METHOD OF THINNING A WAFER TO PROVIDE A RAISED PERIPHERAL EDGE
    42.
    发明申请
    METHOD OF THINNING A WAFER TO PROVIDE A RAISED PERIPHERAL EDGE 有权
    改善波浪提供增加的外围边缘的方法

    公开(公告)号:US20150325562A1

    公开(公告)日:2015-11-12

    申请号:US14806993

    申请日:2015-07-23

    Abstract: A first area of a first surface of an encapsulated component can be thinned, the component including: a semiconductor chip having an active surface opposite the first surface, and an encapsulant extending outwardly from edges of the semiconductor chip. An entire area of the active surface may be aligned with the first area. After the abrading, a second area of the encapsulated component beyond the first area may have a thickness greater than a thickness of the first area. The second area can be configured to fully support the abraded encapsulated component in a state of the encapsulated component being manipulated by handling equipment.

    Abstract translation: 封装部件的第一表面的第一区域可以变薄,所述部件包括:具有与第一表面相对的有效表面的半导体芯片以及从半导体芯片的边缘向外延伸的密封剂。 有源表面的整个区域可以与第一区域对齐。 在研磨之后,超过第一区域的包封组分的第二区域可以具有大于第一区域的厚度的厚度。 第二区域可以被配置为在被处理设备操纵的封装部件的状态下完全支撑磨损的封装部件。

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