公开(公告)号：US11810810B2

公开(公告)日：2023-11-07

申请号：US18079589

申请日：2022-12-12

Applicant: Applied Materials, Inc.

Inventor： Kaushal Gangakhedkar ,  Kallol Bera ,  Joseph Yudovsky

IPC: H01L21/687 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01L21/68764 ,  H01L21/67017 ,  H01L21/6838 ,  H01L21/6875 ,  H01L21/68735 ,  H01L21/68757 ,  H01L21/68771 ,  H01L21/68785

Abstract: Susceptor assemblies comprising a susceptor base and a plurality of pie-shaped skins thereon are described. A pie anchor can be positioned in the center of the susceptor base to hold the pie-shaped skins in place during processing.

公开(公告)号：US11798825B2

公开(公告)日：2023-10-24

申请号：US16396683

申请日：2019-04-27

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Alexander S. Polyak

IPC: H01L21/67 ,  H01L21/68 ,  H01L21/687 ,  C23C16/458 ,  C23C16/455

CPC classification number: H01L21/6719 ,  C23C16/4584 ,  C23C16/45544 ,  H01L21/67196 ,  H01L21/68 ,  H01L21/68764 ,  H01L21/68792 ,  H01L2221/68309

Abstract: Apparatus and methods of processing a substrate in a carousel processing chamber are described. A wafer pedestal has a support surface with a support shaft extending below the wafer pedestal. A roller pinion wheel is below the wafer support around the support shaft. The roller pinion wheel has a plurality of spokes in contact with the support shaft and a wheel with a plurality of roller pinions spaced around the outer periphery of the wheel. Processing chambers incorporating the wafer pedestal and processing methods using the wafer pedestal for in-situ rotation are also described.

公开(公告)号：US20220064794A1

公开(公告)日：2022-03-03

申请号：US17522869

申请日：2021-11-09

Applicant: Applied Materials, Inc.

Inventor： Colin C. Neikirk ,  Pravin K. Narwankar ,  Kaushal Gangakhedkar ,  Visweswaren Sivaramakrishnan ,  Jonathan Frankel ,  David Masayuki Ishikawa ,  Quoc Truong ,  Joseph Yudovsky

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/442

Abstract: A reactor for coating particles includes one or more motors, a rotary vacuum chamber configured to hold particles to be coated, wherein the rotary vacuum chamber is coupled to the motors, a controller configured to cause the motors to rotate the rotary vacuum chamber about an axial axis of the rotary vacuum chamber such that the particles undergo tumbling agitation, a vacuum port to exhaust gas from the rotary vacuum chamber, a paddle assembly including a rotatable drive shaft extending through the rotary vacuum chamber and coupled to the motors and at least one paddle extending radially from the drive shaft, such that rotation of the drive shaft by the motors orbits the paddle about the drive shaft in a second direction, and a chemical delivery system including a gas outlet on the paddle configured inject process gas into the particles.

公开(公告)号：US20210384063A1

公开(公告)日：2021-12-09

申请号：US17403756

申请日：2021-08-16

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC: H01L21/683 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/687

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

公开(公告)号：US11085129B2

公开(公告)日：2021-08-10

申请号：US16685447

申请日：2019-11-15

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Alexander S. Polyak

IPC: C23C16/44 ,  C30B25/10 ,  H01L21/67 ,  H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/12

Abstract: Susceptor assemblies comprising a susceptor with a top surface with a plurality of recesses and a bottom surface are described. A heater is positioned below the susceptor to heat the susceptor. A shield is positioned between the bottom surface of the susceptor and the heater. The shield increases deposition uniformity across the susceptor.

公开(公告)号：US11043386B2

公开(公告)日：2021-06-22

申请号：US15959972

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Jared Ahmad Lee ,  Kevin Griffin ,  Srinivas Gandikota ,  Joseph Yudovsky ,  Mandyam Sriram

IPC: H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/455 ,  H01L21/28 ,  C23C16/14 ,  C23C16/452 ,  C23C16/458 ,  H01L21/768

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

公开(公告)号：US10273578B2

公开(公告)日：2019-04-30

申请号：US14506317

申请日：2014-10-03

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Robert T. Trujillo ,  Kevin Griffin ,  Garry K. Kwong ,  Kallol Bera ,  Li-Qun Xia ,  Mandyam Sriram

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/458

Abstract: A heating module for use in a substrate processing chamber. The heating module having a housing with a heat source therein. The heating module can be part of a gas distribution assembly positioned above a susceptor assembly to heat the top surface of the susceptor and wafers directly. The heating module can have constant or variable power output. Processing chambers and methods of processing a wafer using the heating module are described.

公开(公告)号：US10197385B2

公开(公告)日：2019-02-05

申请号：US15608361

申请日：2017-05-30

Applicant: Applied Materials, Inc.

Inventor： Somesh Khandelwal ,  Garry K. Kwong ,  Kevin Griffin ,  Joseph Yudovsky

IPC: G01D5/34 ,  C23C16/52 ,  G01B11/14 ,  H01L21/67 ,  H01L21/68 ,  C23C16/455 ,  H01L21/687

Abstract: Apparatus and methods for measuring the proximity between two components using a hardstop, an actuator and an emitter/detector passing light through a passage in the actuator are disclosed. The passage provides attenuation to the light which changes as the gap between the components changes allowing the measurement and control of the gap. Methods of determining the topology of the components using the apparatus are also described.

公开(公告)号：US20180240676A1

公开(公告)日：2018-08-23

申请号：US15959972

申请日：2018-04-23

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  Yihong Chen ,  Jared Ahmad Lee ,  Kevin Griffin ,  Srinivas Gandikota ,  Joseph Yudovsky ,  Mandyam Sriram

IPC: H01L21/285 ,  H01L21/3205 ,  C23C16/06 ,  C23C16/455 ,  H01L21/768 ,  H01L21/28 ,  C23C16/14

CPC classification number: H01L21/28562 ,  C23C16/06 ,  C23C16/14 ,  C23C16/452 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/4584 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/76877

Abstract: Methods of depositing a film by atomic layer deposition are described. The methods comprise exposing a substrate surface to a first process condition comprising a first reactive gas and a second reactive gas and exposing the substrate surface to a second process condition comprising the second reactive gas. The first process condition comprises less than a full amount of the second reactive gas for a CVD process.

公开(公告)号：US20180155834A1

公开(公告)日：2018-06-07

申请号：US15827498

申请日：2017-11-30

Applicant: Applied Materials, Inc.

Inventor： Mukund Srinivasan ,  Hari Ponnekanti ,  Joseph Yudovsky ,  Alexander S. Polyak

IPC: C23C16/455 ,  H01L21/285 ,  H01L21/67 ,  H01L21/02

CPC classification number: C23C16/45544 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/4583 ,  C23C16/54 ,  H01L21/02005 ,  H01L21/28562 ,  H01L21/67098 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/68764 ,  H01L21/68771

Abstract: Processing platforms having a central transfer station with a robot, a first batch processing chamber connected to a first side of the central transfer station and a first single wafer processing chamber connected to a second side of the central transfer station, where the first batch processing chamber configured to process x wafers at a time for a batch time and the first single wafer processing chamber configured to process a wafer for about 1/x of the batch time. Methods of using the processing platforms and processing a plurality of wafers are also described.