公开(公告)号：US10036957B2

公开(公告)日：2018-07-31

申请号：US15010443

申请日：2016-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Ching-Yu Chang

IPC: G03F7/40 ,  G03F7/30 ,  G03F7/00

CPC classification number: G03F7/40 ,  G03F7/0035 ,  G03F7/30 ,  G03F7/405

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming a patterned photoresist on a material layer, applying a first bonding material to a side surface of the patterned photoresist, performing a treatment on the first bonding material to bond the first bonding material to the side surface of the patterned photoresist, wherein the treatment creates a bonding site on the first bonding material configured to bond to a second bonding material, applying the second bonding material to a side surface of the first bonding material, and patterning the material layer by selectively processing a portion of the material layer exposed by the patterned photoresist, the first bonding material, and the second bonding material.

公开(公告)号：US20180174828A1

公开(公告)日：2018-06-21

申请号：US15595525

申请日：2017-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/027 ,  H01L21/311

CPC classification number: C09D183/04 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/0332 ,  H01L21/3081

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming an under layer on a substrate; forming a silicon-containing middle layer on the under layer, wherein the silicon-containing middle layer has a thermal base generator (TBG) composite; forming a photosensitive layer on the silicon-containing middle layer; performing an exposing process to the photosensitive layer; and developing the photosensitive layer, thereby forming a patterned photosensitive layer.

公开(公告)号：US20180173096A1

公开(公告)日：2018-06-21

申请号：US15617300

申请日：2017-06-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/038 ,  G03F7/16 ,  G03F7/004 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/0047 ,  G03F7/325

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.

公开(公告)号：US20180040474A1

公开(公告)日：2018-02-08

申请号：US15491066

申请日：2017-04-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  B08B3/08 ,  G03F7/40 ,  G03F7/42 ,  G03F7/039 ,  G03F7/038 ,  C11D11/00 ,  H01L21/02 ,  G03F7/095

CPC classification number: H01L21/0274 ,  B08B3/08 ,  C11D11/0047 ,  G03F7/0043 ,  G03F7/038 ,  G03F7/039 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/095 ,  G03F7/11 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/38 ,  G03F7/40 ,  G03F7/425 ,  G03F7/426 ,  G03F7/70033 ,  G03F7/70091 ,  G03F7/70233 ,  G03F7/70308 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/67051

Abstract: A wafer is rinsed with a solvent. The wafer has an increased hydrophobicity as a result of being rinsed with the solvent. A metal-containing material is formed over the wafer after the wafer has been rinsed with the solvent. One or more lithography processes are performed at least in part using the metal-containing material. The metal-containing material is removed during or after the performing of the one or more lithography processes. The increased hydrophobicity of the wafer facilitates a removal of the metal-containing material.

公开(公告)号：US12300487B2

公开(公告)日：2025-05-13

申请号：US16559062

申请日：2019-09-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/02 ,  G03F7/004 ,  G03F7/16

Abstract: A method of forming a photoresist pattern includes forming an upper layer including a floating additive polymer over a photoresist layer formed on a substrate. The photoresist layer is selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer, and the upper layer is removed. The floating additive polymer is a siloxane polymer.

公开(公告)号：US12222654B2

公开(公告)日：2025-02-11

申请号：US17378507

申请日：2021-07-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui Weng ,  Chen-Yu Liu ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/32 ,  G03F1/82 ,  G03F7/00 ,  G03F7/30 ,  G03F7/40

Abstract: A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.

公开(公告)号：US20240377735A1

公开(公告)日：2024-11-14

申请号：US18783765

申请日：2024-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Joy Cheng ,  Ching-Yu Chang

IPC: G03F7/004

Abstract: A photoresist layer is formed over a wafer. The photoresist layer includes a metallic photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using the photoresist layer. The one or more additives include: a solvent having a boiling point greater than about 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.

公开(公告)号：US12106961B2

公开(公告)日：2024-10-01

申请号：US17581671

申请日：2022-01-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Yahru Cheng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/027 ,  G03F7/32 ,  H01L21/308

CPC classification number: H01L21/0274 ,  H01L21/3081

Abstract: A method for forming a semiconductor device is provided. The method includes applying a photoresist composition over a substrate, thereby forming a photoresist layer over the substrate; performing a first baking process to the photoresist layer; exposing the photoresist layer to an extreme ultraviolet (EUV) radiation, thereby forming a pattern therein; performing a second baking process to the photoresist layer; and developing the photoresist layer having the pattern therein using a developer, thereby forming a patterned photoresist layer. The first baking process and the second baking process are conducted under an ambient atmosphere having a humidity level ranging from 55% to 100%.

公开(公告)号：US12087644B2

公开(公告)日：2024-09-10

申请号：US17493209

申请日：2021-10-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Hau Shiu ,  Ching-Yu Chang ,  Jei Ming Chen ,  Jr-Yu Chen ,  Tze-Liang Lee

IPC: H01L21/02 ,  H01L21/66

CPC classification number: H01L22/12 ,  H01L21/02186 ,  H01L21/0228

Abstract: In an embodiment, a method includes performing a first atomic layer deposition (ALD) process to form a first material layer over a first blank wafer, the first ALD process comprising: performing a first precursor sub-cycle using a first precursor; performing a first purge sub-cycle using a inert gas; and performing a second precursor sub-cycle using a second precursor and the inert gas; and performing a second purge sub-cycle for a first duration over a second blank wafer different from the first blank wafer using the inert gas to deposit first defects onto the second blank wafer.

公开(公告)号：US12085855B2

公开(公告)日：2024-09-10

申请号：US17220705

申请日：2021-04-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Siao-Shan Wang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/027 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  C08L25/08 ,  C08L33/10

CPC classification number: G03F7/027 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/168 ,  G03F7/2004 ,  C08L25/08 ,  C08L33/10

Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.