公开(公告)号：US10991549B2

公开(公告)日：2021-04-27

申请号：US16213042

申请日：2018-12-07

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda ,  Toshihiko Iwao

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

Abstract: An antenna includes a first waveguide configured to guide VHF radio frequency waves, and a second waveguide configured to guide the VHF radio frequency waves supplied from the first waveguide, the second waveguide having a pair of metal reflective plates therein facing each other across a longitudinal distance along the second waveguide, wherein a tip end of the first waveguide is coupled to the second waveguide at a sideways point thereof between the metal reflective plates, and wherein a distance between the metal reflective plates is λg/4+λg·n/2, λg being a wavelength of the VHF radio frequency waves in tube, and n being an integer greater than or equal to zero.

公开(公告)号：US10319567B2

公开(公告)日：2019-06-11

申请号：US15075670

申请日：2016-03-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Akira Tanihara ,  Shigeru Kasai ,  Nobuhiko Yamamoto

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, which includes: a microwave output part for outputting the microwave; a microwave transmission part for transmitting the microwave; and a microwave radiation member for radiating the microwave into the chamber. The microwave transmission part includes a plurality of microwave introduction mechanisms circumferentially arranged in a peripheral portion of the microwave radiation member and configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes a metal main body, a plurality of dielectric slow-wave members arranged in an overall annular shape in the vicinity of an arrangement surface of the main body, an annular dielectric microwave transmission member arranged in a microwave radiation surface of the main body, and a slot antenna part installed between the slow-wave members and the microwave transmission member.

公开(公告)号：US20180374680A1

公开(公告)日：2018-12-27

申请号：US16004848

申请日：2018-06-11

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda

IPC: H01J37/32 ,  H01L21/677

Abstract: Disclosed is a plasma processing apparatus including a plurality of microwave radiating mechanisms configured to radiate microwaves output from an output unit in a surface wave plasma source into a processing container. The plasma processing apparatus includes a controller configured to generate plasma, while a plasma processing is not performed on a substrate, by radiating microwaves with total power which is 1/50 or less of total power of microwaves per unit area radiated when the plasma processing is performed on the substrate.

公开(公告)号：US09548187B2

公开(公告)日：2017-01-17

申请号：US14095563

申请日：2013-12-03

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda ,  Tomohito Komatsu ,  Shigeru Kasai ,  Hiroyuki Miyashita ,  Yuki Osada ,  Akira Tanihara ,  Yutaka Fujino

IPC: H01J37/32

CPC classification number: H01J37/3222 ,  H01J37/32201

Abstract: A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave.

Abstract translation: 微波辐射天线包括具有微波辐射表面的天线体; 处理气体入口，被配置为将处理气体引入到天线体中; 气体扩散空间，其构造成将所述处理气体扩散到所述天线体中; 多个气体出口，其设置在所述天线体中并且被配置为将所述处理气体排出到所述室中; 在槽与气体扩散空间和气体出口分离的状态下设置在天线体中的多个槽; 以及设置在天线体的微波辐射面侧的环状电介质部件，以覆盖形成槽的槽形成区域。 通过微波辐射通过狭缝和环形电介质构成的微波辐射表面形成金属表面波，并通过金属表面波产生表面波等离子体。

公开(公告)号：US09281154B2

公开(公告)日：2016-03-08

申请号：US13789115

申请日：2013-03-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Yuki Osada ,  Shigeru Kasai ,  Hiroyuki Miyashita

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J23/00 ,  C23C16/455 ,  C23C16/511 ,  H01J37/32 ,  H05H1/46

CPC classification number: H01J23/005 ,  C23C16/45565 ,  C23C16/511 ,  H01J37/3222 ,  H01J37/32256 ,  H05H1/46 ,  H05H2001/463

Abstract: The microwave introducing mechanism includes an antenna unit having a planar antenna radiating a microwave into a chamber; a tuner for performing impedance matching; and a heat dissipation device for dissipating a heat from the antenna unit. The tuner has a tuner main body including a tubular outer conductor and a tubular inner conductor to serve as a part of a microwave transmission line; slugs provided between the outer conductor and the inner conductor to be movable along a longitudinal direction of the inner conductor; and a driving device for moving the slugs. The heat dissipation device has a heat pipe configured to transfer the heat of the antenna unit from its heat input end to its heat dissipation end.

Abstract translation: 微波引入机构包括具有将微波辐射到室中的平面天线的天线单元; 用于执行阻抗匹配的调谐器; 以及用于从天线单元散热的散热装置。 调谐器具有调谐器主体，其包括用作微波传输线的一部分的管状外部导体和管状内部导体; 设置在外部导体和内部导体之间的小块能够沿着内部导体的纵向方向移动; 以及用于移动s。的驱动装置。 散热装置具有将天线部的热量从其热输入端传递到其散热端的热管。

公开(公告)号：US20130180661A1

公开(公告)日：2013-07-18

申请号：US13789115

申请日：2013-03-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro Ikeda ,  Yuki Osada ,  Shigeru Kasai ,  Hiroyuki Miyashita

IPC: H01J23/00

CPC classification number: H01J23/005 ,  C23C16/45565 ,  C23C16/511 ,  H01J37/3222 ,  H01J37/32256 ,  H05H1/46 ,  H05H2001/463

Abstract: The microwave introducing mechanism includes an antenna unit having a planar antenna radiating a microwave into a chamber; a tuner for performing impedance matching; and a heat dissipation device for dissipating a heat from the antenna unit. The tuner has a tuner main body including a tubular outer conductor and a tubular inner conductor to serve as a part of a microwave transmission line; slugs provided between the outer conductor and the inner conductor to be movable along a longitudinal direction of the inner conductor; and a driving device for moving the slugs. The heat dissipation device has a heat pipe configured to transfer the heat of the antenna unit from its heat input end to its heat dissipation end.

Abstract translation: 微波引入机构包括具有将微波辐射到室中的平面天线的天线单元; 用于执行阻抗匹配的调谐器; 以及用于从天线单元散热的散热装置。 调谐器具有调谐器主体，其包括用作微波传输线的一部分的管状外部导体和管状内部导体; 设置在外部导体和内部导体之间的小块能够沿着内部导体的纵向方向移动; 以及用于移动s。的驱动装置。 散热装置具有将天线部的热量从其热输入端传递到其散热端的热管。

公开(公告)号：US12261025B2

公开(公告)日：2025-03-25

申请号：US18256683

申请日：2021-12-07

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda ,  Satoru Kawakami

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02

Abstract: A plasma processing apparatus includes: a shower head provided above a substrate supporter; a gas supply pipe extending vertically above a chamber to be connected to an upper center of the shower head; an introducer through which the gas supply pipe passes and into which an electromagnetic wave of a VHF or higher is introduced to activate a gas; and an electromagnetic-wave supply path connected to the gas supply pipe. The introducer has a first dissociation space arranged upstream of the shower head and to which a first gas is supplied. The chamber has a second dissociation space between the substrate supporter and the shower head. The first gas dissociated in the first dissociation space and a second gas from the gas supply pipe are joined in the second dissociation space where they are dissociated by a radio-frequency wave having a frequency lower than that of the electromagnetic wave.

公开(公告)号：US12165846B2

公开(公告)日：2024-12-10

申请号：US17411992

申请日：2021-08-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiki Kamata ,  Taro Ikeda ,  Haruhiko Furuya

IPC: H01J37/32 ,  C23C16/455

Abstract: There is provided a plasma processing apparatus. The apparatus comprises a chamber having a processing space for performing plasma processing on a substrate and a combining space for combining electromagnetic waves, a dielectric window separating the processing space from the combining space, an antenna unit having a plurality of antennas radiating the electromagnetic waves to the combining space and functioning as a phased array antenna, an electromagnetic wave output unit that outputs the electromagnetic waves to the antenna unit, a stage on which the substrate is placed, a gas supply unit that supplies a gas for ALD film formation to the processing space, and a controller that controls the gas supply unit to supply the gas to perform the ALD film formation and control localized plasma to move at a high speed in the processing space by causing the antenna unit to function as the phased array antenna.

公开(公告)号：US20240312767A1

公开(公告)日：2024-09-19

申请号：US18592336

申请日：2024-02-29

Applicant: Tokyo Electron Limited

Inventor： Taro HAYAKAWA ,  Taro Ikeda ,  Eiki Kamata

IPC: H01J37/32

CPC classification number: H01J37/3222 ,  H01J37/32229 ,  H01J2237/327

Abstract: A plasma processing apparatus comprises a processing chamber having an upper opening, a dielectric ceiling plate that is disposed to close the opening and partitions an inner space and an outer space of the processing chamber, and a plurality of electromagnetic wave supplies disposed on the dielectric ceiling plate and configured to supply electromagnetic waves into the processing chamber. The dielectric ceiling plate has a cavity between the plurality of electromagnetic wave supplies. The cavity is formed in a surface of the dielectric ceiling plate in contact with the outer space or formed inside the dielectric ceiling plate.

公开(公告)号：US12068208B2

公开(公告)日：2024-08-20

申请号：US17475736

申请日：2021-09-15

Applicant: Tokyo Electron Limited

Inventor： Taro Ikeda ,  Yuki Osada

IPC: H01J37/32 ,  C23C14/54 ,  C23C16/455 ,  C23C16/511 ,  C23C16/52 ,  C23C16/54 ,  H01L21/66

CPC classification number: H01L22/24 ,  C23C14/54 ,  C23C16/45508 ,  C23C16/4558 ,  C23C16/511 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32192 ,  H01J37/32935 ,  H01J37/32954 ,  H01J37/3299 ,  H01L22/12 ,  H01J37/32972

Abstract: A method of controlling plasma includes providing a plasma processing apparatus that includes N microwave introducing radiators disposed in a circumferential direction of a ceiling plate of a processing container so as to introduce microwaves for generating plasma into the processing container, wherein N≥2; and M sensors and configured to monitor at least one of electron density Ne and electron temperature Te of the plasma generated in the processing container, wherein M equals to N or a multiple of N. The method further includes controlling at least one of a power and a phase of the microwaves introduced from the microwave introducing radiators based on at least one of electron density Ne and electron temperature Te of the plasma monitored by the M sensors.