公开(公告)号：US20220407011A1

公开(公告)日：2022-12-22

申请号：US17773307

申请日：2020-10-30

Applicant: SOULBRAIN CO., LTD.

Inventor： Kwang Ju JUNG ,  Jong Jin HA ,  Seok Jong LEE ,  Hyun Young YOO ,  Eun Chul SHIN

IPC: H01L51/00 ,  C07D403/10

Abstract: The present invention relates to an organic compound, an organic light-emitting diode including the organic compound, and a display device including the organic light-emitting diode. More particularly, the present invention relates to an organic compound including a compound presented by Chemical Formula 1 and being capable of improving luminous efficacy, thermal stability, and lifespan properties, an organic light-emitting diode including the organic compound, and a display device including the organic light-emitting diode.

公开(公告)号：US11414569B2

公开(公告)日：2022-08-16

申请号：US17090905

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan Park ,  Jung-Hun Lim ,  Jin-Uk Lee

IPC: C09G1/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/1157 ,  H01L21/311 ,  H01L21/762

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US20210079266A1

公开(公告)日：2021-03-18

申请号：US17090909

申请日：2020-11-06

Applicant: SOULBRAIN CO., LTD.

Inventor： Jae-Wan PARK ,  Jung-Hun LIM ,  Jin-Uk LEE

IPC: C09G1/04 ,  H01L21/3105 ,  H01L21/02 ,  H01L27/11582 ,  H01L27/1157 ,  H01L21/311

Abstract: The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US20210054286A1

公开(公告)日：2021-02-25

申请号：US17093662

申请日：2020-11-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20210054285A1

公开(公告)日：2021-02-25

申请号：US17093658

申请日：2020-11-10

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/306 ,  H01L21/311

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof, and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20200263087A1

公开(公告)日：2020-08-20

申请号：US15781471

申请日：2016-10-28

Applicant: SOULBRAIN CO., LTD.

Inventor： Jung Hun LIM ,  Jin Uk LEE ,  Jae Wan PARK

IPC: C09K13/06 ,  H01L21/311 ,  H01L21/306

Abstract: A composition for etching and a method of manufacturing a semiconductor device, the method including an etching process of using the composition for etching, are provided. The composition for etching includes a first inorganic acid; any one first additive selected from the group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof; and a solvent. The composition for etching is a high-selectivity composition for etching that can selectively remove a nitride film while minimizing the etch rate for an oxide film and does not have a problem such as particle generation, which adversely affects device characteristics.

公开(公告)号：US20200235309A1

公开(公告)日：2020-07-23

申请号：US16676441

申请日：2019-11-07

Applicant: SOULBRAIN CO., LTD.

Inventor： Kwang Ju JUNG ,  Sung Soo KIM ,  Hyun Young YOO ,  Jong Jin HA ,  Seok Jong LEE ,  Chun Young LEE

IPC: H01L51/00 ,  C07D403/10 ,  C07D405/14

Abstract: Provided are a compound represented by the following Chemical Formulas and an organic light emitting device comprising the same.

公开(公告)号：US20200212309A1

公开(公告)日：2020-07-02

申请号：US16728273

申请日：2019-12-27

Applicant: LG Display Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Hyong-Jong CHOI ,  Tae-Ryang HONG ,  Jun-Yun KIM ,  Jin Hee KIM ,  Ah-Rang LEE

IPC: H01L51/00 ,  C09K11/06

Abstract: The present disclosure provides an organic light emitting diode comprising a first electrode; a second electrode facing the first electrode; and an emitting material layer. The emitting material layer includes a p-type host, a n-type host and a phosphorescent dopant and positioned between the first electrode and the second electrode, wherein a first energy level of a HOMO of the p-type host is equal to or lower than a second energy level of a HOMO of the n-type host, and a difference between an energy level of a singlet state of the n-type host and an energy level of a triplet state of the n-type host is greater than 0.3 eV and smaller than 0.5 eV.

公开(公告)号：US20200079999A1

公开(公告)日：2020-03-12

申请号：US16387892

申请日：2019-04-18

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Yongtae KIM ,  Junghun LIM ,  SOOJIN KIM ,  JUNG-MIN OH ,  SEUNGMIN JEON ,  HAYOUNG JEON

IPC: C09K13/08 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: Provided are an etching composition and a method for manufacturing a semiconductor device using the same. According to embodiments, the etching composition may comprise from about 15 wt % to about 75 wt % of peracetic acid; a fluorine compound; an amine compound; and an organic solvent.

公开(公告)号：US20200024517A1

公开(公告)日：2020-01-23

申请号：US16579866

申请日：2019-09-24

Applicant: SOULBRAIN CO., LTD.

Inventor： Jin Uk LEE ,  Jae Wan PARK ,  Jung Hun LIM

IPC: C09K13/06 ,  H01L21/311 ,  H01L27/11556 ,  H01L29/66 ,  H01L21/02

Abstract: The disclosure is related to a composition for etching, a method for manufacturing the composition, and a method for fabricating a semiconductor using the same. The composition may include a first inorganic acid, at least one of silane inorganic acid salts produced by reaction between a second inorganic acid and a silane compound, and a solvent. The second inorganic acid may be at least one selected from the group consisting of a sulfuric acid, a fuming sulfuric acid, a nitric acid, a phosphoric acid, and a combination thereof.