公开(公告)号：US20200030766A1

公开(公告)日：2020-01-30

申请号：US16523252

申请日：2019-07-26

Applicant: Applied Materials, Inc.

Inventor： Jared Ahmad Lee ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Dhritiman Subha Kashyap ,  Michael Rice

IPC: B01J8/18 ,  H01J37/32

Abstract: Apparatus and methods for providing high velocity gas flow showerheads for deposition chambers are described. The showerhead has a faceplate in contact with a backing plate that has a concave portion to provide a plenum between the backing plate and the faceplate. A plurality of thermal elements is within the concave portion of the backing plate and extends to contact the faceplate.

公开(公告)号：US10483282B2

公开(公告)日：2019-11-19

申请号：US16267151

申请日：2019-02-04

Applicant: Applied Materials, Inc.

Inventor： Michael Wenyoung Tsiang ,  Praket P. Jha ,  Xinhai Han ,  Bok Hoen Kim ,  Sang Hyuk Kim ,  Myung Hun Ju ,  Hyung Jin Park ,  Ryeun Kwan Kim ,  Jin Chul Son ,  Saiprasanna Gnanavelu ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Majid K. Shahreza ,  Jason K. Foster

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/505 ,  C23C16/52 ,  C23C16/40 ,  H01L27/11582 ,  H01L29/06 ,  H01L21/3115 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11548 ,  H01L21/768 ,  C23C16/455 ,  H01L21/311 ,  H01L21/3105

Abstract: Embodiments of the present disclosure generally relate to an improved method for forming a dielectric film stack used for inter-level dielectric (ILD) layers in a 3D NAND structure. In one embodiment, the method comprises providing a substrate having a gate stack deposited thereon, forming on exposed surfaces of the gate stack a first oxide layer using a first RF power and a first process gas comprising a TEOS gas and a first oxygen-containing gas, and forming over the first oxide layer a second oxide layer using a second RF power and a second process gas comprising a silane gas and a second oxygen-containing gas.

公开(公告)号：US10480068B2

公开(公告)日：2019-11-19

申请号：US15434853

申请日：2017-02-16

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Ren-Guan Duan ,  Kalyanjit Ghosh

IPC: C23C16/00 ,  C23C16/44 ,  C23C16/455

Abstract: Embodiments disclosed herein generally relate to a chamber liner for the high temperature processing of substrates in a processing chamber. The processing chamber utilizes an inert bottom purge flow to shield the substrate support from halogen reactants such that the substrate support may be heated to temperatures greater than about 650 degrees Celsius. The chamber liner controls a flow profile such that during deposition the bottom purge flow restricts reactants and by-products from depositing below the substrate support. During a clean process, the bottom purge flow restricts halogen reactants from contacting the substrate support. As such, the chamber liner includes a conical inner surface angled inwardly to direct purge gases around an edge of the substrate support and to reduce deposition under the substrate support and the on the edge.

公开(公告)号：US20190206706A1

公开(公告)日：2019-07-04

申请号：US16216526

申请日：2018-12-11

Applicant: Applied Materials, Inc.

Inventor： Dale R. Du Bois ,  Bozhi Yang ,  Jianhua Zhou ,  Sanjeev Baluja ,  Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67248 ,  G01K1/08 ,  G01K1/14 ,  G01K7/02 ,  G01K7/16 ,  G01K13/00 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/68792

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate support, at various locations. One embodiment of the present disclosure provides a sensor column for measuring one or more parameters in a processing chamber. The sensor column includes a tip for contacting a chamber component being measured, a protective tube having an inner volume extending from a first end and second end, wherein the tip is attached to the first end of the protective tube and seals the protective tube at the first end, and a sensor disposed near the tip. The inner volume of the protective tube houses connectors of the sensor, and the tip is positioned in the processing chamber through an opening of the processing chamber during operation.

公开(公告)号：US20190131167A1

公开(公告)日：2019-05-02

申请号：US16171785

申请日：2018-10-26

Applicant: Applied Materials, Inc.

Inventor： Michael Rice ,  Joseph AuBuchon ,  Sanjeev Baluja ,  Mandyam Sriram

IPC: H01L21/687 ,  C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/683 ,  H01L21/67

Abstract: Apparatus and methods to process one or more wafers are described. A plurality of process stations are arranged in a circular configuration around a rotational axis. A support assembly with a rotatable center base defining a rotational axis, at least two support arms extending from the center base and heaters on each of the support arms is positioned adjacent the processing stations so that the heaters can be moved amongst the various process stations to perform one or more process condition.

公开(公告)号：US10153185B2

公开(公告)日：2018-12-11

申请号：US14761214

申请日：2014-02-07

Applicant: Applied Materials, Inc.

Inventor： Dale R. Du Bois ,  Bozhi Yang ,  Jianhua Zhou ,  Sanjeev Baluja ,  Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez

IPC: G01K1/14 ,  H01L21/67 ,  H01L21/687 ,  G01K1/08 ,  G01K7/02 ,  G01K7/16 ,  G01K13/00

Abstract: Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate support, at various locations. One embodiment of the present disclosure provides a sensor column for measuring one or more parameters in a processing chamber. The sensor column includes a tip for contacting a chamber component being measured, a protective tube having an inner volume extending from a first end and second end, wherein the tip is attached to the first end of the protective tube and seals the protective tube at the first end, and a sensor disposed near the tip. The inner volume of the protective tube houses connectors of the sensor, and the tip is positioned in the processing chamber through an opening of the processing chamber during operation.

公开(公告)号：US09364871B2

公开(公告)日：2016-06-14

申请号：US13970176

申请日：2013-08-19

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Alexandros T. Demos ,  Kelvin Chan ,  Juan Carlos Rocha-Alvarez ,  Scott A. Hendrickson ,  Abhijit Kangude ,  Inna Turevsky ,  Mahendra Chhabra ,  Thomas Nowak ,  Daping Yao ,  Bo Xie ,  Daemian Raj

IPC: C23C16/455 ,  B08B7/00 ,  C11D11/00 ,  C23C16/44 ,  C23C16/48

CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

公开(公告)号：US20250166973A1

公开(公告)日：2025-05-22

申请号：US18813855

申请日：2024-08-23

Applicant: Applied Materials, Inc.

Inventor： Rohit Ode ,  Sanjeev Baluja ,  Kenneth Brian Doering ,  Kevin Griffin ,  Hanhong Chen

IPC: H01J37/32

Abstract: Plasma showerhead assemblies are disclosed comprising a conductive plate having a plurality of the conductive plate gas openings, a dielectric faceplate having a thickness and a plurality of dielectric faceplate gas openings extending through the dielectric faceplate thickness in fluid communication with the plurality of the conductive plate gas openings. A plurality of tri-lobed o-rings surrounding the conductive plate gas openings and the dielectric faceplate gas openings are configured to form a seal between the dielectric faceplate gas openings and the conductive plate gas openings from atmospheric pressure.

公开(公告)号：US20250054804A1

公开(公告)日：2025-02-13

申请号：US18929955

申请日：2024-10-29

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Tejas Ulavi ,  Eric J. Hoffmann ,  Ashutosh Agarwal

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458

Abstract: Apparatus and methods for loading and unloading substrates from a spatial processing chamber are described. A support assembly has a rotatable center base and support arms extending therefrom. A support shaft is at the outer end of the support arms and a substrate support is on the support shaft. Primary lift pins are positioned within openings in the substrate support. Secondary lift pins are positioned within openings in the support arms and are aligned with the primary lift pins. An actuation plate within the processing volume causes, upon movement of the support assembly, the primary lift pins to elevate through contact with the secondary lift pins.

公开(公告)号：US12224195B2

公开(公告)日：2025-02-11

申请号：US17879074

申请日：2022-08-02

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Sanjeev Baluja

IPC: H01L21/68 ,  B25B11/00 ,  H01L21/683

Abstract: Processing chambers, substrate supports, centering wafers and methods of center calibrating wafer hand-off are described. A centering wafer comprises a disc-shaped body having a top surface and a bottom surface defining a thickness, a center, an outer edge having an outer peripheral face, a first arc-shaped slit and a second arc-shaped slit. Embodiments of the disclosure advantageously provide the ability to use the centering wafer to monitor and control backside pressure and thereby determine the center of a substrate support prior to processing the centering wafer. The centering wafer may be centered at a plurality of different angles by rotating the centering wafer.