公开(公告)号：US20210082684A1

公开(公告)日：2021-03-18

申请号：US17101428

申请日：2020-11-23

Applicant: ASM IP HOLDING B.V.

Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore ,  Atsuki Fukazawa ,  Hideaki Fukuda ,  Suvi P. Haukka

IPC: H01L21/02

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

公开(公告)号：US10468251B2

公开(公告)日：2019-11-05

申请号：US15650686

申请日：2017-07-14

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Toshiharu Watarai

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01L21/308 ,  C23C16/455 ,  C23C16/34

Abstract: A method of forming spacers for spacer-defined multiple pattering (SDMP), includes: depositing a pattern transfer film by PEALD on the entire patterned surface of a template using halogenated silane as a precursor and nitrogen as a reactant at a temperature of 200° C. or less, which pattern transfer film is a silicon nitride film; dry-etching the template using a fluorocarbon as an etchant, and thereby selectively removing a portion of the pattern transfer film formed on a top of a core material and a horizontal portion of the pattern transfer film while leaving the core material and a vertical portion of the pattern transfer film as a vertical spacer, wherein a top of the vertical spacer is substantially flat; and dry-etching the core material, whereby the template has a surface patterned by the vertical spacer on a underlying layer.

公开(公告)号：US10186420B2

公开(公告)日：2019-01-22

申请号：US15787342

申请日：2017-10-18

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa

IPC: H01L21/02

Abstract: Methods for depositing silicon-containing thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including one or more deposition cycles including contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods a deposition cycle can also including contacting the substrate with a carbon precursor.

公开(公告)号：US20180301342A1

公开(公告)日：2018-10-18

申请号：US15488318

申请日：2017-04-14

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Toshihisa Nozawa

IPC: H01L21/285 ,  H01L21/02 ,  C23C16/455 ,  C23C16/505 ,  C23C16/44 ,  C23C16/06 ,  C23C16/34 ,  H01J37/32

CPC classification number: H01L21/28556 ,  C23C16/06 ,  C23C16/34 ,  C23C16/347 ,  C23C16/4408 ,  C23C16/45536 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32449 ,  H01J2237/3321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28568

Abstract: An example method for manufacturing a semiconductor device includes forming a nitride, carbide, or metal film on a substrate in a chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, purging an interior of the chamber, forming an oxide film on the substrate in the chamber using PE-ALD, Pulse-PE-CVD or PE-CVD, and supplying a reducing gas into the chamber to create a reduction atmosphere and purging the interior of the chamber. The forming of the nitride film, carbide, or metal, purging, forming an oxide film, and supplying the reducing gas may be repeated a plurality of times.

公开(公告)号：US20180223429A1

公开(公告)日：2018-08-09

申请号：US15879209

申请日：2018-01-24

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/04 ,  H01L21/02

CPC classification number: C23C16/45542 ,  C23C16/045 ,  C23C16/40 ,  C23C16/401 ,  C23C16/4405 ,  C23C16/45553 ,  C23C16/45565 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method for depositing an oxide film on a substrate by thermal ALD and PEALD, includes: providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by thermal ALD in the reaction chamber; and without breaking a vacuum, continuously depositing a second oxide film on the first oxide film by PEALD in the reaction chamber.

公开(公告)号：US20170342559A1

公开(公告)日：2017-11-30

申请号：US15491726

申请日：2017-04-19

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/34 ,  C23C16/50 ,  C23C16/24

CPC classification number: C23C16/45527 ,  C23C16/24 ,  C23C16/325 ,  C23C16/34 ,  C23C16/36 ,  C23C16/40 ,  C23C16/401 ,  C23C16/45531 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/50 ,  C23C16/505

Abstract: An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ALD conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, —NR2, or —OR.

公开(公告)号：US09812319B1

公开(公告)日：2017-11-07

申请号：US15203632

申请日：2016-07-06

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02326

Abstract: A method for forming a film filled in a trench of a substrate without seam or void includes: depositing a conformal SiN film in a trench of a substrate placed in a reaction space, using a halide compound as a precursor, until the trench is filled with the conformal SiN film serving as a filled film which has a seam and/or void; and then oxidizing the filled film without deposition of film to make the filled film expand until the seam and/or void of the filled film are/is diminished.

公开(公告)号：US20170250068A1

公开(公告)日：2017-08-31

申请号：US15592730

申请日：2017-05-11

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  H01J2237/3347 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31111

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

公开(公告)号：US20170243734A1

公开(公告)日：2017-08-24

申请号：US15048422

申请日：2016-02-19

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/31111

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

公开(公告)号：US09142393B2

公开(公告)日：2015-09-22

申请号：US13901372

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Tatsuhiro Okabe ,  Atsuki Fukazawa

IPC: B08B7/00 ,  H01J37/32 ,  C23C16/44 ,  B08B9/00 ,  B08B9/027 ,  B08B5/00

CPC classification number: H01J37/32862 ,  B08B5/00 ,  B08B7/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/027 ,  C23C16/4405 ,  H01J37/32091

Abstract: A method for cleaning a reaction chamber is conducted after depositing an oxide, nitride, or oxynitride film on a substrate in a reaction chamber having interior surfaces on which oxide, nitride, or oxynitride is accumulated as a result of the deposition, said oxide, nitride, or oxynitride being selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, metal oxide, metal nitride, and metal oxynitride. The method includes: oxidizing or nitriding the oxide, nitride, or oxynitride is accumulated on the interior surfaces of the reaction chamber, by RF-excited plasma of an oxygen- or nitrogen-containing gas in the absence of halide gas as a pre-cleaning step; and cleaning the interior surfaces of the reaction chamber, by RF-excited plasma of a halide cleaning gas.

Abstract translation: 在沉积氧化物，氮化物或氧氮化物的内表面上沉积氧化物，氮化物或氮氧化物膜的反应室中沉积氧化物，氮化物或氧氮化物膜后，进行反应室的清洗方法，所述氧化物，氮化物 或氧氮化物选自氧化硅，氮化硅，氮氧化硅，金属氧化物，金属氮化物和金属氮氧化物。 该方法包括：在不存在卤化物气体的情况下，氧化物，氮化物或氮氧化物积聚在反应室的内表面上的RF激发的含氧气体或含氮气体的等离子体作为预清洁 步; 并通过卤化物清洁气体的RF激发等离子体清洁反应室的内表面。