公开(公告)号：US20170213701A1

公开(公告)日：2017-07-27

申请号：US15413581

申请日：2017-01-24

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Farzad Houshmand ,  Philip A. Kraus ,  Abhishek Chowdhury ,  John C. Forster ,  Kallol Bera

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01J37/32091 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32577 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67069

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US20160276136A1

公开(公告)日：2016-09-22

申请号：US15168575

申请日：2016-05-31

Applicant: Applied Materials, Inc.

Inventor： John C. Forster ,  Joseph Yudovsky ,  Garry K. Kwong ,  Tai T. Ngo ,  Kevin Griffin ,  Kenneth S. Collins ,  Ren Liu

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32357 ,  H01J37/32513 ,  H01J37/32541 ,  H01J37/32568

Abstract: A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure.

公开(公告)号：US09269562B2

公开(公告)日：2016-02-23

申请号：US13743646

申请日：2013-01-17

Applicant: Applied Materials, Inc.

Inventor： Robert Dinsmore ,  John C. Forster ,  Song-Moon Suh ,  Cheng-Hsiung Tsai ,  Glen T. Mori

IPC: H01L21/3065 ,  H01L21/02 ,  H01L23/00

CPC classification number: H01L21/02063 ,  H01L21/02068 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/1134 ,  H01L2924/00014

Abstract: Embodiments of the present invention generally relate to a method for cleaning a processing chamber during substrate processing. During a first substrate processing step, a plasma is formed from a gas mixture of argon, helium, and hydrogen in the processing chamber. In a second substrate processing step, an argon plasma is formed in the processing chamber.

Abstract translation: 本发明的实施例一般涉及在衬底处理期间清洁处理室的方法。 在第一基板处理步骤期间，在处理室中由氩，氦和氢的气体混合物形成等离子体。 在第二基板处理步骤中，在处理室中形成氩等离子体。

公开(公告)号：US20160024653A1

公开(公告)日：2016-01-28

申请号：US14774381

申请日：2014-03-14

Applicant: John C. FORSTER ,  Joseph YUDOVSKY ,  Applied Materials, Inc.

Inventor： John C. Forster ,  Joseph Yudovsky

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/50

CPC classification number: C23C16/45544 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/50 ,  H01J37/321 ,  Y10S901/50

Abstract: Substrate processing chambers and methods for processing multiple substrates generally including an inductively coupled pie-shaped plasma source positioned so that a substrate rotating on a platen will pass through a plasma region adjacent the plasma source.

Abstract translation: 基板处理室和用于处理多个基板的方法，通常包括感应耦合的饼形等离子体源，其定位成使得在压板上旋转的基板将通过与等离子体源相邻的等离子体区域。