公开(公告)号：US20200251579A1

公开(公告)日：2020-08-06

申请号：US16854262

申请日：2020-04-21

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Yasunari UMEMOTO ,  Masahiro SHIBATA ,  Shigeki KOYA ,  Masao KONDO ,  Takayuki TSUTSUI

IPC: H01L29/737 ,  H01L29/205 ,  H03F3/195 ,  H03F3/213 ,  H01L29/66 ,  H01L21/308 ,  H01L21/311 ,  H01L21/285 ,  H01L21/02 ,  H01L21/306 ,  H01L29/423 ,  H01L29/417 ,  H01L29/08 ,  H01L29/10 ,  H01L23/00 ,  H03F3/24 ,  H03F1/56 ,  H03F3/21

Abstract: A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

公开(公告)号：US20200219995A1

公开(公告)日：2020-07-09

申请号：US16822889

申请日：2020-03-18

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari UMEMOTO ,  Shigeki KOYA ,  Isao OBU

IPC: H01L29/737 ,  H01L29/66 ,  H01L29/08

Abstract: A collector layer of an HBT includes a high-concentration collector layer and a low-concentration collector layer thereon. The low-concentration collector layer includes a graded collector layer in which the energy band gap varies to narrow with increasing distance from the base layer. The electron affinity of the semiconductor material for the base layer is greater than that of the semiconductor material for the graded collector layer at the point of the largest energy band gap by about 0.15 eV or less. The electron velocity in the graded collector layer peaks at a certain electric field strength. In the graded collector layer, the strength of the quasi-electric field, an electric field that acts on electrons as a result of the varying energy band gap, is between about 0.3 times and about 1.8 times the peak electric field strength, the electric field strength at which the electron velocity peaks.

公开(公告)号：US20200091874A1

公开(公告)日：2020-03-19

申请号：US16569271

申请日：2019-09-12

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kenji SASAKI ,  Isao OBU ,  Takayuki TSUTSUI

IPC: H03F3/19 ,  H03F3/213 ,  H03F1/30

Abstract: In a radio frequency power amplifier, a semiconductor chip includes at least one first transistor amplifying a radio frequency signal, a first external-connection conductive member connected to the first transistor, a bias circuit including a second transistor that applies a bias voltage to the first transistor, and a second external-connection conductive member connected to the second transistor. The second external-connection conductive member at least partially overlaps with the second transistor when viewed in plan.

公开(公告)号：US20200027876A1

公开(公告)日：2020-01-23

申请号：US16440700

申请日：2019-06-13

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Shigeki KOYA ,  Yasunari UMEMOTO ,  Takayuki TSUTSUI

IPC: H01L27/082 ,  H01L21/8252 ,  H01L23/00 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L29/66 ,  H01L23/498

Abstract: A semiconductor device has a semiconductor substrate, and multiple first bipolar transistors on the first primary surface side of the semiconductor substrate. The first bipolar transistors have a first height between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. The semiconductor device further has at least one second bipolar transistor on the first primary surface side of the semiconductor substrate. The second bipolar transistor have a second height, greater than the first height, between an emitter layer and an emitter electrode in the direction perpendicular to the first primary surface. Also, the semiconductor has a first bump stretching over the multiple first bipolar transistors and the at least one second bipolar transistor.

公开(公告)号：US20190386122A1

公开(公告)日：2019-12-19

申请号：US16436674

申请日：2019-06-10

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari UMEMOTO ,  Isao OBU ,  Kaoru IDENO ,  Shigeki KOYA

IPC: H01L29/737 ,  H01L29/417 ,  H01L29/423

Abstract: A collector layer, a base layer, and an emitter layer that are disposed on a substrate form a bipolar transistor. An emitter electrode is in ohmic contact with the emitter layer. The emitter layer has a shape that is long in one direction in plan view. A difference in dimension with respect to a longitudinal direction of the emitter layer between the emitter layer and an ohmic contact interface at which the emitter layer and the emitter electrode are in ohmic contact with each other is larger than a difference in dimension with respect to a width direction of the emitter layer between the emitter layer and the ohmic contact interface.

公开(公告)号：US20190115457A1

公开(公告)日：2019-04-18

申请号：US16152285

申请日：2018-10-04

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasunari UMEMOTO ,  Shigeki KOYA ,  Isao OBU

IPC: H01L29/737 ,  H01L29/205 ,  H01L29/08 ,  H01L29/10 ,  H01L21/285 ,  H01L21/308 ,  H01L21/306 ,  H01L29/66

Abstract: A heterojunction bipolar transistor includes a collector layer, a base layer, and an emitter layer that are stacked on a substrate. The collector layer includes a graded semiconductor layer in which an electron affinity increases from a side closer to the base layer toward a side farther from the base layer. An electron affinity of the base layer at an interface closer to the collector layer is equal to an electron affinity of the graded semiconductor layer at an interface closer to the base layer.

公开(公告)号：US20190115338A1

公开(公告)日：2019-04-18

申请号：US16219886

申请日：2018-12-13

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kenji SASAKI ,  Takayuki TSUTSUI ,  Isao OBU ,  Yasuhisa YAMAMOTO

IPC: H01L27/02 ,  H03F3/213 ,  H01L23/00 ,  H01L29/417 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H03F1/52 ,  H03F3/195

Abstract: An amplifier circuit including a semiconductor element is formed on a substrate. A protection circuit formed on the substrate includes a plurality of protection diodes that are connected in series with each other, and the protection circuit is connected to an output terminal of the amplifier circuit. A pad conductive layer at least partially includes a pad for connecting to a circuit outside the substrate. The pad conductive layer and the protection circuit at least partially overlap each other in plan view.

公开(公告)号：US20190051645A1

公开(公告)日：2019-02-14

申请号：US16038040

申请日：2018-07-17

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kenji SASAKI ,  Isao OBU

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/47

Abstract: A semiconductor device includes a sub-collector layer disposed on a substrate, a bipolar transistor including a collector layer formed of a semiconductor having a lower carrier concentration than the sub-collector layer, a base layer, and an emitter layer, and a protection diode including a Schottky electrode. The Schottky electrode forms, in a partial region of an upper surface of the collector layer, a Schottky junction to the collector layer and is connected to one of the base layer and the emitter layer. In the collector layer, a part that forms a junction to the base layer and a part that forms a junction to the Schottky electrode are electrically connected to each other via the collector layer.

公开(公告)号：US20180309417A1

公开(公告)日：2018-10-25

申请号：US15946552

申请日：2018-04-05

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Isao OBU ,  Yasunari UMEMOTO ,  Masahiro SHIBATA ,  Kenichi NAGURA

IPC: H03F1/52 ,  H01L23/00 ,  H01L29/06 ,  H01L29/04 ,  H03F3/213 ,  H01L29/737 ,  H01L27/02 ,  H01L27/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/205 ,  H01L21/265 ,  H01L29/417 ,  H01L29/423 ,  H01L23/48 ,  H01L29/861 ,  H01L21/768 ,  H03F3/195 ,  H01L21/02 ,  H01L29/36 ,  H01L29/207 ,  H01L29/45 ,  H01L21/285 ,  H01L21/3213 ,  H01L21/027 ,  H01L29/66 ,  H01L21/306 ,  H01L21/311

CPC classification number: H03F1/52 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/0274 ,  H01L21/2654 ,  H01L21/28575 ,  H01L21/30612 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/76898 ,  H01L21/8252 ,  H01L23/291 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/481 ,  H01L23/5383 ,  H01L23/5386 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L24/85 ,  H01L25/16 ,  H01L27/0248 ,  H01L27/0605 ,  H01L27/0635 ,  H01L27/0652 ,  H01L27/0664 ,  H01L29/045 ,  H01L29/0642 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/205 ,  H01L29/207 ,  H01L29/36 ,  H01L29/41708 ,  H01L29/42304 ,  H01L29/452 ,  H01L29/66204 ,  H01L29/66242 ,  H01L29/66318 ,  H01L29/7371 ,  H01L29/861 ,  H01L29/8613 ,  H01L2224/0221 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0362 ,  H01L2224/04042 ,  H01L2224/05025 ,  H01L2224/05084 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/0518 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/10329 ,  H01L2924/10337 ,  H01L2924/13051 ,  H01L2924/13063 ,  H01L2924/13064 ,  H01L2924/19041 ,  H01L2924/19043 ,  H03F1/565 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/426 ,  H03F2200/444 ,  H03F2200/451 ,  H01L2924/00

Abstract: A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

公开(公告)号：US20180247926A1

公开(公告)日：2018-08-30

申请号：US15902815

申请日：2018-02-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kenji SASAKI ,  Takayuki TSUTSUI ,  Isao OBU ,  Yasuhisa YAMAMOTO

IPC: H01L27/02 ,  H03F3/213 ,  H01L23/00 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L27/0255 ,  H01L24/05 ,  H01L24/06 ,  H01L24/17 ,  H01L24/49 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/41708 ,  H01L29/42304 ,  H01L2224/48463 ,  H01L2924/00014 ,  H03F1/52 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/444 ,  H01L2224/45099

Abstract: An amplifier circuit including a semiconductor element is formed on a substrate. A protection circuit formed on the substrate includes a plurality of protection diodes that are connected in series with each other, and the protection circuit is connected to an output terminal of the amplifier circuit. A pad conductive layer at least partially includes a pad for connecting to a circuit outside the substrate. The pad conductive layer and the protection circuit at least partially overlap each other in plan view.