Abstract:
A light beam measurement device includes: a polarization measurement unit including a first measurement beam splitter provided on an optical path of a laser beam and configured to measure a polarization state of the laser beam having been partially reflected by the first measurement beam splitter; a beam profile measurement unit including a second measurement beam splitter provided on the optical path of the laser beam and configured to measure a beam profile of the laser beam having been partially reflected by the second measurement beam splitter; and a laser beam-directional stability measurement unit configured to measure a stability in a traveling direction of the laser beam, while the first measurement beam splitter and the second measurement beam splitter are made of a material containing CaF2.
Abstract:
The laser system may include first and second laser apparatuses and a beam delivery device. The first laser apparatus may be provided so as to emit a first laser beam to the beam delivery device in a first direction. The second laser apparatus may be provided so as to emit a second laser beam to the beam delivery device in a direction substantially parallel to the first direction. The beam delivery device may be configured to bundle the first and second laser beams and to emit the first and second laser beams from the beam delivery device to a beam delivery direction different from the first direction.
Abstract:
Problem: to suppress the number of times complete gas replacement in a laser chamber.Solution: this excimer laser apparatus may include a gas supply unit, connected to a first receptacle that holds a first laser gas containing halogen gas and a second receptacle that holds a second laser gas having a lower halogen gas concentration than the first laser gas, that supplies the first laser gas and the second laser gas to the interior of the laser chamber. Then, gas pressure control in which the gas supply unit supplies the second laser gas to the interior of the laser chamber or a gas exhaust unit partially exhausts gas from within the laser chamber, and partial gas replacement control in which the gas supply unit supplies the first laser gas and the second laser gas to the interior of the laser chamber and the gas exhaust unit partially exhausts gas from within the laser chamber sequentially, may be selectively performed.
Abstract:
An exposure apparatus may include a laser light source capable of varying a wavelength of a laser beam that is emitted from the laser light source, a mask on which a pattern is formed, the pattern being configured to generate diffracted light by being irradiated with the laser beam, and a controller configured to control, in accordance with a distance between the mask and a substrate, the wavelength of the laser beam that is emitted from the laser light source, wherein the mask is irradiated with the laser beam emitted from the laser light source to perform proximity exposure on a surface of the substrate.
Abstract:
There is provided a method of controlling the wavelength of a laser beam. The method includes measuring an absolute wavelength of the laser beam; calculating a difference between a reference wavelength and the absolute wavelength of the laser beam; and adjusting the reference wavelength of the laser beam based on the difference between the reference wavelength and the absolute wavelength of the laser beam, at an interval shorter than an interval for which the absolute wavelength of the laser beam is measured.
Abstract:
There is provided a laser unit that may include a master oscillator, a laser amplifier, and an adjuster. The master oscillator may be configured to output a laser light beam. The laser amplifier may be disposed in a light path of the laser light beam outputted from the master oscillator. The adjuster may be disposed in the light path of the laser light beam, and may be configured to adjust a beam cross-sectional shape of the laser light beam amplified by the laser amplifier to be a substantially circular shape. The beam cross-sectional shape may be at a beam waist of the laser light beam or in the vicinity of the beam waist of the laser light beam, and may be in a plane orthogonal to a light path axis.
Abstract:
There is provided an extreme ultraviolet light generating system. The extreme ultraviolet light generating system may include: a laser apparatus configured to provide pulsed laser light inside a chamber in which EUV light is generated; an optical shutter disposed on an optical path of the pulsed laser light; and a controller configured to open or close the optical shutter, based on a generation signal supplied from an external unit, the generation signal instructing generation of the EUV light.
Abstract:
An amplifier may include a plurality of discharge tubes arranged in a designed path of a seed laser beam and an optical system arranged to steer the seed laser beam to travel along the designed path.
Abstract:
A method of controlling a laser apparatus may include: exchanging a gain medium in a chamber configured to output a laser beam by exciting the gain medium; first measuring, after the exchanging, pulse energy of a laser beam which is oscillated in the chamber under a specific gas pressure and a specific charge voltage; calculating an approximate expression indicating a relationship between the pulse energy of the laser beam and the gas pressure in the chamber and the charge voltage, or a table representing a correlationship between the pulse energy, the gas pressure and the charge voltage, based on the specific pressure, the specific charge voltage and the pulse energy in the first measuring; storing the approximate expression or the table; second measuring, after the first measuring, pulse energy Er of a laser beam oscillated in the chamber; calculating pulse energy Eec which is supposed to be obtained directly after the exchanging under the gas pressure and the charge voltage in the second measuring based on the approximate expression or the table; calculating a reduction amount ΔEd of pulse energy based on the pulse energy Eec and the pulse energy Er using ΔEd=Eec−Er; and calculating a partial gas exchange amount Q for partial gas exchange in the chamber based on the reduction amount ΔEd of pulse energy.
Abstract:
An EUV light source apparatus by which detachment of a chamber or a part of the chamber, movement to a maintenance area, and highly accurate placement relative to projection optics can be performed easily for maintenance of the EUV light source apparatus. The EUV light source apparatus is an apparatus for generating plasma by applying a laser beam to a target material within a chamber and entering EUV light radiated from the plasma into projection optics of exposure equipment, and includes a positioning mechanism for positioning the chamber or a maintenance unit of the chamber in a predetermined location where an optical axis of the collected extreme ultraviolet light and an optical axis of the projection optics of the exposure equipment are aligned, and a movement mechanism for moving the chamber or the maintenance unit of the chamber between the predetermined location and a maintenance area.