公开(公告)号：US20130278109A1

公开(公告)日：2013-10-24

申请号：US13863283

申请日：2013-04-15

Applicant: ULTRATECH, INC.

Inventor： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk

IPC: G21H1/02 ,  G21H1/06

CPC classification number: G21H1/02 ,  G21H1/06

Abstract: A betavoltaic power source for mobile devices and mobile applications includes a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the mobile device over its useful lifetime.

Abstract translation: 用于移动设备和移动应用的贝塔伏特电源包括同位素层和能量转换层的堆叠配置。 同位素层的半衰期在约0.5年至约5年之间，并产生能量在约15keV至约200keV范围内的辐射。 贝塔伏特电源被配置为提供足够的功率来在其使用寿命期间操作移动设备。

公开(公告)号：US09583337B2

公开(公告)日：2017-02-28

申请号：US14601944

申请日：2015-01-21

Applicant: Ultratech, Inc.

Inventor： Arthur W. Zafiropoulo

IPC: C23C16/40 ,  H01L21/02 ,  C23C16/455 ,  C23C16/507

CPC classification number: H01L21/02274 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45536 ,  C23C16/507 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/0228

Abstract: A method of performing an oxygen radical enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming an ozone plasma to generate oxygen radicals O*. The method also includes feeding the oxygen radicals and a precursor gas sequentially into the interior of the reactor chamber to form an oxide film on the substrate surface. A system for performing the oxygen radical enhanced atomic-layer deposition process is also disclosed.

Abstract translation: 公开了一种在位于反应室内部的基板表面上进行氧自由基增强的原子层沉积工艺的方法。 该方法包括形成臭氧等离子体以产生氧自由基O *。 该方法还包括将氧自由基和前体气体顺序地进料到反应器室的内部以在基板表面上形成氧化膜。 还公开了一种用于进行氧自由基增强的原子层沉积工艺的系统。

公开(公告)号：US20160240440A1

公开(公告)日：2016-08-18

申请号：US15141783

申请日：2016-04-28

Applicant: Ultratech, Inc.

Inventor： Arthur W. Zafiropoulo ,  Yun Wang ,  Andrew M. Hawryluk

IPC: H01L21/822 ,  H01L27/06 ,  H01L21/02

CPC classification number: H01L21/8221 ,  H01L21/02532 ,  H01L21/02645 ,  H01L21/02678 ,  H01L27/0688 ,  Y10T29/53174 ,  Y10T117/1024

Abstract: Provided are systems and processes for forming a three-dimensional circuit on a substrate. A radiation source produces a beam that is directed at a substrate having an isolating layer interposed between circuit layers. The circuit layers communicate with each other via a seed region exhibiting a crystalline surface. At least one circuit layer has an initial microstructure that exhibits electronic properties unsuitable for forming circuit features therein. After being controllably heat treated, the initial microstructure of the circuit layer having unsuitable properties is transformed into one that exhibits electronic properties suitable for forming circuit feature therein. Also provided are three-dimensional circuit structures optionally formed by the inventive systems and/or processes.

Abstract translation: 提供了在基板上形成三维电路的系统和工艺。 辐射源产生被引导到衬底上的光束，该衬底具有介于电路层之间的隔离层。 电路层通过呈现结晶表面的种子区域相互连通。 至少一个电路层具有显示不适于在其中形成电路特征的电子性质的初始微结构。 在可控地热处理之后，具有不合适特性的电路层的初始微结构被转化成具有适于形成电路特性的电子特性的微结构。 还提供了可选地由本发明的系统和/或过程形成的三维电路结构。

公开(公告)号：US20140238958A1

公开(公告)日：2014-08-28

申请号：US13781682

申请日：2013-02-28

Applicant: ULTRATECH, INC.

Inventor： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk

IPC: B23K26/00

CPC classification number: B23K26/352

Abstract: Systems and methods for processing a material layer supported by a substrate using a light-source assembly that includes LED light sources each formed from an array of LEDs. The material layer is capable of undergoing a photo-process having a temperature-dependent reaction rate. Some of the LEDs emit light of a first wavelength that initiate the photo-process while some of the LEDs emit light of a second wavelength that heats the substrate. The heat from the substrate then heats the material layer, which increases the temperature-dependent reaction rate of the photo-process.

Abstract translation: 用于使用包括由LED阵列形成的LED光源的光源组件来处理由衬底支撑的材料层的系统和方法。 材料层能够进行具有温度依赖性反应速率的光刻工艺。 一些LED发射第一波长的光，其启动光处理，而一些LED发射加热衬底的第二波长的光。 然后，来自基板的热量加热材料层，这增加了照相工艺的温度依赖性反应速率。

公开(公告)号：US09613828B2

公开(公告)日：2017-04-04

申请号：US14714544

申请日：2015-05-18

Applicant: Ultratech, Inc.

Inventor： James McWhirter ,  Arthur W. Zafiropoulo

IPC: H01L21/00 ,  H01L21/84 ,  H01L21/31 ,  H01L21/324 ,  H01L21/268

CPC classification number: H01L21/324 ,  H01L21/268

Abstract: Laser annealing of a semiconductor wafers using a forming gas for localized control of ambient oxygen gas to reduce the amount of oxidization during laser annealing is disclosed. The forming gas includes hydrogen gas and an inert buffer gas such as nitrogen gas. The localized heating of the oxygen gas and the forming gas in the vicinity of the annealing location on the surface of the semiconductor wafer creates a localized region within which combustion of oxygen gas and hydrogen gas occurs to generate water vapor. This combustion reaction reduces the oxygen gas concentration within the localized region, thereby locally reducing the amount of ambient oxygen gas, which in turn reduces oxidation rate at the surface of the semiconductor wafer during the annealing process.

公开(公告)号：US20160343583A1

公开(公告)日：2016-11-24

申请号：US14714544

申请日：2015-05-18

Applicant: Ultratech, Inc.

Inventor： James McWhirter ,  Arthur W. Zafiropoulo

IPC: H01L21/324 ,  H01L21/268

CPC classification number: H01L21/324 ,  H01L21/268

Abstract: Laser annealing of a semiconductor wafers using a forming gas for localized control of ambient oxygen gas to reduce the amount of oxidization during laser annealing is disclosed. The forming gas includes hydrogen gas and an inert buffer gas such as nitrogen gas. The localized heating of the oxygen gas and the forming gas in the vicinity of the annealing location on the surface of the semiconductor wafer creates a localized region within which combustion of oxygen gas and hydrogen gas occurs to generate water vapor. This combustion reaction reduces the oxygen gas concentration within the localized region, thereby locally reducing the amount of ambient oxygen gas, which in turn reduces oxidation rate at the surface of the semiconductor wafer during the annealing process.

Abstract translation: 公开了使用用于局部控制环境氧气的成形气体来减少激光退火期间氧化量的半导体晶片的激光退火。 形成气体包括氢气和诸如氮气的惰性缓冲气体。 在半导体晶片的表面上的退火位置附近的氧气和形成气体的局部加热产生局部区域，在该区域内发生氧气和氢气的燃烧以产生水蒸气。 该燃烧反应降低了局部区域内的氧气浓度，从而局部地减少环境氧气的量，这又降低了退火过程中半导体晶片表面的氧化速率。

公开(公告)号：US20140021826A1

公开(公告)日：2014-01-23

申请号：US13933355

申请日：2013-07-02

Applicant: Ultratech, Inc.

Inventor： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk

IPC: B60L11/18 ,  G21H1/06 ,  G21H1/00

CPC classification number: B60L11/18 ,  B60L11/002 ,  G21H1/00 ,  G21H1/06

Abstract: A betavoltaic power source for transportation devices and applications is disclosed, wherein the device having a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the transportation device over its useful lifetime.

Abstract translation: 公开了用于运输设备和应用的贝塔伏特电源，其中所述设备具有同位素层和能量转换层的堆叠配置。 同位素层的半衰期在约0.5年至约5年之间，并产生能量在约15keV至约200keV范围内的辐射。 贝塔伏特电源被配置为提供足够的功率以在其使用寿命期间操作运输装置。

公开(公告)号：US20160064208A1

公开(公告)日：2016-03-03

申请号：US14744409

申请日：2015-06-19

Applicant: Ultratech, Inc.

Inventor： Arthur W. Zafiropoulo ,  Mark J. Sowa

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/40 ,  C23C16/452 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/507 ,  H01L21/02164 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274

Abstract: A method of performing a radical-enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming plasma from a gas mixture consisting of CF4 and O2, wherein the CF4 is present in a concentration in the range from 0.1 vol % to 10 vol %. The plasma formed from the gas mixture generates oxygen radicals O* faster than if there were no CF4 present in the gas mixture. The method also includes feeding the oxygen radicals and a precursor gas sequentially into the interior of the reactor chamber to form an oxide film on the surface of the substrate. A system for performing the radical-enhanced atomic-layer deposition process using the rapidly formed oxygen radicals is also disclosed.

公开(公告)号：US09266437B2

公开(公告)日：2016-02-23

申请号：US13933355

申请日：2013-07-02

Applicant: Ultratech, Inc.

Inventor： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk

IPC: G21H1/06 ,  G21H1/02 ,  B60L11/18 ,  G21H1/00 ,  B60L11/00

CPC classification number: B60L11/18 ,  B60L11/002 ,  G21H1/00 ,  G21H1/06

Abstract: A betavoltaic power source for transportation devices and applications is disclosed, wherein the device having a stacked configuration of isotope layers and energy conversion layers. The isotope layers have a half-life of between about 0.5 years and about 5 years and generate radiation with energy in the range from about 15 keV to about 200 keV. The betavoltaic power source is configured to provide sufficient power to operate the transportation device over its useful lifetime.

Abstract translation: 公开了用于运输设备和应用的贝塔伏特电源，其中所述设备具有同位素层和能量转换层的堆叠配置。 同位素层的半衰期在约0.5年至约5年之间，并产生能量在约15keV至约200keV范围内的辐射。 贝塔伏特电源被配置为提供足够的功率以在其使用寿命期间操作运输装置。

公开(公告)号：US20150041431A1

公开(公告)日：2015-02-12

申请号：US13961655

申请日：2013-08-07

Applicant: Ultratech, Inc.

Inventor： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk

IPC: H01L21/027 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/0273 ,  G03F7/168 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  G03F7/405 ,  H01L21/67069

Abstract: Methods of laser processing photoresist in a gaseous environment to improve at least one of etch resistance and line-edge roughness are disclosed. The methods include sequentially introducing first and second molecular gases to the photoresist surface and performing respective first and second laser scanning of the surface for each molecular gas. The first molecular gas can be trimethyl aluminum, titanium tetrachloride or diethyl zinc, and the second molecular gas comprises water vapor. Short dwell times prevent the photoresist from flowing while serving to speed up the photoresist enhancement process.