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    Semiconductor device
    43.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11631613B2

    公开(公告)日：2023-04-18

    申请号：US17185443

    申请日：2021-02-25

    Applicant: United Microelectronics Corp.

    Inventor： Chih-Kai Hsu ,  Ssu-I Fu ,  Chia-Jung Hsu ,  Chun-Ya Chiu ,  Chin-Hung Chen ,  Yu-Hsiang Lin

    IPC: H01L27/146 ,  H01L21/768 ,  H01L27/108

    Abstract: Provided is a semiconductor device, including a substrate including a pixel region, a gate structure on the substrate in the pixel region, wherein the gate structure comprises a gate dielectric layer and a gate conductive layer on the gate dielectric layer; a dielectric layer located over the substrate and the gate structure; and a contact located in the dielectric layer and electrically connected to the gate conductive layer. The contact includes a doped polysilicon layer in contact with the gate conductive layer; a metal layer located on the doped polysilicon layer, wherein a part of the metal layer is embedded in the doped polysilicon layer; a barrier layer located between the metal layer and the doped polysilicon layer; and a metal silicide layer located between the barrier layer and the doped polysilicon layer.

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    45.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220005957A1

    公开(公告)日：2022-01-06

    申请号：US17476461

    申请日：2021-09-15

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chin-Hung Chen ,  Ssu-I Fu ,  Chih-Kai Hsu ,  Chun-Ya Chiu ,  Chia-Jung Hsu ,  Yu-Hsiang Lin

    IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L21/306 ,  H01L21/02

    Abstract: A manufacturing method of a semiconductor device includes the following steps. An opening is formed penetrating a dielectric layer on a semiconductor substrate. A stacked structure is formed on the dielectric layer. The stacked structure includes a first semiconductor layer partly formed in the opening and partly formed on the dielectric layer, a sacrificial layer formed on the first semiconductor layer, and a second semiconductor layer formed on the sacrificial layer. A patterning process is performed for forming a fin-shaped structure including the first semiconductor layer, the sacrificial layer, and the second semiconductor layer. An etching process is performed to remove the sacrificial layer in the fin-shaped structure. The first semiconductor layer in the fin-shaped structure is etched to become a first semiconductor wire by the etching process. The second semiconductor layer in the fin-shaped structure is etched to become a second semiconductor wire by the etching process.

    SEMICONDUCTOR DEVICE
    46.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210202308A1

    公开(公告)日：2021-07-01

    申请号：US17185443

    申请日：2021-02-25

    Applicant: United Microelectronics Corp.

    Inventor： Chih-Kai Hsu ,  Ssu-I Fu ,  Chia-Jung Hsu ,  Chun-Ya Chiu ,  Chin-Hung Chen ,  Yu-Hsiang Lin

    IPC: H01L21/768 ,  H01L27/108

    Abstract: Provided is a semiconductor device, including a substrate including a pixel region, a gate structure on the substrate in the pixel region, wherein the gate structure comprises a gate dielectric layer and a gate conductive layer on the gate dielectric layer; a dielectric layer located over the substrate and the gate structure; and a contact located in the dielectric layer and electrically connected to the gate conductive layer. The contact includes a doped polysilicon layer in contact with the gate conductive layer; a metal layer located on the doped polysilicon layer, wherein a part of the metal layer is embedded in the doped polysilicon layer; a barrier layer located between the metal layer and the doped polysilicon layer; and a metal silicide layer located between the barrier layer and the doped polysilicon layer.

    Semiconductor structure and method for forming the same
    49.
    发明授权
    Semiconductor structure and method for forming the same 有权

    公开(公告)号：US10347526B1

    公开(公告)日：2019-07-09

    申请号：US15951683

    申请日：2018-04-12

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chih-Kai Hsu ,  Ssu-I Fu ,  Chun-Ya Chiu ,  Chi-Ting Wu ,  Chin-Hung Chen ,  Yu-Hsiang Lin

    IPC: H01L21/768 ,  H01L23/485 ,  H01L23/532

    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate, a gate structure, and a conductive element. The gate structure is on the substrate. The gate structure includes a gate electrode and a cap layer on the gate electrode. The conductive element is adjoined with an outer surface of the gate structure. The conductive element includes a lower conductive portion and an upper conductive portion electrically connected on the lower conductive portion and adjoined with the cap layer. The lower conductive portion and the upper conductive portion have an interface therebetween. The interface is below an upper surface of the cap layer.

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