MICROELECTROMECHANICAL STRUCTURE AND A METHOD FOR MAKING THE SAME
    41.
    发明申请
    MICROELECTROMECHANICAL STRUCTURE AND A METHOD FOR MAKING THE SAME 有权
    微电子结构及其制造方法

    公开(公告)号:US20060266730A1

    公开(公告)日:2006-11-30

    申请号:US10805610

    申请日:2004-03-18

    CPC classification number: B81C1/00793 B81B2201/042 B81C2201/053

    Abstract: A microstructure and the method for making the same are disclosed herein. The microstructure has structural members, at least one of which comprises an intermetallic compound. In making such a microstructure, a sacrificial material is employed. After completion of forming the structural layers, the sacrificial material is removed by a spontaneous vapor phase chemical etchant.

    Abstract translation: 本文公开了微结构及其制造方法。 微结构具有结构构件,其中至少一个包括金属间化合物。 在制造这样的微结构时,采用牺牲材料。 在完成形成结构层之后,牺牲材料通过自发气相化学腐蚀剂除去。

    Wafer dividing method
    43.
    发明申请
    Wafer dividing method 有权
    晶圆分割法

    公开(公告)号:US20060105546A1

    公开(公告)日:2006-05-18

    申请号:US11269548

    申请日:2005-11-09

    CPC classification number: B81C1/00888 B81C2201/053 H01L21/67132

    Abstract: A method of dividing a wafer having a plurality of micro electro mechanical systems and a plurality of streets for partitioning the micro electro mechanical systems formed on the front surface of a wafer substrate, the method comprising a protective tape affixing step for affixing a protective tape to the front surface of the wafer; a cut groove-forming step for forming a cut groove by cutting the wafer having the protective tape affixed thereto along the streets from the back surface of the wafer substrate, leaving a cutting margin having a predetermined thickness on the front surface side of the wafer substrate; and a cutting step for cutting the cutting margins by applying a laser beam to the cutting margins of the cut grooves formed along the streets.

    Abstract translation: 一种分割具有多个微电子机械系统的晶片和用于分割形成在晶片基板的前表面上的微机电系统的多个街道的方法,该方法包括用于将保护带固定的保护带固定步骤 晶片的前表面; 切割槽形成步骤,用于通过从晶片衬底的背面沿街道切割具有保护带的晶片来形成切割槽,在晶片衬底的前表面侧留下具有预定厚度的切割边缘 ; 以及切割步骤,通过将激光束施加到沿着街道形成的切割槽的切割边缘来切割切割边缘。

    Process for making microdevice with movable microplatform
    45.
    发明授权
    Process for making microdevice with movable microplatform 失效
    用可移动微平台制造微型装置的工艺

    公开(公告)号:US06849170B2

    公开(公告)日:2005-02-01

    申请号:US10353185

    申请日:2003-01-27

    Abstract: A process for making a microdevice that includes the steps of providing a base member and selectively electroforming a support member for supporting a microplatform with respect to the base member. The process also includes the steps of selectively electroforming the microplatform and forming a flexible hinge member for hingedly connecting the microplatform to the support member and allowing relative movement of the microplatform with respect to the support member. This microdevice, when compared to prior art devices, can have improved mechanical strength, rigidity, low deformation, and high planarity.

    Abstract translation: 一种用于制造微型装置的方法,包括以下步骤:提供基底构件并选择性地电铸相对于基底构件支撑微平台的支撑构件。 该方法还包括以下步骤:选择性地电铸微型平台并形成用于将微平台与支撑构件铰接连接并允许微平台相对于支撑构件相对运动的柔性铰链构件。 该微型装置与现有技术的装置相比可以具有改善的机械强度,刚性,低变形和高平面度。

    Method of fabricating an electrostatic vertical and torsional actuator using one single-crystalline silicon wafer
    48.
    发明授权
    Method of fabricating an electrostatic vertical and torsional actuator using one single-crystalline silicon wafer 有权
    使用一个单晶硅晶片制造静电垂直和扭转致动器的方法

    公开(公告)号:US06694504B2

    公开(公告)日:2004-02-17

    申请号:US10139720

    申请日:2002-05-06

    Abstract: The present invention, by improving the silicon surface/bulk micromachining technology using two steps of silicon etch mask patterning and four steps of silicon etching, fabricates a structure which has vertically offset electrodes and consequently fabricates an electrostatic vertical and torsional actuator using one single-crystalline silicon wafer. According to the method of the present invention, the problems of the prior art that used a number of silicon wafers and single/double SOI wafers, or combining of these wafers with additional deposited poly-crystalline silicon films, may be resolved.

    Abstract translation: 本发明通过使用两步硅蚀刻掩模图案化和四步硅蚀刻来改进硅表面/体微加工技术,制造了具有垂直偏移电极的结构,因此制造了使用一个单晶的静电垂直和扭转致动器 硅晶片。 根据本发明的方法,可以解决使用多个硅晶片和单/双SOI晶片的现有技术的问题,或者这些晶片与附加的沉积的多晶硅膜的组合。

    Microfabrication using germanium-based release masks
    49.
    发明授权
    Microfabrication using germanium-based release masks 有权
    使用锗基释放口罩进行微型加工

    公开(公告)号:US06440766B1

    公开(公告)日:2002-08-27

    申请号:US09612563

    申请日:2000-07-07

    Inventor: William A. Clark

    Abstract: A method of fabricating MicroElectroMechanical systems. The method includes: providing a substrate in which electrical interconnections and a sacrificial layer have been formed, forming a release mask including germanium, etching exposed sacrificial material, and removing the release mask. The performance of MicroElectroMechanical devices is improved by 1) integrating electronics on the same substrate as the mechanical elements, 2) increasing the proximity of electronics and mechanical elements, 3) increasing the undercut of a release etch to reduce or eliminate etch holes or to allow circuit elements to be undercut, 4) increasing the yield and reliability of the MEMS release processes. In addition to released mechanical structures, the invention also provides a means for forming circuits such as a bandgap reference as a released MEMS element. Forming a bandgap circuit as a released MEMS element may improve reference voltage performance by allowing resistive heating of the circuit region to a constant, elevated temperature independent of the substrate temperature.

    Abstract translation: 一种制造微电子机械系统的方法。 该方法包括:提供其中已经形成电互连和牺牲层的基板,形成包括锗的剥离掩模,蚀刻暴露的牺牲材料,以及去除释放掩模。 通过1)将电子器件与机械元件相同的衬底集成在一起,提高了微电子机电器件的性能,2)增加电子元件和机械元件的接近度,3)增加释放蚀刻的底切以减少或消除蚀刻孔或允许 电路元件被削弱,4)提高MEMS释放过程的产量和可靠性。 除了释放的机械结构之外,本发明还提供了用于形成诸如带隙基准之类的电路作为释放的MEMS元件的装置。 形成作为释放的MEMS元件的带隙电路可以通过允许电路区域的电阻加热到独立于衬底温度的恒定的升高的温度来提高参考电压性能。

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