公开(公告)号：US20220373465A1

公开(公告)日：2022-11-24

申请号：US17714035

申请日：2022-04-05

Applicant: NOVA LTD

Inventor： Yonatan OREN

IPC: G01N21/65 ,  G01N21/95 ,  G03F7/20

Abstract: A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: performing measurements on a patterned structure by illuminating the structure with exciting light to cause Raman scattering of one or more excited regions of the pattern structure, while applying a controlled change of at least temperature condition of the patterned structure, and detecting the Raman scattering, and generating corresponding measured data indicative of a temperature dependence of the detected Raman scattering; and analyzing the measured data and generating data indicative of spatial profile of one or more properties of the patterned structure.

公开(公告)号：US20220326159A1

公开(公告)日：2022-10-13

申请号：US17694782

申请日：2022-03-15

Applicant: NOVA LTD.

Inventor： Gilad Barak ,  Yanir HAINICK ,  Yonatan OREN ,  Vladimir Machavariani

IPC: G01N21/65 ,  G01B11/06 ,  G01N21/95 ,  G03F7/20 ,  H01L21/66 ,  G01L1/24

Abstract: A method for use in measuring one or more characteristics of patterned structures, the method including providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the one or more characteristics to be measured, processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme, and analyzing the distribution of Raman-contribution efficiency and determining the one or more characteristics of the structure.

公开(公告)号：US20220208620A1

公开(公告)日：2022-06-30

申请号：US17607044

申请日：2020-04-28

Applicant: NOVA LTD

Inventor： MICHAEL SHIFRIN ,  AVRON GER

IPC: H01L21/66 ,  G06F30/367 ,  G06F30/398

Abstract: Controlling semiconductor device manufacture by acquiring training scatterometric signatures collected at training locations on training semiconductor wafers and corresponding to locations within a predefined design of a training semiconductor device, the training signatures collected after predefined processing steps during manufacture of the device on the training wafers, acquiring manufacturing outcome data associated with the training locations, training a prediction model using the training signatures and the manufacturing outcome data, and applying the prediction model to a candidate scatterometric signature to predict a manufacturing outcome, the candidate signature collected at a candidate location on a candidate semiconductor wafer, the candidate location corresponding to a location within the same predefined design of a candidate semiconductor device, the candidate signature collected after any of the processing steps during manufacture of the candidate device on the candidate wafer.

公开(公告)号：US20220163320A1

公开(公告)日：2022-05-26

申请号：US17453338

申请日：2021-11-02

Applicant: NOVA LTD.

Inventor： Boaz Brill ,  Boris Sherman ,  Igor Turovets

IPC: G01B11/02 ,  G03F7/20 ,  H01L21/66 ,  G01N21/95

Abstract: A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.

公开(公告)号：US11300948B2

公开(公告)日：2022-04-12

申请号：US16454242

申请日：2019-06-27

Applicant: GLOBALFOUNDRIES INC. ,  NOVA LTD.

Inventor： Taher Kagalwala ,  Alok Vaid ,  Shay Yogev ,  Matthew Sendelbach ,  Paul Isbester ,  Yoav Etzioni

IPC: G05B19/418 ,  G05B13/02

Abstract: A process control method for manufacturing semiconductor devices, including determining a quality metric of a production semiconductor wafer by comparing production scatterometric spectra of a production structure of the production wafer with reference scatterometric spectra of a reference structure of reference semiconductor wafers, the production structure corresponding to the reference structure, the reference spectra linked by machine learning to a reference measurement value of the reference structure, determining a process control parameter value (PCPV) of a wafer processing step, the PCPV determined based on measurement of the production wafer and whose contribution to the PCPV is weighted with a first predefined weight based on the quality metric, and based on a measurement of a different wafer and whose contribution to the PCPV is weighted with a second predefined weight based on the quality metric, and controlling, with the PCPV, the processing step during fabrication.

公开(公告)号：US20220074878A1

公开(公告)日：2022-03-10

申请号：US17448081

申请日：2021-09-20

Applicant: Nova Ltd. ,  GLOBALFOUNDRIES U.S. INC.

Inventor： Wei Lee ,  Heath A. Pois ,  Mark Klare ,  Cornel Bozdog ,  Alok Vaid

IPC: G01N23/2273 ,  H01L21/66 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223

Abstract: A monitoring system and method are provided for determining at least one property of an integrated circuit (IC) comprising a multi-layer structure formed by at least a layer on top of an underlayer. The monitoring system receives measured data comprising data indicative of optical measurements performed on the IC, data indicative of x-ray photoelectron spectroscopy (XPS) measurements performed on the IC and data indicative of x-ray fluorescence spectroscopy (XRF) measurements performed on the IC. An optical data analyzer module analyzes the data indicative of the optical measurements and generates geometrical data indicative of one or more geometrical parameters of the multi-layer structure formed by at least the layer on top of the underlayer. An XPS data analyzer module analyzes the data indicative of the XPS measurements and generates geometrical and material related data indicative of geometrical and material composition parameters for said layer and data indicative of material composition of the underlayer. An XRF data analyzer module analyzes the data indicative of the XRF measurements and generates data indicative of amount of a predetermined material composition in the multi-layer structure. A data interpretation module generates combined data received from analyzer modules and processes the combined data and determines the at least one property of at least one layer of the multi-layer structure.

公开(公告)号：US11150190B2

公开(公告)日：2021-10-19

申请号：US16945975

申请日：2020-08-03

Applicant: NOVA LTD.

Inventor： Gilad Barak ,  Yanir Hainick ,  Yonatan Oren

IPC: G01N21/65 ,  G01B11/06 ,  G01N21/95 ,  G03F7/20 ,  H01L21/66 ,  G01L1/24

Abstract: A method and system are presented for use in measuring characteristic(s) of patterned structures. The method utilizes processing of first and second measured data, wherein the first measured data is indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of illuminating and/or collected light conditions corresponding to the characteristic(s) to be measured, and the second measured data comprises at least one spectrum obtained from the patterned structure in Optical Critical Dimension (OCD) measurement session. The processing comprises applying model-based analysis to the at least one Raman spectrum and the at least one OCD spectrum, and determining the characteristic(s) of the patterned structure under measurements.

公开(公告)号：US20250027767A1

公开(公告)日：2025-01-23

申请号：US18772302

申请日：2024-07-15

Applicant: NOVA LTD

Inventor： EITAN A. ROTHSTEIN ,  YONGHA KIM ,  ILYA RUBINOVICH ,  ARIEL BROITMAN ,  OLGA KRASNYKOV ,  BARAK BRINGOLTZ

IPC: G01B11/30 ,  G03F7/00

Abstract: A system and methods for OCD metrology are provided including receiving training data for training an OCD machine learning (ML) model, including multiple pairs of corresponding sets of scatterometric data and reference parameters. For each of the pairs, one or more corresponding outlier metrics are by calculated and corresponding outlier thresholds are applied whether a given pair is an outlier pair. The OCD ML model is then trained with the training data less the outlier pairs.

公开(公告)号：US12196691B2

公开(公告)日：2025-01-14

申请号：US18346778

申请日：2023-07-03

Applicant: NOVA LTD.

Inventor： Gilad Barak

IPC: G01N23/20 ,  G01N23/201 ,  G01N23/2055 ,  G06T5/70 ,  G06T7/00 ,  H01L21/66 ,  G01N23/207

Abstract: A method and system are presented for use in X-ray based measurements on patterned structures. The method comprises: processing data indicative of measured signals corresponding to detected radiation response of a patterned structure to incident X-ray radiation, and subtracting from said data an effective measured signals substantially free of background noise, said effective measured signals being formed of radiation components of reflected diffraction orders such that model based interpretation of the effective measured signals enables determination of one or more parameters of the patterned structure, wherein said processing comprises: analyzing the measured signals and extracting therefrom a background signal corresponding to the background noise; and applying a filtering procedure to the measured signals to subtract therefrom signal corresponding to the background signal, resulting in the effective measured signal.

公开(公告)号：US12152869B2

公开(公告)日：2024-11-26

申请号：US17453338

申请日：2021-11-02

Applicant: NOVA LTD.

Inventor： Boaz Brill ,  Boris Sherman ,  Igor Turovets

IPC: G01B11/02 ,  G01N21/95 ,  G03F7/00 ,  H01L21/66

Abstract: A method and system are presented for monitoring measurement of parameters of patterned structures based on a predetermined fitting model. The method comprises: (a) providing data indicative of measurements in at least one patterned structure; and (b) applying at least one selected verification mode to said data indicative of measurements, said at least one verification mode comprising: I) analyzing the data based on at least one predetermined factor and classifying the corresponding measurement result as acceptable or unacceptable, II) analyzing the data corresponding to the unacceptable measurement results and determining whether one or more of the measurements providing said unacceptable result are to be disregarded, or whether one or more parameters of the predetermined fitting model are to be modified.