Epitaxial growth of compound semiconductors using lattice-tuned domain-matching epitaxy
    41.
    发明申请
    Epitaxial growth of compound semiconductors using lattice-tuned domain-matching epitaxy 审中-公开
    使用晶格调谐域匹配外延的化合物半导体的外延生长

    公开(公告)号:US20150090180A1

    公开(公告)日:2015-04-02

    申请号:US14040326

    申请日:2013-09-27

    CPC classification number: C30B25/183 C30B23/025 C30B29/403 C30B29/406

    Abstract: A method of epitaxially growing a final film using a crystalline substrate wherein the final film cannot be grown directly on the substrate surface is disclosed. The method includes forming a transition layer on the upper surface of the substrate. The transition layer has a lattice spacing that varies between its lower and upper surfaces. The lattice spacing at the lower surface matches the lattice spacing of the substrate to within a first lattice mismatch of 7%. The lattice spacing at the upper surface matches the lattice spacing of the final film to within a second lattice mismatch of 7%. The method also includes forming the final film on the upper surface of the transition layer.

    Abstract translation: 公开了一种使用晶体衬底外延生长最终膜的方法,其中最终的膜不能直接在衬底表面上生长。 该方法包括在衬底的上表面上形成过渡层。 过渡层具有在其下表面和上表面之间变化的格间距。 下表面的晶格间距使衬底的晶格间距与7%的第一晶格失配相匹配。 上表面的晶格间距与最终膜的晶格间距匹配在7%的第二晶格失配之内。 该方法还包括在过渡层的上表面上形成最终的膜。

    Betavoltaic power sources for transportation applications
    42.
    发明申请
    Betavoltaic power sources for transportation applications 有权
    用于运输应用的Betavoltaic电源

    公开(公告)号:US20140021826A1

    公开(公告)日:2014-01-23

    申请号:US13933355

    申请日:2013-07-02

    CPC classification number: B60L11/18 B60L11/002 G21H1/00 G21H1/06

    Abstract: A betavoltaic power source for transportation devices and applications is disclosed, wherein the device having a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the transportation device over its useful lifetime.

    Abstract translation: 公开了用于运输设备和应用的贝塔伏特电源,其中所述设备具有同位素层和能量转换层的堆叠配置。 同位素层的半衰期在约0.5年至约5年之间,并产生能量在约15keV至约200keV范围内的辐射。 贝塔伏特电源被配置为提供足够的功率以在其使用寿命期间操作运输装置。

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