公开(公告)号：US20250069883A1

公开(公告)日：2025-02-27

申请号：US18810573

申请日：2024-08-21

Applicant: ASM IP Holding B.V.

Inventor： Vincent Vandalon ,  Marko Tuominen ,  Krzysztof Kamil Kachel ,  YongGyu Han ,  Nadadur Veeraraghavan Srinath ,  Kranthi Kumar Vaidyula ,  Shaoren Deng

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: The disclosure relates to methods of selectively depositing an oxide material layer on a first surface of a semiconductor substrate relative to a second surface of the same substrate, to semiconductor processing assemblies, as well as to oxide material layers, structures and devices comprising an oxide material layer deposited according to the current disclosure. In the method, an oxide material layer is selectively deposited using a first precursor and an oxygen precursor. The second surface may be passivated against deposition of oxide material.

公开(公告)号：US20240222135A1

公开(公告)日：2024-07-04

申请号：US18398598

申请日：2023-12-28

Applicant: ASM IP Holding B.V.

Inventor： Daniele Chiappe ,  Viraj Madhiwala ,  Eva E. Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Vincent Vandalon ,  Anirudhan Chandrasekaran

IPC: H01L21/3205 ,  H01L21/02 ,  H01L21/3213

CPC classification number: H01L21/32051 ,  H01L21/02068 ,  H01L21/02118 ,  H01L21/32135

Abstract: Methods for forming selective passivation layers on a dielectric surface relative to a metallic surface employing a chalcogenide layer are disclosed. Methods for utilizing selective passivation layers for depositing target films as also disclosed. Exemplary structures that include selective passivation layers are further disclosed.

公开(公告)号：US20240213033A1

公开(公告)日：2024-06-27

申请号：US18544516

申请日：2023-12-19

Applicant: ASM IP Holding B.V.

Inventor： YongGyu Han ,  Marko Tuominen ,  Shaoren Deng ,  Vincent Vandalon ,  Kranthi Kumar Vaidyula ,  Nadadur Veeraraghavan Srinath

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/027 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01J37/32899 ,  H01L21/0271 ,  H01L21/31116 ,  H01L21/67069 ,  H01J2237/3341

Abstract: The current disclosure relates to methods and assemblies for selectively etching a material from a first surface of a substrate relative to a second surface of the same substrate. The second surface of the substrate is covered by an organic polymer layer and the first surface is etched by a reactive species generated from NF3-containing plasma. The current disclosure further relates to semiconductor structures and devices formed by using the methods or assemblies of the disclosure.

公开(公告)号：US20250079169A1

公开(公告)日：2025-03-06

申请号：US18815676

申请日：2024-08-26

Applicant: ASM IP Holding B.V.

Inventor： Vincent Vandalon ,  Ren-Jie Chang ,  Giuseppe Alessio Verni ,  Alessandra Leonhardt ,  Michael Givens

IPC: H01L21/02

Abstract: Methods for forming semiconductor structures including 2D-transition metal dichalcogenide layers, methods for forming gate stacks including metallic 2D-transition metal dichalcogenide layer, as well as methods for forming ternary phase 2D-transition metal dichalcogenide layer by an atomic layer deposition process (ALD) are disclosed.

公开(公告)号：US20240425985A1

公开(公告)日：2024-12-26

申请号：US18747162

申请日：2024-06-18

Applicant: ASM IP Holding B.V.

Inventor： Antti Niskanen ,  Vincent Vandalon

IPC: C23C16/455 ,  C23C16/52

Abstract: Methods and related systems, precursor vessels, data processing systems, computer program products, and computer-readable media that can be employed for determining an amount of precursor in a precursor vessel. Embodiments of presently described methods can comprise carrying out an analyzing sequence, by a processor, of at least the pressure as a function of time, thereby quantifying a remaining amount of the precursor.

公开(公告)号：US20240035872A1

公开(公告)日：2024-02-01

申请号：US18359629

申请日：2023-07-26

Applicant: ASM IP Holding, B.V.

Inventor： Vincent Vandalon

IPC: G01F23/263 ,  H01L21/66

CPC classification number: G01F23/263 ,  H01L22/10

Abstract: In the present description, a capacitive sensor system is described by means of which the amount of solid precursor in a precursor vessel for a semiconductor manufacturing process can be determined and to a method for using the same. The system comprises at least two electrodes that are arranged in a substantially parallel manner within the precursor vessel.

公开(公告)号：US20250092509A1

公开(公告)日：2025-03-20

申请号：US18889069

申请日：2024-09-18

Applicant: ASM IP Holding B.V.

Inventor： Bhagyesh Purohit ,  Saima Alli ,  Eva E. Tois ,  Marko Tuominen ,  Charles Dezelah ,  Vincent Vandalon ,  Adam Vianna ,  Krzysztof Kamil Kachel ,  Eric James Shero ,  Yi Cheng Zhang ,  Anirudhan Chandrasekaran

IPC: C23C16/04 ,  C23C16/455 ,  C23C16/56 ,  H01L21/02

Abstract: The disclosure relates to methods and processing assemblies for selectively depositing organic polymer material on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process is disclosed. The method comprises providing a substrate in a reaction chamber, providing a first vapor-phase organic reactant into the reaction chamber and providing a second vapor-phase organic reactant into the reaction chamber. In the method, the first and second vapor-phase organic reactants form the organic polymer material selectively on the first surface; and the first vapor-phase reactant comprises a cyclic compound comprising at least two primary amine groups.

公开(公告)号：US20240312790A1

公开(公告)日：2024-09-19

申请号：US18389847

申请日：2023-12-20

Applicant: ASM IP Holding B.V.

Inventor： Eva Tois ,  Shaoren Deng ,  Daniele Chiappe ,  Viraj Madhiwala ,  Marko Tuominen ,  Vincent Vandalon

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01L21/31111 ,  H01L21/67075 ,  H01L21/67086

Abstract: The current disclosure relates to methods of selectively etching a material. The method includes contacting a substrate having a first surface and a second surface with an etching liquid to selectively etch the first surface relative to the second surface, and the first surface comprises etchable material and the second surface is covered with a polyimide-comprising layer. The disclosure further relates to methods of forming a semiconductor device and to a semiconductor device. Further, the disclosure relates to methods of forming patterned features on a substrate, and to a semiconductor processing system.

公开(公告)号：US20230140367A1

公开(公告)日：2023-05-04

申请号：US18050114

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Viraj Madhiwala ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Michael Givens ,  Andrea llliberi ,  Vincent Vandalon

IPC: C23C16/40 ,  H01J37/32 ,  C23C16/455

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.

公开(公告)号：US12227835B2

公开(公告)日：2025-02-18

申请号：US18050114

申请日：2022-10-27

Applicant: ASM IP Holding, B.V.

Inventor： Viraj Madhiwala ,  Daniele Chiappe ,  Eva Tois ,  Marko Tuominen ,  Charles Dezelah ,  Shaoren Deng ,  Anirudhan Chandrasekaran ,  YongGyu Han ,  Michael Givens ,  Andrea Illiberi ,  Vincent Vandalon

IPC: C23C16/00 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32

Abstract: Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.