolerable range, and performing geometric correction to compensate for a deviation of electrical parameters if no is determined and then ending correction, or ending the correction if yes is determined.

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