IMS formed as can for semiconductor housing
    44.
    发明授权
    IMS formed as can for semiconductor housing 有权
    IMS形成为半导体外壳的容器

    公开(公告)号:US08089147B2

    公开(公告)日:2012-01-03

    申请号:US11591834

    申请日:2006-11-02

    Abstract: An insulated metal substrate composite has a patterned conductive layer on one surface and receives one or more electrodes of MOSFETs or other die on the patterned segments which lead to the edge of the IMS. The outer periphery of the IMS is cupped or bent to form a shallow can with two or more die fixed to and thermally coupled to the flat web of the can while electrodes on the die surfaces thermally coupled to the web of the can lead to terminals on the rim of the can which are coplanar with the bottom surfaces of the die. The electrodes can be externally or internally connected to form a half bridge circuit.

    Abstract translation: 绝缘金属衬底复合材料在一个表面上具有图案化的导电层,并且在图案化区段上接收通向IMS边缘的一个或多个MOSFET电极或其它管芯。 IMS的外围被杯形或弯曲以形成一个浅的罐,其中两个或多个管芯被固定并且热耦合到罐的扁平腹板上,而与模具表面热耦合的模具表面上的电极可以导致端子 罐的边缘与模具的底表面共面。 电极可以在外部或内部连接以形成半桥电路。

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