Abstract:
A module can include a module card and first and second microelectronic elements having front surfaces facing a first surface of the module card. The module card can also have a second surface and a plurality of parallel exposed edge contacts adjacent an edge of at least one of the first and second surfaces for mating with corresponding contacts of a socket when the module is inserted in the socket. Each microelectronic element can be electrically connected to the module card. The front surface of the second microelectronic element can partially overlie a rear surface of the first microelectronic element and can be attached thereto.
Abstract:
A module can include a module card and first and second microelectronic elements having front surfaces facing a first surface of the module card. The module card can also have a second surface and a plurality of parallel exposed edge contacts adjacent an edge of at least one of the first and second surfaces for mating with corresponding contacts of a socket when the module is inserted in the socket. Each microelectronic element can be electrically connected to the module card. The front surface of the second microelectronic element can partially overlie a rear surface of the first microelectronic element and can be attached thereto.
Abstract:
A method of making a microelectronic package includes forming a dielectric encapsulation layer on an in-process unit having a substrate having a first surface and a second surface remote therefrom. A microelectronic element is mounted to the first surface of the substrate, and a plurality of conductive elements exposed at the first surface, at least some of which are electrically connected to the microelectronic element. Wire bonds have bases joined to the conductive elements and end surfaces remote from the bases and define an edge surface extending away between the base and the end surface. The encapsulation layer is formed to at least partially cover the first surface and portions of the wire bonds with unencapsulated portions of the wire bonds being defined by at least one of the end surface or a portion of the edge surface that is uncovered thereby.
Abstract:
An interconnection substrate includes a plurality of electrically conductive elements of at least one wiring layer defining first and second lateral directions. Electrically conductive projections for bonding to electrically conductive contacts of at least one component external to the substrate, extend from the conductive elements above the at least one wiring layer. The conductive projections have end portions remote from the conductive elements and neck portions between the conductive elements and the end portions. The end portions have lower surfaces extending outwardly from the neck portions in at least one of the lateral directions. The substrate further includes a dielectric layer overlying the conductive elements and extending upwardly along the neck portions at least to the lower surfaces. At least portions of the dielectric layer between the conductive projections are recessed below a height of the lower surfaces.
Abstract:
An interconnect element 130 can include a dielectric layer 116 having a top face 116b and a bottom face 116a remote from the top face, a first metal layer defining a plane extending along the bottom face and a second metal layer extending along the top face. One of the first or second metal layers, or both, can include a plurality of conductive traces 132, 134. A plurality of conductive protrusions 112 can extend upwardly from the plane defined by the first metal layer 102 through the dielectric layer 116. The conductive protrusions 112 can have top surfaces 126 at a first height 115 above the first metal layer 132 which may be more than 50% of a height of the dielectric layer. A plurality of conductive vias 128 can extend from the top surfaces 126 of the protrusions 112 to connect the protrusions 112 with the second metal layer.
Abstract:
A microelectronic assembly can include a substrate having first and second surfaces, at least two logic chips overlying the first surface, and a memory chip having a front surface with contacts thereon, the front surface of the memory chip confronting a rear surface of each logic chip. The substrate can have conductive structure thereon and terminals exposed at the second surface for connection with a component. Signal contacts of each logic chip can be directly electrically connected to signal contacts of the other logic chips through the conductive structure of the substrate for transfer of signals between the logic chips. The logic chips can be adapted to simultaneously execute a set of instructions of a given thread of a process. The contacts of the memory chip can be directly electrically connected to the signal contacts of at least one of the logic chips through the conductive structure of the substrate.
Abstract:
A microelectronic assembly can include a substrate having first and second surfaces each extending in first and second transverse directions, a peripheral edge extending in the second direction, first and second openings extending between the first and second surfaces, and a peripheral region of the second surface extending between the peripheral edge and one of the openings. The assembly can also include a first microelectronic element having a front surface facing the first surface, a rear surface opposite therefrom, and an edge extending between the front and rear surfaces. The assembly can also include a second microelectronic element having a front surface facing the rear surface of the first microelectronic element and projecting beyond the edge of the first microelectronic element. The assembly can also include a plurality of terminals exposed at the second surface, at least one of the terminals being disposed at least partially within the peripheral region.
Abstract:
A method of making a microelectronic package includes forming a dielectric encapsulation layer on an in-process unit having a substrate having a first surface and a second surface remote therefrom. A microelectronic element is mounted to the first surface of the substrate, and a plurality of conductive elements exposed at the first surface, at least some of which are electrically connected to the microelectronic element. Wire bonds have bases joined to the conductive elements and end surfaces remote from the bases and define an edge surface extending away between the base and the end surface. The encapsulation layer is formed to at least partially cover the first surface and portions of the wire bonds with unencapsulated portions of the wire bonds being defined by at least one of the end surface or a portion of the edge surface that is uncovered thereby.
Abstract:
A method of making an assembly includes the steps of applying metallic nanoparticles to exposed surfaces of conductive elements of either of or both of a first component and a second component, juxtaposing the conductive elements of the first component with the conductive elements of the second component with the metallic nanoparticles disposed therebetween, and elevating a temperature at least at interfaces of the juxtaposed conductive elements to a joining temperature at which the metallic nanoparticles cause metallurgical joints to form between the juxtaposed conductive elements. The conductive elements of either of or both of the first component and the second component can include substantially rigid posts having top surfaces projecting a height above the surface of the respective component and edge surfaces extending at substantial angles away from the top surfaces thereof.
Abstract:
Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the interconnect structure having a top surface and portions of the side walls of the interconnect structure covered in a dissimilar material. In some embodiments, the dissimilar material can be a conductive material or a nano-alloy. The interconnect structure can be formed by removing a portion of the interconnect structure, and covering the interconnect structure with the dissimilar material. The interconnect structure can comprise a damascene structure, such as a single or dual damascene structure, or alternatively, can comprise a silicon-through via (TSV) structure.