公开(公告)号：US10410857B2

公开(公告)日：2019-09-10

申请号：US14834290

申请日：2015-08-24

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore ,  Shang Chen ,  Ryoko Yamada ,  Dai Ishikawa ,  Kunitoshi Namba

IPC: H01L21/02

Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyl halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

公开(公告)号：US20190100837A1

公开(公告)日：2019-04-04

申请号：US16100855

申请日：2018-08-10

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore

IPC: C23C16/04 ,  C23C16/56 ,  C23C16/18 ,  C23C16/30 ,  C23C16/40 ,  C23C16/06 ,  C23C16/02 ,  H01L21/768 ,  H01L21/285 ,  C23C16/22 ,  C23C16/455

CPC classification number: C23C16/04 ,  C23C16/02 ,  C23C16/06 ,  C23C16/18 ,  C23C16/22 ,  C23C16/30 ,  C23C16/402 ,  C23C16/405 ,  C23C16/407 ,  C23C16/408 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76829 ,  H01L21/76849

Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

公开(公告)号：US20180190486A1

公开(公告)日：2018-07-05

申请号：US15707878

申请日：2017-09-18

Applicant: ASM IP Holding B.V.

Inventor： Toshiya Suzuki ,  Viljami J. Pore

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/033

Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

公开(公告)号：US10002755B2

公开(公告)日：2018-06-19

申请号：US15384028

申请日：2016-12-19

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28

CPC classification number: H01L21/02186 ,  C23C16/308 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45531 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/45553 ,  H01L21/02249 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0337 ,  H01L21/28202 ,  H01L21/31111

Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

公开(公告)号：US20170352533A1

公开(公告)日：2017-12-07

申请号：US15170769

申请日：2016-06-01

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/285 ,  H01L21/311 ,  C23C16/56 ,  C23C16/455 ,  C23C16/04 ,  H01L21/768 ,  B05D1/00

CPC classification number: H01L21/02118 ,  B05D1/60 ,  C23C16/04 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3065 ,  H01L21/76826 ,  H01L21/76834

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.

公开(公告)号：US12300505B2

公开(公告)日：2025-05-13

申请号：US18340261

申请日：2023-06-23

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Hidemi Suemori ,  Viljami J. Pore ,  Suvi P. Haukka ,  Varun Sharma ,  Jan Willem Maes ,  Delphine Longrie ,  Krzysztof Kachel

IPC: H01L21/311 ,  C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/033 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/768

Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.

公开(公告)号：US20250025911A1

公开(公告)日：2025-01-23

申请号：US18906537

申请日：2024-10-04

Applicant: ASM IP Holding B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: B05D1/00 ,  B05D1/36 ,  B05D3/14 ,  C23C16/30 ,  C23C16/455 ,  H01L21/02 ,  H01L21/67

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

公开(公告)号：US12138654B2

公开(公告)日：2024-11-12

申请号：US17808384

申请日：2022-06-23

Applicant: ASM IP HOLDING B.V.

Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

IPC: C23C16/455 ,  B05D1/00 ,  B05D1/36 ,  C23C16/30 ,  H01L21/02 ,  H01L21/67 ,  B05D3/14

Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

公开(公告)号：US11525184B2

公开(公告)日：2022-12-13

申请号：US17331971

申请日：2021-05-27

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore

IPC: C23C16/04 ,  C23C16/06 ,  C23C16/18 ,  C23C16/455 ,  C23C16/40 ,  C23C16/02 ,  C23C16/30 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768 ,  C23C16/22

Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

公开(公告)号：US11501966B2

公开(公告)日：2022-11-15

申请号：US17113383

申请日：2020-12-07

Applicant: ASM IP HOLDING B.V.

Inventor： Eva E. Tois ,  Viljami J. Pore

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/3105 ,  C23C16/40

Abstract: Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.