公开(公告)号：US20200126955A1

公开(公告)日：2020-04-23

申请号：US16198790

申请日：2018-11-22

Applicant: Lextar Electronics Corporation

Inventor： Fu-Hsin CHEN ,  Yu-Chun LEE

IPC: H01L25/075 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60

Abstract: A display device includes a driving substrate, multiple light-emitting elements, first and second transparent substrates, multiple pixels, and a patterned light-absorbing layer. The light-emitting elements are disposed on the driving substrate and used to emit a light. The first transparent substrate is disposed over the driving substrate and the light-emitting elements and includes at least one groove. The pixels are disposed in the groove and include a first sub-pixel, a second sub-pixel, and a third sub-pixel respectively aligned with one of the light-emitting elements. The second transparent substrate covers the first transparent substrate and the pixels. The patterned light-absorbing layer is disposed on the second transparent substrate and includes multiple first openings respectively aligned with the first, second, and third sub-pixels. The first, second, and third sub-pixels correspond to the light emitted by the light-emitting elements to respectively emit a red light, a green light, and a blue light.

公开(公告)号：US20200066954A1

公开(公告)日：2020-02-27

申请号：US16541132

申请日：2019-08-14

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO

IPC: H01L33/62 ,  H01L33/42 ,  H01L33/52 ,  H01L33/22

Abstract: A light emitting diode includes a base layer, an electric contact layer, a semiconductor stack, and an insulation layer. The base layer has a maximum of a first width. The electric contact layer has a maximum of a second width and is disposed on the base layer. The semiconductor stack disposed on the electric contact layer has a maximum of a third width, and includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer stacked in sequence, wherein a width of the first type semiconductor layer is smaller than the maximum of the third width. The insulation layer covers the sidewalls of the base layer, the electric contact layer, and the semiconductor stack. The maximum of the second width is greater than the maximum of the third width and the maximum of the second width is less than the maximum of the first width.

公开(公告)号：US20190199326A1

公开(公告)日：2019-06-27

申请号：US16109771

申请日：2018-08-23

Applicant: Lextar Electronics Corporation

Inventor： Tsung-Yuan LAI ,  Chien-Shen HUNG ,  Hsien-Chih HO

IPC: H03H11/04 ,  H03K7/08

Abstract: A filter circuit comprises a resistor-capacitor (RC) circuit, a comparator circuit, and an output control circuit. The RC circuit is configured to generate a ripple voltage according to the PWM signal. The comparator circuit couples with the RC circuit, and is configured to compare the ripple voltage with a first reference voltage, and output a switch signal according to a comparison result. The output control circuit couples with the comparator circuit and the RC circuit, and is configured to generate an output signal according to the switch signal and the PWM signal. When a duty ratio of the PWM signal is larger than a predetermined threshold value, the output signal is corresponding to the PWM signal. When the duty ratio of the PWM signal is smaller than the predetermined threshold value, the output signal is not corresponding to the PWM signal.

公开(公告)号：US10312408B2

公开(公告)日：2019-06-04

申请号：US15722368

申请日：2017-10-02

Applicant: Lextar Electronics Corporation

Inventor： Che-Hsuan Huang ,  Hsin-Lun Su ,  Shu-Hsiu Chang ,  Chih-Hao Lin ,  Tzong-Liang Tsai

IPC: H01L33/08 ,  H01L33/50 ,  H01L33/56

Abstract: A light emitting diode chip scale packaging structure and a direct type backlight module are disclosed. The light emitting diode chip scale packaging structure includes a light emitting diode chip, a wavelength converting layer, a diffusion structure and a lens. The wavelength converting layer is disposed on the light emitting diode chip and directly contacting the light emitting diode chip, and the wavelength converting layer includes phosphor powders. The diffusion structure covers the light emitting diode chip and the wavelength converting layer, a ratio of a height of the diffusion structure to a width of the diffusion structure is 1:2 to 5:4, and the lens covers the diffusion structure. An outer surface of the lens is a free-form surface, and a material of the lens is different from a material of the diffusion structure.

公开(公告)号：US20180122999A1

公开(公告)日：2018-05-03

申请号：US15793026

申请日：2017-10-25

Applicant: Lextar Electronics Corporation

Inventor： Ching-Yi Chen ,  Wen-Wan Tai ,  Yu-Chun Lee ,  Tzong-Liang Tsai

IPC: H01L33/50 ,  H01L33/56 ,  C09K11/77 ,  F21K9/64 ,  F21V9/16 ,  C09K11/72 ,  H01L33/00

CPC classification number: H01L33/502 ,  C09K11/727 ,  C09K11/7774 ,  F21K9/64 ,  F21V9/30 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/507 ,  H01L33/56 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A wavelength-converting film and a light emitting device and a display device using the same are disclosed. The wavelength converting film comprises a fluoride phosphor powder with a Mn4+ as an activator, wherein the fluoride phosphor powder with the Mn4+ as the activator comprises a sheet-like crystal and has a chemical formula of A2[MF6]:Mn4+, wherein A is Li, Na, K, Rb, Cs, NH4, or a combination thereof, and M is Ge, Si, Sn, Ti, Zr, or a combination thereof.

公开(公告)号：US20180122853A1

公开(公告)日：2018-05-03

申请号：US15792743

申请日：2017-10-24

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO

IPC: H01L27/15 ,  H01L23/62 ,  H01L33/06 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L27/15 ,  H01L23/62 ,  H01L33/06 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting diode (LED) chip includes a substrate, a light-emitting component, an electrical static discharge (ESD) protection component, and a conductive layer. The light-emitting component is disposed on the substrate and includes a first semiconductor layer, a first quantum well layer, and a second semiconductor layer, in which the first quantum well layer is disposed between the first and second semiconductor layers. The ESD protection component is disposed on the substrate and includes a third semiconductor layer, a second quantum well layer, and a fourth semiconductor layer, in which the second quantum well layer is disposed between the third and the fourth semiconductor layers. The first and the fourth semiconductor layers are electrically connected with each other through the conductive layer, and the second and the third semiconductor layers are electrically isolated from each other before packaging the LED chip.

公开(公告)号：US09900940B2

公开(公告)日：2018-02-20

申请号：US15008490

申请日：2016-01-28

Applicant: Lextar Electronics Corporation

Inventor： En-Min Wu ,  Hsien-Chih Ho

IPC: H05B33/08 ,  F21K9/238 ,  F21V23/00 ,  F21Y115/10 ,  F21V23/02 ,  F21K9/232

CPC classification number: H05B33/0815 ,  F21K9/232 ,  F21K9/238 ,  F21V23/005 ,  F21V23/02 ,  F21Y2115/10 ,  H05B33/0845 ,  H05B33/0887

Abstract: A light-emitting diode (LED) device including an LED module and a driver is provided. The LED module includes a voltage sensing module and an LED. The voltage sensing module generates a reference voltage. The driver includes a power converting module, a current processing module, a feedback module and a controller module. The power converting module converts an alternating current (AC) into a driving current for driving the LED to emit a light. The current processing module converts the driving current into a sensing voltage. The feedback module compares the sensing voltage with a reference voltage and outputs a level signal according to a magnitude relationship of the sensing voltage and the reference voltage. The controller module outputs a pulse width modulation (PWM) signal to the power converting module according to the level signal. The power converting module controls the magnitude of the driving current according to the PWM signal.

公开(公告)号：US09876145B2

公开(公告)日：2018-01-23

申请号：US14936074

申请日：2015-11-09

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi Kuo ,  Wen-Yuan Fan

IPC: H01L33/38 ,  H01L33/44 ,  H01L33/40

CPC classification number: H01L33/382 ,  H01L33/405 ,  H01L33/44

Abstract: A flip-chip light emitting diode chip includes a first semiconductor structure, which includes a P-type semiconductor layer, a N-type semiconductor layer, openings, a reflective layer, a barrier layer, a passivation layer, and an electrical contact layer. The openings penetrate the P-type semiconductor layer and a part of the N-type semiconductor layer so as to partially expose the N-type semiconductor layer. The reflective layer is disposed on the P-type semiconductor layer. The barrier layer is disposed on the reflective layer, and the area of the barrier layer is smaller than that of the reflective layer therefore the reflective layer is exposed from the barrier layer. The passivation layer is disposed on the barrier layer and partially fills in the openings. The electrical contact layer disposed on the passivation layer partially penetrates through the passivation layer to contact the exposed part of the N-type semiconductor layer.

公开(公告)号：US20180019575A1

公开(公告)日：2018-01-18

申请号：US15638356

申请日：2017-06-29

Applicant: Lextar Electronics Corporation

Inventor： Te-Chung WANG ,  Shiou-Yi KUO ,  Jun-Rong CHEN

IPC: H01S5/32 ,  H01L33/60 ,  H01S5/042 ,  H01S5/18

CPC classification number: H01S5/3211 ,  H01L33/60 ,  H01S5/0425 ,  H01S5/18 ,  H01S5/20

Abstract: A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.

公开(公告)号：US09812614B2

公开(公告)日：2017-11-07

申请号：US15176102

申请日：2016-06-07

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Shiou-Yi Kuo ,  Shih-Huan Lai

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/38 ,  H01L33/62 ,  H01L33/46

CPC classification number: H01L33/405 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62

Abstract: A light-emitting device is provided, including: a substrate; a reflective layer disposed on the substrate; a patterned contact layer disposed on the reflective layer; a light-emitting unit disposed on the patterned contact layer; a first electrode disposed on a top surface of the light-emitting unit; and a second electrode disposed on a bottom surface of the light-emitting unit; wherein a projection of the first electrode on the substrate and a projection of the patterned contact layer on the substrate are complementary to each other.