公开(公告)号：US10236411B2

公开(公告)日：2019-03-19

申请号：US15335078

申请日：2016-10-26

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Wen-Luh Liao ,  Shou-Lung Chen ,  Chien-Fu Huang

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/08 ,  H01L27/15 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62

Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.

公开(公告)号：US10038128B2

公开(公告)日：2018-07-31

申请号：US15702286

申请日：2017-09-12

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Yao-Ning Chan ,  Tzu Chieh Hsu ,  Yi-ming Chen ,  Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chia-liang Hsu ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/62 ,  H01L25/16 ,  H01L33/38

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.

公开(公告)号：US10008636B2

公开(公告)日：2018-06-26

申请号：US15796241

申请日：2017-10-27

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang Lu ,  Yi-Chieh Lin ,  Rong-Ren Lee ,  Yu-Ren Peng ,  Ming-Siang Huang ,  Ming-Ta Chin ,  Yi-Ching Lee

IPC: H01L33/46 ,  H01L33/60 ,  H01L25/075

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/04 ,  H01L33/10 ,  H01L33/60

Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength λ nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.

公开(公告)号：US20170309774A1

公开(公告)日：2017-10-26

申请号：US15643807

申请日：2017-07-07

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Ching-Huai Ni ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Ching-Pei Lin

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/62 ,  H01L33/38 ,  H01L21/00 ,  H01L33/22 ,  H01L33/46

CPC classification number: H01L33/0025 ,  H01L21/00 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

公开(公告)号：US09793458B2

公开(公告)日：2017-10-17

申请号：US15438430

申请日：2017-02-21

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu Huang ,  Yao-Ning Chan ,  Tzu Chieh Hsu ,  Yi Ming Chen ,  Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Chun-Hsien Chang

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/38 ,  H01L25/16

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/38 ,  H01L33/385 ,  H01L33/48 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

公开(公告)号：US09647177B2

公开(公告)日：2017-05-09

申请号：US15079812

申请日：2016-03-24

Applicant: Epistar Corporation

Inventor： Chiu-Lin Yao ,  Chih-Chiang Lu

IPC: H01L33/10 ,  H01L33/46 ,  H01L33/00 ,  H01L25/075 ,  H01L33/64 ,  H01L33/44 ,  H01L33/62

CPC classification number: H01L27/15 ,  H01L25/075 ,  H01L25/0753 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/6609 ,  H01L29/66969 ,  H01L29/861 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2933/0075 ,  H01L2924/00

Abstract: The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; an insulative protection layer on the heat dispersion substrate, wherein the insulative protection layer comprises AlInGaN series material; and an optoelectronic unit comprising an epitaxial structure comprising multiple layers on the insulative protection layer, wherein at least one layer of the epitaxial structure comprises III-V group material devoid of nitride.

公开(公告)号：US20160336482A1

公开(公告)日：2016-11-17

申请号：US14709985

申请日：2015-05-12

Applicant: EPISTAR CORPORATION

Inventor： Shao-Ping Lu ,  Cheng-Feng Yu ,  Wen-Luh Liao ,  Hsin-Chan Chung ,  Shih-Chang Lee ,  Chih-Chiang Lu

IPC: H01L33/08 ,  H01L33/10 ,  H01L33/22

CPC classification number: H01L25/0756 ,  H01L33/10 ,  H01L33/22 ,  H01L33/38

Abstract: An object of the present invention is to provide a light-emitting device comprising: a substrate, a first light-emitting semiconductor stack having a first transverse width, the first light-emitting semiconductor stack comprising a first active layer emitting a first radiation of a first dominant wavelength during operation; a second light-emitting semiconductor stack having a second transverse width less than the first transverse width and comprising a second active layer emitting a second radiation of a second dominant wavelength shorter than the first dominant wavelength during operation; and a first conductive connecting structure between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack, wherein the first conductive connecting structure is lattice-mismatched to the first active layer and to the second active layer, the first light-emitting semiconductor stack is between the substrate and the second light-emitting semiconductor stack.

Abstract translation: 本发明的目的是提供一种发光器件，其包括：衬底，具有第一横向宽度的第一发光半导体堆叠，所述第一发光半导体堆叠包括发射第一辐射的第一有源层， 运行中第一主波长; 第二发光半导体堆叠，其具有小于第一横向宽度的第二横向宽度，并且包括在操作期间发射比第一主波长短的第二主波长的第二辐射的第二有源层; 以及在第一发光半导体堆叠和第二发光半导体堆叠之间的第一导电连接结构，其中第一导电连接结构与第一有源层和第二有源层晶格失配，第一发光 半导体堆叠在基板和第二发光半导体堆叠之间。

公开(公告)号：US20160204305A1

公开(公告)日：2016-07-14

申请号：US14442319

申请日：2013-07-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Chih-Chiang Lu ,  Chun-Yu Lin ,  Ching-Huai Ni ,  Yi-Ming Chen ,  Tzu-Chieh Hsu ,  Ching-Pei Lin

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/62 ,  H01L33/46

CPC classification number: H01L33/0025 ,  H01L21/00 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a semiconductor light-emitting device, comprises the steps of providing a first substrate; providing multiple epitaxial units on the first substrate, wherein the plurality of epitaxial units comprises: multiple first epitaxial units, wherein each of the first epitaxial units has a first geometric shape and a first area; and multiple second epitaxial units, wherein each of the second epitaxial units has a second geometric shape and a second area; providing a second substrate with a surface; transferring the multiple second epitaxial units to the surface of the second substrate; and dividing the first substrate to form multiple first semiconductor light-emitting devices, wherein each of the first semiconductor light-emitting devices has the first epitaxial unit; wherein the first geometric shape is different from the second geometric shape, or the first area is different from the second area.

Abstract translation: 一种制造半导体发光器件的方法，包括以下步骤：提供第一衬底; 在所述第一衬底上提供多个外延单元，​​其中所述多个外延单元包括：多个第一外延单元，​​其中所述第一外延单元中的每一个具有第一几何形状和第一区域; 和多个第二外延单元，​​其中每个第二外延单元具有第二几何形状和第二区域; 提供具有表面的第二基底; 将所述多个第二外延单元转移到所述第二基板的表面; 并且分割所述第一基板以形成多个第一半导体发光器件，其中所述第一半导体发光器件中的每一个具有所述第一外延单元; 其中所述第一几何形状与所述第二几何形状不同，或者所述第一区域不同于所述第二区域。

公开(公告)号：US20160005941A1

公开(公告)日：2016-01-07

申请号：US14853511

申请日：2015-09-14

Applicant: Epistar Corporation

Inventor： Min-Yen Tsai ,  Chao-Hsing Chen ,  Tsung-Hsun Chiang ,  Wen-Hung Chuang ,  Bo-Jiun Hu ,  Tzu-Yao Tseng ,  Jia-Kuen Wang ,  Kuan-Yi Lee ,  Yi-Ming Chen ,  Chun-Yu Lin ,  Tsung-Hsien Yang ,  Tzu-Chieh Hsu ,  Kun-De Lin ,  Yao-Ning Chan ,  Chih-Chiang Lu

IPC: H01L33/62 ,  H01L33/60

CPC classification number: H01L33/382 ,  H01L33/0012 ,  H01L33/22 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.

Abstract translation: 半导体发光器件包括半导体堆叠，其包括第一半导体层，第二半导体层和在第一半导体层和第二半导体层之间的有源层，其中第一半导体层包括围绕有源层的外围表面; 穿过所述半导体堆叠以暴露所述第一半导体层的多个通孔; 以及形成在所述多个通路上并且覆盖所述第一半导体层的外围表面的图案化金属层。

公开(公告)号：US09024451B2

公开(公告)日：2015-05-05

申请号：US14466284

申请日：2014-08-22

Applicant: Epistar Corporation

Inventor： Hsin-Mao Liu ,  Min-Hsun Hsieh ,  Tzer-Perng Chen ,  Meng-Yuan Hong ,  Cheng Nan Han ,  Tsung-Xian Lee ,  Ta-Cheng Hsu ,  Chih-Chiang Lu

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L33/62 ,  H01L25/16 ,  H01L27/15

CPC classification number: H01L33/62 ,  H01L25/167 ,  H01L27/153 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.

Abstract translation: 集成照明装置包括：第一控制装置，包括半导体衬底，形成在半导体衬底的第一部分上方的集成电路块;以及形成在集成电路块之上的多个电源焊盘; 形成在所述半导体衬底的第二部分上方的第一发光器件; 以及穿过所述半导体基板的贯穿插头，用于电连接所述第一控制装置和所述第一发光装置。