公开(公告)号：US20180010247A1

公开(公告)日：2018-01-11

申请号：US15205827

申请日：2016-07-08

Applicant: ASM IP Holding B.V.

Inventor： Antti Juhani Niskanen ,  Eva Tois ,  Hidemi Suemori ,  Suvi Haukka

IPC: C23C16/455 ,  C23C16/06

CPC classification number: C23C16/45525 ,  C23C16/04 ,  C23C16/06 ,  C23C16/40 ,  C23C16/45553

Abstract: A method for selectively depositing a metal oxide film is disclosed. In particular, the method comprises pulsing a metal or semi-metal precursor onto the substrate and pulsing an organic reactant onto the substrate. A reaction between the metal or semi-metal precursor and the organic reactant selectively forms a metal oxide film on either a dielectric layer or a metal layer.

公开(公告)号：US09816180B2

公开(公告)日：2017-11-14

申请号：US15013637

申请日：2016-02-02

Applicant: ASM IP HOLDING B.V.

Inventor： Suvi P. Haukka ,  Eva Tois

IPC: H01L21/302 ,  C23C16/04 ,  C23C16/40 ,  C23C16/02 ,  C23C16/06 ,  C23C16/455

CPC classification number: C23C16/04 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/402 ,  C23C16/45525

Abstract: Methods are provided for selectively depositing a surface of a substrate relative to a second, different surface. An exemplary deposition method can include selectively depositing a material, such as a material comprising nickel, nickel nitride, cobalt, iron, and/or titanium oxide on a first surface, such as a SiO2 surface, relative to a second, different surface, such as a H-terminated surface, of the same substrate. Methods can include treating a surface of the substrate to provide H-terminations prior to deposition.

公开(公告)号：US20170032956A1

公开(公告)日：2017-02-02

申请号：US14811370

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/28556 ,  C23C16/04 ,  C23C16/45551 ,  C23C16/54 ,  H01L21/0262 ,  H01L21/28562 ,  H01L21/76829 ,  H01L21/76849

Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供了用于沉积薄膜的方法。 在一些实施例中，在多个站中执行薄膜沉积，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。

公开(公告)号：US20170029947A1

公开(公告)日：2017-02-02

申请号：US14811528

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaakko Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/4583 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供用于沉积薄膜的装置。 在一些实施例中，提供多个站，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。

公开(公告)号：US20150299848A1

公开(公告)日：2015-10-22

申请号：US14687833

申请日：2015-04-15

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Raija H. Matero ,  Eva Tois ,  Antti Niskanen ,  Marko Tuominen ,  Hannu Huotari ,  Viljami J. Pore

IPC: C23C16/04 ,  C23C16/06 ,  C23C16/56 ,  C23C16/30 ,  C23C16/455 ,  C23C16/02 ,  C23C16/40

CPC classification number: C23C16/04 ,  C23C16/02 ,  C23C16/06 ,  C23C16/18 ,  C23C16/22 ,  C23C16/30 ,  C23C16/402 ,  C23C16/405 ,  C23C16/407 ,  C23C16/408 ,  C23C16/45525 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76829 ,  H01L21/76849

Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

Abstract translation: 提供了用于将第一材料双重选择性沉积在基底的第一表面上的方法和在相同基底的第二不同表面上的第二材料。 选择性沉积的材料可以是例如金属，金属氧化物或介电材料。

公开(公告)号：US12217954B2

公开(公告)日：2025-02-04

申请号：US17407839

申请日：2021-08-20

Applicant: ASM IP Holding B.V.

Inventor： Shaoren Deng ,  Andrea Illiberi ,  Daniele Chiappe ,  Eva Tois ,  Giuseppe Alessio Verni ,  Michael Givens ,  Varun Sharma ,  Chiyu Zhu ,  Shinya Iwashita ,  Charles Dezelah ,  Viraj Madhiwala ,  Jan Willem Maes ,  Marko Tuominen ,  Anirudhan Chandrasekaran

IPC: H01L21/02 ,  B08B3/08 ,  B08B5/00 ,  C11D7/02 ,  C11D7/24 ,  C11D7/26 ,  C23C16/02 ,  H01L21/285

Abstract: Methods for cleaning a substrate are disclosed. The substrate comprises a dielectric surface and a metal surface. The methods comprise providing a cleaning agent to the reaction chamber.

公开(公告)号：US12148609B2

公开(公告)日：2024-11-19

申请号：US17472981

申请日：2021-09-13

Applicant: ASM IP Holding B.V.

Inventor： Varun Sharma ,  Daniele Chiappe ,  Eva Tois ,  Viraj Madhiwala ,  Marko Tuominen ,  Charles Dezelah ,  Michael Givens ,  Tom Blomberg

IPC: H01L21/02

Abstract: The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

公开(公告)号：US20240312790A1

公开(公告)日：2024-09-19

申请号：US18389847

申请日：2023-12-20

Applicant: ASM IP Holding B.V.

Inventor： Eva Tois ,  Shaoren Deng ,  Daniele Chiappe ,  Viraj Madhiwala ,  Marko Tuominen ,  Vincent Vandalon

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01L21/31111 ,  H01L21/67075 ,  H01L21/67086

Abstract: The current disclosure relates to methods of selectively etching a material. The method includes contacting a substrate having a first surface and a second surface with an etching liquid to selectively etch the first surface relative to the second surface, and the first surface comprises etchable material and the second surface is covered with a polyimide-comprising layer. The disclosure further relates to methods of forming a semiconductor device and to a semiconductor device. Further, the disclosure relates to methods of forming patterned features on a substrate, and to a semiconductor processing system.

公开(公告)号：US20240076775A1

公开(公告)日：2024-03-07

申请号：US18303095

申请日：2023-04-19

Applicant: ASM IP HOLDING B.V.

Inventor： Andrea Illiberi ,  Giuseppe Alessio Verni ,  Shaoren Deng ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Michael Givens

IPC: C23C16/40 ,  B01J31/12 ,  C23C16/455

CPC classification number: C23C16/401 ,  B01J31/122 ,  C23C16/45534 ,  C23C16/45553

Abstract: Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.

公开(公告)号：US11898240B2

公开(公告)日：2024-02-13

申请号：US17216466

申请日：2021-03-29

Applicant: ASM IP Holding B.V.

Inventor： Andrea Illiberi ,  Giuseppe Alessio Verni ,  Shaoren Deng ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Michael Givens

IPC: C23C16/04 ,  B01J21/02 ,  C23C22/82 ,  C23C22/77 ,  C23C16/40

CPC classification number: C23C16/04 ,  B01J21/02 ,  C23C16/402 ,  C23C22/77 ,  C23C22/82

Abstract: Methods for selective deposition of silicon oxide films on dielectric surfaces relative to metal surfaces are provided. A metal surface of a substrate may be selectively passivated relative to the dielectric surface, such as with a polyimide layer or thiol SAM. Silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface by contacting the dielectric surface with a metal catalyst and a silicon precursor comprising a silanol.