公开(公告)号：US20190043711A1

公开(公告)日：2019-02-07

申请号：US15996062

申请日：2018-06-01

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  H01L21/033 ,  C23C16/455 ,  H01L21/28

CPC classification number: H01L21/02186 ,  C23C16/308 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02249 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28202 ,  H01L21/31111

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US09523148B1

公开(公告)日：2016-12-20

申请号：US14835465

申请日：2015-08-25

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: C23C16/30 ,  H01L21/02 ,  H01L21/311 ,  C23C16/455 ,  H01L21/28

CPC classification number: H01L21/02186 ,  C23C16/308 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02249 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28202 ,  H01L21/31111

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

Abstract translation: 提供了用于沉积可用于例如集成电路制造中的基本上无定形的氮氧化钛薄膜的方法，例如在间距倍增过程中形成间隔物。 该方法包括使底物与钛反应物接触并除去过量的钛反应物和反应副产物（如果有的话）。 然后将衬底与包含由等离子体产生的反应物质的第二反应物接触，其中一个反应性物质包含氮。 第二反应物和反应副产物（如果有的话）被除去。 重复接触和除去步骤，直至形成所需厚度的氮氧化钛薄膜。

公开(公告)号：US12080548B2

公开(公告)日：2024-09-03

申请号：US17370263

申请日：2021-07-08

Applicant: ASM IP HOLDING B.V.

Inventor： Elina Färm ,  Hidemi Suemori ,  Raija H. Matero ,  Antti Niskanen ,  Suvi P. Haukka ,  Eva Tois

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/32

CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/32

Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyurea or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

公开(公告)号：US12024772B2

公开(公告)日：2024-07-02

申请号：US17811978

申请日：2022-07-12

Applicant: ASM IP HOLDING B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/4583 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

公开(公告)号：US20230343601A1

公开(公告)日：2023-10-26

申请号：US18340261

申请日：2023-06-23

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/32 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768

CPC classification number: H01L21/31144 ,  H01L21/02186 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/02178 ,  H01L21/32 ,  C23C16/04 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02118 ,  H01L21/0228 ,  H01L21/31138 ,  H01L21/76834

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US11728175B2

公开(公告)日：2023-08-15

申请号：US17130902

申请日：2020-12-22

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/32 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/768

CPC classification number: H01L21/31144 ,  C23C16/04 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/02118 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0337 ,  H01L21/31138 ,  H01L21/32 ,  H01L21/32139 ,  H01L21/76834

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US20230011277A1

公开(公告)日：2023-01-12

申请号：US17808741

申请日：2022-06-24

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/285 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/768 ,  B05D1/00 ,  C23C16/04 ,  C23C16/455

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

公开(公告)号：US20220341040A1

公开(公告)日：2022-10-27

申请号：US17811978

申请日：2022-07-12

Applicant: ASM IP HOLDING B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

公开(公告)号：US20200251330A1

公开(公告)日：2020-08-06

申请号：US16742079

申请日：2020-01-14

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28 ,  H01L21/033

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US10453701B2

公开(公告)日：2019-10-22

申请号：US15486124

申请日：2017-04-12

Applicant: ASM IP Holding B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  H01L21/768 ,  H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/033 ,  H01L21/32 ,  H01L21/3213

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.