DIGITAL CLAMP FOR STATE RETENTION
    41.
    发明申请
    DIGITAL CLAMP FOR STATE RETENTION 审中-公开
    用于国家保留的数字钳

    公开(公告)号:US20170041001A1

    公开(公告)日:2017-02-09

    申请号:US15331280

    申请日:2016-10-21

    Abstract: Described is an apparatus which comprises: a clamp coupled between a first power supply and a second power supply, the clamp including a plurality of transistors, a circuit to operate with the second power supply; and a control unit to turn on and off the plurality of transistors to adjust the second power supply when the apparatus enters a low power mode. The control unit includes a first comparator to compare the second power supply with a first reference, a second comparator to compare the second power supply with a second reference, and a counter. The counter counts up when the second power supply is higher than the first reference and counts down when the second power supply is lower than the second reference.

    Abstract translation: 描述了一种装置,其包括:夹紧器,其耦合在第一电源和第二电源之间,所述夹具包括多个晶体管,用于与所述第二电源一起操作的电路; 以及控制单元,用于在所述设备进入低功率模式时接通和断开所述多个晶体管以调节所述第二电源。 控制单元包括用于将第二电源与第一参考值进行比较的第一比较器,将第二电源与第二参考电压进行比较的第二比较器和计数器。 当第二电源高于第一个参考电压时,计数器递增计数,当第二个电源低于第二个参考电压时,计数器递减计数。

    Write operations in spin transfer torque memory
    42.
    发明授权
    Write operations in spin transfer torque memory 有权
    在旋转转矩记忆中进行写操作

    公开(公告)号:US09299412B2

    公开(公告)日:2016-03-29

    申请号:US14191191

    申请日:2014-02-26

    CPC classification number: G11C11/1675 G11C7/1009 G11C11/1657

    Abstract: In one embodiment, a controller comprises logic to identify a first plurality of cells in a row of spin transfer torque (STT) memory which are to be set to a parallel state and a second plurality of cells in the row of the STT memory which are to be set to an anti-parallel state, mask write operations to the second plurality of cells in the row, set the first plurality of cells to a parallel state, mask write operations to the first plurality of cells in the row, and set the second plurality of cells to an anti-parallel state.

    Abstract translation: 在一个实施例中,控制器包括用于识别要被设置为并行状态的一行自旋转移转矩(STT)存储器中的第一个多个单元的逻辑,以及STT存储器的行中的第二多个单元 被设置为反并行状态,对行中的第二多个单元进行掩模写入操作,将第一多个单元设置为并行状态,对该行中的第一多个单元进行掩码写入操作,并将 第二多个单元格到反并行状态。

    WRITE OPERATIONS IN SPIN TRANSFER TORQUE MEMORY
    43.
    发明申请
    WRITE OPERATIONS IN SPIN TRANSFER TORQUE MEMORY 有权
    旋转转矩记忆中的写操作

    公开(公告)号:US20150243335A1

    公开(公告)日:2015-08-27

    申请号:US14191191

    申请日:2014-02-26

    CPC classification number: G11C11/1675 G11C7/1009 G11C11/1657

    Abstract: In one embodiment, a controller comprises logic to identify a first plurality of cells in a row of spin transfer torque (STT) memory which are to be set to a parallel state and a second plurality of cells in the row of the STT memory which are to be set to an anti-parallel state, mask write operations to the second plurality of cells in the row, set the first plurality of cells to a parallel state, mask write operations to the first plurality of cells in the row, and set the second plurality of cells to an anti-parallel state.

    Abstract translation: 在一个实施例中,控制器包括用于识别要被设置为并行状态的一行自旋转移转矩(STT)存储器中的第一个多个单元的逻辑,以及STT存储器的行中的第二多个单元 被设置为反并行状态,对行中的第二多个单元进行掩模写入操作,将第一多个单元设置为并行状态,对该行中的第一多个单元进行掩码写入操作,并将 第二多个单元格到反并行状态。

    MULTI-PORTED REGISTER FILE WITH CFETS
    45.
    发明公开

    公开(公告)号:US20240053987A1

    公开(公告)日:2024-02-15

    申请号:US17887154

    申请日:2022-08-12

    CPC classification number: G06F9/30141 G06F9/3012

    Abstract: An apparatus, system, and method for register file circuits are provided. A register file circuit can include a first write bit line (WBL), a first P-channel metal oxide semiconductor (PMOS) transistor including a source coupled to the WBL, a first inverter including an input coupled to a drain of the first PMOS transistor, a second PMOS transistor including a source coupled to an output of the first inverter, and a second WBL (WBLB) coupled to a drain of the second PMOS transistor. 1R1W register file and 2R1W register file designs are provided.

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