公开(公告)号：US20240057413A1

公开(公告)日：2024-02-15

申请号：US18230171

申请日：2023-08-04

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU

IPC: H10K59/131 ,  H10K59/121

CPC classification number: H10K59/131 ,  H10K59/1213

Abstract: A display device includes a display panel including a display portion having a plurality of pixels; and a sensor element disposed on a rear side of the display portion. The display portion has a first region overlapping the sensor element and a second region other than the first region in a plan view. Each of the plurality of pixels has a semiconductor device including a channel portion and a conductive portion made of an oxide semiconductor having a polycrystalline structure. Each of the plurality of pixels in the first region is connected by a first signal line comprising the same layer as the conductive portion, and each of the plurality of pixels in the second region is connected by a second signal line comprising a metal layer connected to the conductive portion.

公开(公告)号：US20230317834A1

公开(公告)日：2023-10-05

申请号：US18127679

申请日：2023-03-29

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Masashi TSUBUKU ,  Toshinari SASAKI ,  Takaya TAMARU

IPC: H01L29/786 ,  H01L21/385 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L21/385 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/7832

Abstract: A method for manufacturing semiconductor device according to an embodiment includes: forming a first metal oxide layer containing aluminum as a main component above a substrate; forming an oxide semiconductor layer above the first metal oxide layer; forming a gate insulating layer above the oxide semiconductor layer; forming a second metal oxide layer containing aluminum as a main component above the gate insulating layer; performing a heat treatment in a state where the second metal oxide layer is formed above the gate insulating layer; removing the second metal oxide layer after the heat treatment; and forming a gate electrode above the gate insulating layer.

公开(公告)号：US20220310713A1

公开(公告)日：2022-09-29

申请号：US17699250

申请日：2022-03-21

Applicant: Japan Display Inc.

Inventor： Hayata AOKI ,  Masashi TSUBUKU ,  Toshinari SASAKI

IPC: H01L27/32 ,  H01L51/52

Abstract: According to one embodiment, a display device includes a first area including a pixel and a second area different from the first area, wherein the pixel includes a pixel electrode, an organic material layer including a light-emitting layer, a first common electrode, and a second common electrode having transmittance higher than that of the first insulating layer, the second area is an area not overlapping the light-emitting layer in plan view, the second area is a transparent area, and the second area does not comprise the first common electrode provided therein.

公开(公告)号：US20220190164A1

公开(公告)日：2022-06-16

申请号：US17549882

申请日：2021-12-14

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Kentaro MIURA ,  Toshinari SASAKI ,  Takeshi SAKAI ,  Akihiro HANADA ,  Masashi TSUBUKU

IPC: H01L29/786 ,  H01L29/423

Abstract: According to one embodiment, a semiconductor device includes an oxide semiconductor. The oxide semiconductor includes a first edge portion and a second edge portion intersecting a gate electrode, a first area overlapping the gate electrode, a second area along the first edge portion, a third area along the second edge portion, a fourth area the first edge portion, a fifth area along the second edge portion, a sixth area surrounded by the first area, the second area and the third area, and a seventh area surrounded by the first area, the fourth area and the fifth area. The first area, the second area and the third area, the fourth area and the fifth area have a higher resistivity than those of the sixth area and the seventh area.

公开(公告)号：US20210013235A1

公开(公告)日：2021-01-14

申请号：US17031999

申请日：2020-09-25

Applicant: Japan Display Inc.

Inventor： Tatsuya TODA ,  Toshinari SASAKI ,  Masayoshi FUCHI

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/1362 ,  G09G3/3266 ,  G09G3/3225

Abstract: A semiconductor device including: a first gate electrode; a first gate insulating layer on the first gate electrode; a first oxide semiconductor layer on the first insulating layer; source and drain electrodes connected to the first oxide semiconductor layer; a second gate insulating layer on the first oxide semiconductor layer; a second oxide semiconductor layer on the second gate insulating layer; a second gate electrode on the second oxide semiconductor layer, the second gate electrode being in contact with the second oxide semiconductor layer; a first insulating layer on the second gate electrode, the first insulating layer having a part of a first aperture overlapping with the second oxide semiconductor layer in a planar view; and a first connecting electrode electrically connecting the first gate electrode and the second gate electrode via the first aperture.

公开(公告)号：US20200243506A1

公开(公告)日：2020-07-30

申请号：US16845289

申请日：2020-04-10

Applicant: Japan Display Inc.

Inventor： Toshinari SASAKI

IPC: H01L27/02 ,  G09G3/20

Abstract: A diode having a simple structure and a simple manufacturing method of the diode are provided. A diode including: a semiconductor layer having a first region and a second region having a resistance lower than a resistance of the first region; a first insulating layer having a first aperture portion and a second aperture portion and covering the semiconductor layer other than the first aperture and the second aperture, the first aperture portion exposing the semiconductor layer in the first region, the second aperture portion exposing the semiconductor layer in the second region; a first conductive layer connected to the semiconductor layer in the first aperture portion and overlapping with the semiconductor layer in the first region via the first insulating layer in a planar view; and a second conductive layer connected to the semiconductor layer in the second aperture.

公开(公告)号：US20190244977A1

公开(公告)日：2019-08-08

申请号：US16385015

申请日：2019-04-16

Applicant: Japan Display Inc.

Inventor： Toshinari SASAKI ,  Shinichiro OKA ,  Takuma NISHINOHARA

IPC: H01L27/12 ,  G06F3/044 ,  G02F1/1339 ,  G02F1/1368 ,  G06F3/041 ,  G02F1/1333 ,  G02F1/1345 ,  G02F1/1362

Abstract: A semiconductor device includes a first resin layer, one or more first wirings above the first resin layer, a second resin layer above the first wiring, the second resin layer including a first opening part, a transistor above the second resin layer, the transistor including a semiconductor layer, a gate insulation layer, and a gate electrode layer; and a second wiring above the second resin layer, the second wiring being connected to the transistor and connected to the first wiring via the first opening part.

公开(公告)号：US20180226498A1

公开(公告)日：2018-08-09

申请号：US15880673

申请日：2018-01-26

Applicant: Japan Display Inc.

Inventor： Toshinari SASAKI ,  Masahiro Watabe ,  Masayoshi Fuchi ,  Isao Suzumura ,  Marina Shiokawa

IPC: H01L29/66 ,  H01L21/385 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/385 ,  H01L21/477 ,  H01L29/78609 ,  H01L29/7869

Abstract: A semiconductor device including a first oxide insulating layer, a barrier layer above the first oxide insulating layer, the barrier layer including an opening, a second oxide insulating layer above the first oxide insulating layer at a position overlapping the opening, an oxide semiconductor layer facing the first oxide insulating layer interposed by the second oxide insulating layer at a position overlapping the opening, a gate electrode facing the oxide semiconductor layer at side opposite to the first oxide insulating layer with respect to the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode. A contained amount of oxygen in the first oxide insulating layer is larger than a contained amount of oxygen in the second oxide insulating layer.

公开(公告)号：US20170012134A1

公开(公告)日：2017-01-12

申请号：US15189279

申请日：2016-06-22

Applicant: Japan Display Inc.

Inventor： Toshinari SASAKI ,  Isao SUZUMURA

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/4763 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L21/47635 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66969

Abstract: A manufacturing method of a semiconductor device includes forming an oxide semiconductor layer on an insulating layer, a part of the insulating layer being exposed from the oxide semiconductor layer, performing a plasma process by use of chlorine-containing gas on the part of the insulating layer exposed from the oxide semiconductor layer, and removing chlorine impurities from a surface layer of the exposed part of the insulating layer. The chlorine impurities may be removed by a first etching process performed by use of fluorine-containing gas. The fluorine-containing gas may contain CF4 and CHF3. The plasma process may be a second etching process performed by use of chlorine-containing gas.

Abstract translation: 半导体器件的制造方法包括在绝缘层上形成氧化物半导体层，绝缘层的一部分从氧化物半导体层露出，在绝缘层的一部分使用含氯气体进行等离子体处理 从氧化物半导体层露出，并从绝缘层的暴露部分的表面层去除氯杂质。 可以通过使用含氟气体进行的第一蚀刻工艺除去氯杂质。 含氟气体可以含有CF 4和CHF 3。 等离子体处理可以是通过使用含氯气体进行的第二蚀刻工艺。

公开(公告)号：US20170003537A1

公开(公告)日：2017-01-05

申请号：US15193261

申请日：2016-06-27

Applicant: Japan Display Inc.

Inventor： Shinichiro OKA ,  Toshinari SASAKI ,  Yasushi TOMIOKA

IPC: G02F1/13363 ,  G02F1/1337 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1343

CPC classification number: G02F1/13363 ,  G02F1/133305 ,  G02F1/133634 ,  G02F1/133723 ,  G02F2001/133633 ,  G02F2413/02 ,  G02F2413/11

Abstract: There is provided a display device including a first base material, a second base material, an optical layer placed between the first base material and the second base material, and a first retardation layer placed in contact with the first base material, wherein the first base material and the second base material are formed from a polyimide, and the first retardation layer and the second retardation layer are liquid crystal layers which are vertically aligned. Providing the first and second retardation layers in contact with the first and second base materials make it possible to achieve a reduction in the thickness of the display device.

Abstract translation: 提供一种显示装置，包括第一基材，第二基材，放置在第一基材和第二基材之间的光学层，以及与第一基材接触放置的第一延迟层，其中第一基材 材料和第二基材由聚酰亚胺形成，并且第一延迟层和第二延迟层是垂直取向的液晶层。 提供与第一和第二基底材料接触的第一和第二延迟层使得可以实现显示装置的厚度的减小。