公开(公告)号：US20020075094A1

公开(公告)日：2002-06-20

申请号：US09993095

申请日：2001-11-06

Applicant: Sarnoff Corporation

Inventor： Daniel Bechtle ,  Gordon C. Taylor ,  Ayre Rosen

IPC: H01P001/10

CPC classification number: B81B3/0008 ,  B81B2201/018 ,  G11C23/00 ,  H01G5/40 ,  H01H59/0009 ,  H01P1/127 ,  H01P9/00

Abstract: A microelectronic mechanical systems (MEMS) switch includes a vane formed over a substrate for electrically coupling an input line to an output line formed on the substrate. The vane includes flexible hinges, which support the vane from the input line and allow the vane to rotate about a pivot axis. The substrate includes pull-down and pull-back electrodes to actuate the MEMS switch. The pull-back electrode allows the present invention to overcome stiction effects.

Abstract translation: 微电子机械系统（MEMS）开关包括形成在衬底上的叶片，用于将输入线电耦合到形成在衬底上的输出线。 叶片包括柔性铰链，其从输入线支撑叶片并允许叶片围绕枢转轴线旋转。 衬底包括用于致动MEMS开关的下拉和拉回电极。 背面电极允许本发明克服静电效应。

公开(公告)号：US12077428B2

公开(公告)日：2024-09-03

申请号：US17411707

申请日：2021-08-25

Applicant: Massachusetts Institute of Technology ,  Nanyang Technological University

Inventor： Subra Suresh ,  Ming Dao ,  Ju Li ,  Zhe Shi

IPC: B81B3/00 ,  G06F30/27 ,  G06F111/10

CPC classification number: B81B3/0062 ,  G06F30/27 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/051 ,  B81B2203/053 ,  B81B2203/056 ,  G06F2111/10

Abstract: Compositions and methods related to multiaxially straining defect doped materials as well as their use in electrical circuits are generally described.

公开(公告)号：US12055927B2

公开(公告)日：2024-08-06

申请号：US17187296

申请日：2021-02-26

Applicant: Honeywell International Inc.

Inventor： Robert Compton ,  Chad Fertig ,  Jeffrey James Kriz

IPC: G05B6/02 ,  B81B3/00 ,  F28F13/00

CPC classification number: G05B6/02 ,  B81B3/0021 ,  F28F13/00 ,  B81B2201/01 ,  B81B2201/018 ,  B81B2203/0181 ,  B81B2203/019 ,  B81B2203/05 ,  B81B2203/058 ,  B81B2207/01 ,  B81B2207/053 ,  F28F2013/008

Abstract: A thermal metamaterial device comprises at least one MEMS thermal switch, including a substrate layer including a first material having a first thermal conductivity, and a thermal bus over a first portion of the substrate layer. The thermal bus includes a second material having a second thermal conductivity higher than the first thermal conductivity. An insulator layer is over a second portion of the substrate layer and includes a third material that is different from the first and second materials. A thermal pad is supported by a first portion of the insulator layer, the thermal pad including the second material and having an overhang portion located over a portion of the thermal bus. When a voltage is applied to the thermal pad, an electrostatic interaction occurs to cause a deflection of the overhang portion toward the thermal bus, thereby providing thermal conductivity between the thermal pad and the thermal bus.

公开(公告)号：US20230202831A1

公开(公告)日：2023-06-29

申请号：US17806130

申请日：2022-06-09

Applicant: Menlo Microsystems, Inc.

Inventor： Xu Zhu ,  Hajime Terazawa ,  Chris Nassar

IPC: B81B3/00

CPC classification number: B81B3/0018 ,  B81B2201/018 ,  B81B2207/053

Abstract: A micro-relay switch array may comprise an array of micro-relays disposed on a substrate, and a cap disposed over the array of micro-relays, thereby encapsulating the array of micro-relays. The micro-relay switch array may further comprise an array of through-substrate vias (TSVs) associated with the array of micro-relays, arranged such that columns of TSVs alternate with columns of micro-relays, and a plurality of device electrical conductors, each of which electrically couples one of the TSVs of the array of TSVs directly to at least two of the micro-relays. The micro-relay switch array may further comprise a plurality of TSV electrical conductors, each of which electrically couples at least two TSVs together. Each micro-relay of the array of micro-relays may be a micro-electromechanical system (MEMS) switch. The substrate and cap may be glass, and the TSVs may be through-glass vias.

公开(公告)号：US11681897B2

公开(公告)日：2023-06-20

申请号：US17114040

申请日：2020-12-07

Applicant: Cornell University

Inventor： Amit Lal ,  Serhan Ardanuc ,  Jason T. Hoople ,  Justin C. Kuo

IPC: G06N3/04 ,  B81B3/00 ,  G01S7/521 ,  G01S15/02 ,  G06V40/13 ,  G06N3/065 ,  G01N22/00 ,  G01N29/02 ,  G01N29/036 ,  H01J49/02 ,  G01S15/89 ,  G01S7/52 ,  H01H1/00

CPC classification number: G06N3/04 ,  B81B3/0021 ,  G01N22/00 ,  G01N29/022 ,  G01N29/036 ,  G01S7/521 ,  G01S15/02 ,  G06N3/065 ,  G06V40/1306 ,  H01J49/025 ,  B81B2201/018 ,  B81B2201/0214 ,  B81B2201/0285 ,  B81B2203/04 ,  G01S7/52079 ,  G01S15/8925 ,  H01H1/0094

Abstract: Techniques, systems, and devices are described for implementing for implementing computation devices and artificial neurons based on nanoelectromechanical (NEMS) systems. In one aspect, a nanoelectromechanical system (NEMS) based computing element includes: a substrate; two electrodes configured as a first beam structure and a second beam structure positioned in close proximity with each other without contact, wherein the first beam structure is fixed to the substrate and the second beam structure is attached to the substrate while being free to bend under electrostatic force. The first beam structure is kept at a constant voltage while the other voltage varies based on an input signal applied to the NEMS based computing element.

公开(公告)号：US20190074152A1

公开(公告)日：2019-03-07

申请号：US16083583

申请日：2017-03-10

Applicant: The University of Bristol

Inventor： Sunil Rana ,  Dinesh Pamunuwa ,  Liam Anand Boodhoo ,  Harold Meng Hoon Chong

IPC: H01H59/00 ,  B81B3/00

CPC classification number: H01H59/0009 ,  B81B3/0005 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/019 ,  H01H2001/0052 ,  H01H2001/0057 ,  H01H2001/0078 ,  H01H2201/026 ,  H01H2209/002 ,  H01H2209/016 ,  H01H2227/002

Abstract: A electromechanical relay device (100) comprising a source electrode (102), a beam (104) mounted on the source electrode at a first end and electrically coupled to the source electrode; a first drain electrode (112) located adjacent a second end of the beam, wherein a first contact (110) on the beam is arranged to be separated from a second contact (112) on the first drain electrode when the relay device is in a first condition; a first gate electrode (106 arranged to cause the beam to deflect, to electrically couple the first contact and the second contact such that the device is in a second condition; and wherein the first and second contacts are each coated with a layer of nanocrystalline graphite.

公开(公告)号：US10081534B2

公开(公告)日：2018-09-25

申请号：US14730346

申请日：2015-06-04

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jeffrey C. Maling ,  Anthony K. Stamper ,  Dana R. DeReus ,  Arthur S. Morris, III

IPC: H01L29/84 ,  B81B3/00 ,  H01L23/34 ,  B81C1/00 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81C1/00333 ,  B81C1/00825 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01H1/0036 ,  H01L23/34 ,  H01L29/84 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

公开(公告)号：US09117593B2

公开(公告)日：2015-08-25

申请号：US14071173

申请日：2013-11-04

Applicant: RF Micro Devices, Inc.

Inventor： Kushal Bhattacharjee

IPC: H03H9/46 ,  H03H9/54 ,  H01G5/18 ,  H03H9/02 ,  H03H9/24 ,  B81B3/00

CPC classification number: H01G5/18 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2201/0271 ,  B81B2201/032 ,  H03H9/02275 ,  H03H9/02409 ,  H03H9/2405 ,  H03H9/2463 ,  H03H9/462 ,  H03H9/467 ,  H03H2009/241

Abstract: A MEMS device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. Notably, the piezoelectric layer is a bimorph including a first bimorph layer and a second bimorph layer. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with the first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the substrate, such that the second electrode is in contact with the second bimorph layer of the piezoelectric layer. The second electrode may include a first conducting section and a second conducting section, which are inter-digitally dispersed on the second surface.

Abstract translation: MEMS器件包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。 值得注意的是，压电层是包括第一双晶片层和第二双晶片层的双晶片。 第一电极可以设置在面对基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。 第二电极可以设置在与衬底相对的压电层的第二表面上，使得第二电极与压电层的第二双压电晶片层接触。 第二电极可以包括第一导电部分和第二导电部分，其在数字上分散在第二表面上。

公开(公告)号：US09102517B2

公开(公告)日：2015-08-11

申请号：US13591771

申请日：2012-08-22

Applicant: Jeffrey C. Maling ,  Anthony K. Stamper ,  Dana R. DeReus ,  Arthur S. Morris, III

Inventor： Jeffrey C. Maling ,  Anthony K. Stamper ,  Dana R. DeReus ,  Arthur S. Morris, III

IPC: H01L29/84 ,  B81C1/00 ,  H01L23/34 ,  H01H1/00

CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81C1/00333 ,  B81C1/00825 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01H1/0036 ,  H01L23/34 ,  H01L29/84 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

Abstract translation: 公开了微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括形成至少一个微机电系统（MEMS）腔。 用于形成空腔的方法还包括形成至少一个第一尺寸的第一通气孔，其尺寸设计成在密封过程中避免或最小化在梁结构上的材料沉积。 形成空腔的方法还包括形成大于第一尺寸的第二尺寸的至少一个第二通气孔。

公开(公告)号：US09012254B2

公开(公告)日：2015-04-21

申请号：US13981946

申请日：2012-07-31

Applicant: Oren Aharon ,  Shai Feldman

Inventor： Oren Aharon ,  Shai Feldman

IPC: H01L21/00 ,  B81C1/00 ,  H01H29/00

CPC classification number: H01H29/06 ,  B81B2201/018 ,  B81C1/00333 ,  B81C1/00341 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01H29/00 ,  H01H2029/008 ,  H01H2203/028

Abstract: Methods for forming an enclosed liquid metal (LM) drop inside a sealed cavity by formation of LM components as solid LM component layers and reaction of the solid LM component layers to form the LM drop. In some embodiments, the cavity has boundaries defined by layers or features of a microelectronics (e.g. VLSI-CMOS) or MEMS technology. In such embodiments, the methods comprise implementing an initial microelectronics or MEMS process to form the layers or features and the cavity, sequential or side by side formation of solid LM component layers in the cavity, sealing of the cavity to provide a closed space and reaction of the solid LM components to form a LM alloy in the general shape of a drop. In some embodiments, nanometric reaction barriers may be inserted between the solid LM component layers to lower the LM eutectic formation temperature.

Abstract translation: 通过形成作为固体LM组分层的LM组分形成密封空腔内的封闭液态金属（LM）滴的方法和固体LM组分层的反应形成LM滴。 在一些实施例中，空腔具有由微电子学（例如VLSI-CMOS）或MEMS技术的层或特征限定的边界。 在这样的实施例中，所述方法包括实现初始微电子学或MEMS工艺以形成所述层或特征，以及所述空腔，所述空腔中的固体LM组分层的顺序或并排形成，所述腔的密封以提供封闭空间和反应 的固体LM组分以形成一般形状的液滴的LM合金。 在一些实施方案中，可以在固体LM组分层之间插入纳米反应阻挡层以降低LM共晶形成温度。