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41.发明授权公开(公告)号：US12014991B2
公开(公告)日：2024-06-18
申请号：US17951474
申请日：2022-09-23
Inventor： Keunwook Shin , Kibum Kim , Hyunmi Kim , Hyeonjin Shin , Sanghun Lee
IPC: H01L23/538 , H01L23/00 , H01L23/532 , H01L29/16
CPC classification number: H01L23/5386 , H01L23/53204 , H01L23/5329 , H01L24/19 , H01L29/1606
Abstract: An interconnect structure may include a graphene-metal barrier on a substrate and a conductive layer on the graphene-metal barrier. The graphene-metal barrier may include a plurality of graphene layers and metal particles on grain boundaries of each graphene layer between the plurality of graphene layers. The metal particles may be formed at a ratio of 1 atom % to 10 atom % with respect to carbon of the plurality of graphene layers.
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公开(公告)号：US11978704B2
公开(公告)日：2024-05-07
申请号：US16933544
申请日：2020-07-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changseok Lee , Hyeonjin Shin , Seongjun Park , Donghyun Im , Hyun Park , Keunwook Shin , Jongmyeong Lee , Hanjin Lim
IPC: H01L23/532
CPC classification number: H01L23/53276 , H01L23/53238 , H01L23/53252 , H01L23/53266 , H01L2924/0002 , H01L2924/0002 , H01L2924/00
Abstract: Example embodiments relate to a wiring structure, a method of forming the same, and an electronic device employing the same. The wiring structure includes a first conductive material layer and a nanocrystalline graphene layer on the first conductive material layer in direct contact with the metal layer.
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公开(公告)号：US11935790B2
公开(公告)日：2024-03-19
申请号：US17370480
申请日：2021-07-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minsu Seol , Minhyun Lee , Junyoung Kwon , Hyeonjin Shin , Minseok Yoo
IPC: H01L21/8234 , H01L21/02 , H01L29/06 , H01L29/16 , H01L29/24 , H01L29/423 , H01L29/66 , H01L29/76 , H01L29/786
CPC classification number: H01L21/823412 , H01L21/02521 , H01L21/02527 , H01L21/02568 , H01L21/0259 , H01L21/823431 , H01L29/0665 , H01L29/1606 , H01L29/24 , H01L29/42392 , H01L29/66045 , H01L29/66969 , H01L29/7606 , H01L29/78696
Abstract: Disclosed are a field effect transistor and a method of manufacturing the same. The field effect transistor includes a source electrode on a substrate, a drain electrode separated from the source electrode, and channels connected between the source electrode and the drain electrode, gate insulating layers, and a gate electrode. The channels may have a hollow closed cross-sectional structure when viewed in a first cross-section formed by a plane across the source electrode and the drain electrode in a direction perpendicular to the substrate. The gate insulating layers may be in the channels. The gate electrode may be insulated from the source electrode and the drain electrode by the gate insulating layers.
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公开(公告)号：US11906291B2
公开(公告)日：2024-02-20
申请号：US17145966
申请日：2021-01-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eunkyu Lee , Yeonchoo Cho , Sangwon Kim , Kyung-Eun Byun , Hyunjae Song , Hyeonjin Shin
IPC: G01B15/02 , G01N23/2208 , H01L21/285 , H01L21/66 , H01L29/45 , G01N23/2273
CPC classification number: G01B15/02 , G01N23/2208 , G01N23/2273 , H01L21/28512 , H01L22/12 , H01L29/45 , G01N2223/085 , G01N2223/61
Abstract: A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.
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公开(公告)号：US11881399B2
公开(公告)日：2024-01-23
申请号：US17949418
申请日：2022-09-21
Inventor： Kyung-Eun Byun , Hyoungsub Kim , Taejin Park , Hoijoon Kim , Hyeonjin Shin , Wonsik Ahn , Mirine Leem , Yeonchoo Cho
IPC: H01L21/02
CPC classification number: H01L21/02568 , H01L21/0262 , H01L21/02491 , H01L21/02658
Abstract: A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.
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Patent Agency Ranking
公开(公告)号：US11862704B2
公开(公告)日：2024-01-02
申请号：US18059660
申请日：2022-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jinseong Heo , Yunseong Lee , Sanghyun Jo , Keunwook Shin , Hyeonjin Shin
CPC classification number: H01L29/513 , H01L21/0228 , H01L21/02115 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02356 , H01L29/516
Abstract: Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp2 bonding structure.
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公开(公告)号：US11626489B2
公开(公告)日：2023-04-11
申请号：US17541871
申请日：2021-12-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho Lee , Hyeonjin Shin , Dongwook Lee , Seongjun Park , Kiyoung Lee , Eunkyu Lee , Sanghyun Jo , Jinseong Heo
IPC: H01L31/0352 , H01L29/16 , H01L31/09 , H01L31/028 , H01L31/101 , H01L51/05 , H01L51/00 , H01L27/144 , H01L27/146 , H01L27/15 , H01L29/12 , H01L27/30
Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.
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公开(公告)号：US11342414B2
公开(公告)日：2022-05-24
申请号：US17001925
申请日：2020-08-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhyun Lee , Haeryong Kim , Hyeonjin Shin , Seunggeol Nam , Seongjun Park
IPC: H01L29/08 , H01L29/417 , H01L29/04 , H01L29/06 , H01L29/267 , H01L29/78 , H01L21/285 , H01L29/45 , H01L29/16 , H01L29/165
Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.
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公开(公告)号：US11217531B2
公开(公告)日：2022-01-04
申请号：US16884590
申请日：2020-05-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung-Eun Byun , Keunwook Shin , Yonghoon Kim , Hyeonjin Shin , Hyunjae Song , Changseok Lee , Changhyun Kim , Yeonchoo Cho
IPC: H01L23/532
Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.
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公开(公告)号：US11094538B2
公开(公告)日：2021-08-17
申请号：US16260403
申请日：2019-01-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Keunwook Shin , Changhyun Kim , Kaoru Yamamoto , Changseok Lee , Hyunjae Song , Eunkyu Lee , Kyung-Eun Byun , Hyeonjin Shin , Sungjoo An
Abstract: Provided is a method of forming graphene. The method of forming graphene includes treating a surface of a substrate placed in a reaction chamber with plasma while applying a bias to the substrate, and growing graphene on the surface of the substrate by plasma enhanced chemical vapor deposition (PECVD).
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