公开(公告)号：US5905334A

公开(公告)日：1999-05-18

申请号：US686182

申请日：1996-07-23

Applicant: Osamu Nakamura ,  Shigemi Suzuki

Inventor： Osamu Nakamura ,  Shigemi Suzuki

IPC: H01J61/06 ,  G02F1/13357 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J17/06 ,  H01J31/12 ,  H01J61/067 ,  H01J61/00

CPC classification number: B82Y10/00 ,  H01J1/30 ,  H01J1/3042 ,  H01J61/0677 ,  H01J9/022 ,  H01J9/025 ,  G02F1/1336 ,  H01J2201/30446 ,  H01J2217/49271 ,  H01J2329/00 ,  H01J61/305 ,  H01J61/32 ,  H01J61/70 ,  H01J61/72

Abstract: A cold-cathode discharge device for emitting light. The device has a fluorescent tube and electrodes containing R.sub.2 O.sub.3-z (where R is an atom or an atom group of rare earth elements, O is oxygen, and z is 0.0 to 1.0). The electrodes are made by oxidation of the rare earth elements under an atmosphere in which oxygen and/or oxygen-containing substance is 1% or less by volume, in order to control the stoichiometry of the oxide.

Abstract translation: 一种用于发光的冷阴极放电装置。 该装置具有荧光管和含有R 2 O 3 -z的电极（其中R为稀土元素的原子或原子团，O为氧，z为0.0〜1.0）。 为了控制氧化物的化学计量，在氧和/或含氧物质为1体积％以下的气氛下，通过稀土元素的氧化来制造电极。

公开(公告)号：US5869169A

公开(公告)日：1999-02-09

申请号：US722490

申请日：1996-09-27

Applicant: Gary W. Jones

Inventor： Gary W. Jones

IPC: H01J1/304 ,  B32B7/02 ,  H01J1/02

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  Y10T428/2495

Abstract: A field emitter element comprising a bottom layer of material shaping the overall emitter element, and a top layer of low work function material or otherwise of high electron emissivity characteristic. The low work function top layer preferably is shaped to a sharp point. The bottom layer may be formed of a material such as tantalum, molybdenum, gold, or silicon (or alloys thereof), and the top layer may be formed of a material such as Cr.sub.3 Si, Cr.sub.3 Si.sub.2, CrSI.sub.2, Nb.sub.3 Si.sub.2, Nb, Cr.sub.2 O.sub.3 or SiC. In a specific aspect, at least one of the first and second emitter materials is chromium oxide (Cr.sub.2 O.sub.3). In another variant, the first emitter material is an insulator of leaky dielectric, e.g., SiO with a 10-60% Cr by weight based on the weight of SiO, and the second emitter material is SiO+50-90% Cr by weight, based on the weight of SiO.

Abstract translation: 场致发射体元件包括形成整个发射体元件的底层材料，以及低功函数材料的顶层或具有高电子发射率特性的顶层。 低功函数顶层优选成形为尖锐点。 底层可以由诸如钽，钼，金或硅（或其合金）的材料形成，并且顶层可以由诸如Cr 3 Si，Cr 3 Si 2，CrSi 2，Nb 3 Si 2，Nb，Cr 2 O 3或SiC的材料形成 。 在具体方面，第一和第二发射体材料中的至少一个是氧化铬（Cr 2 O 3）。 在另一个变型中，第一发射极材料是漏电介质的绝缘体，例如，以SiO的重量为基准的重量为10-60％的Cr的SiO，第二发射极材料为SiO + 50-90％Cr， 基于SiO的重量。

公开(公告)号：US5861707A

公开(公告)日：1999-01-19

申请号：US482584

申请日：1995-06-07

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/02 ,  H01J1/14

CPC classification number: H01J1/304 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: A field emitter including an exposed wide band gap emission area in contact with and protruding from a planar surface of a conductive metal, and a method of making is disclosed. Suitable wide band gap materials (2.5-7.0 electron-volts) include diamond, aluminum-nitride and gallium-nitride; suitable conductive metals include titanium, tungsten, gold and graphite. The method includes disposing the wide band gap material on a substrate, disposing the conductive metal on the wide band gap material, and etching the conductive metal to expose wide band gap emission areas. The emission areas are well suited for large area flat panel displays.

Abstract translation: 公开了一种包括与导电金属的平坦表面接触并从导电金属的平坦表面突出的暴露的宽带隙发射区域的场致发射体。 合适的宽带隙材料（2.5-7.0电子伏特）包括金刚石，氮化铝和氮化镓; 合适的导电金属包括钛，钨，金和石墨。 该方法包括将宽带隙材料设置在基板上，将导电金属设置在宽带隙材料上，蚀刻导电金属以暴露宽带隙发射区域。 发射区域非常适合大面积平板显示器。

公开(公告)号：US5851669A

公开(公告)日：1998-12-22

申请号：US446392

申请日：1995-05-22

Applicant: John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

Inventor： John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  D02C3/00

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/2973 ,  Y10T428/298

Abstract: A field-emission structure suitable for large-area flat-panel televisions centers around an insulating porous layer that overlies a lower conductive region situated over insulating material of a supporting substrate. Electron-emissive filaments occupy pores extending through the porous layer. A conductive gate layer through which openings extend at locations centered on the filaments typically overlies the porous layer. Cavities are usually provided in the porous layer along its upper surface at locations likewise centered on the filaments.

Abstract translation: 适用于大面积平板电视的场致发射结构围绕位于位于支撑衬底的绝缘材料上的下导电区域的绝缘多孔层的周围。 电子发射细丝占据贯穿多孔层的孔。 导电栅极层，通过该导电栅极层在多孔层上覆盖位于中心的位置处的开口延伸。 通常在多孔层中沿其上表面设置同样以细丝为中心的位置。

公开(公告)号：US5828163A

公开(公告)日：1998-10-27

申请号：US781289

申请日：1997-01-13

Applicant: Gary W. Jones ,  Susan K. Jones ,  Jeffrey Marino ,  Joseph K. Ho ,  R. Mark Boysel ,  Steven M. Zimmerman ,  Yachin Liu ,  Michael J. Costa ,  Jeffrey A. Silvernail

Inventor： Gary W. Jones ,  Susan K. Jones ,  Jeffrey Marino ,  Joseph K. Ho ,  R. Mark Boysel ,  Steven M. Zimmerman ,  Yachin Liu ,  Michael J. Costa ,  Jeffrey A. Silvernail

IPC: H01J1/304 ,  H01J1/02

CPC classification number: H01J1/3042 ,  H01J2201/319 ,  H01J2329/00

Abstract: A field emitter device includes a column conductor, an insulator, and a resistor structure for advantageously limiting current in a field emitter array. A wide column conductor is deposited on an insulating substrate. An insulator is laid over the column conductor. A high resistance layer is placed on the insulator and is physically isolated from the column conductor. The high resistance material may be chromium oxide or 10%-50% wt % Cr+SiO. A group of microtip electron emitters is placed over the high resistance layer. A low resistance strap interconnects the column conductor with the high resistance layer to connect in an electrical series circuit the column conductor, the high resistance layer, and the group of electron emitters. One or more layers of insulator and a gate electrode, all with cavities for the electron emitters, are laid over the high resistance material. One layer of insulator is selected from a group of materials including SiC, SiO, and Si.sub.3 N.sub.4. An anode plate is attached with intermediate space between the anode plate and the microtip electron emitters being evacuated.

Abstract translation: 场致发射器件包括列导体，绝缘体和电阻结构，用于有利地限制场发射器阵列中的电流。 在绝缘基板上沉积宽的列导体。 绝缘体放置在列导体上。 高电阻层被放置在绝缘体上并与柱导体物理隔离。 高电阻材料可以是氧化铬或10％-50％重量的Cr + SiO。 一组微尖端电子发射体放置在高电阻层上。 低电阻带将列导体与高电阻层互连，以连接列导体，高电阻层和电子发射体组的电串联电路。 一层或多层绝缘体和栅电极，全部具有用于电子发射体的空腔，铺设在高电阻材料上。 一层绝缘体选自包括SiC，SiO和Si 3 N 4的一组材料。 阳极板附接有阳极板和正在抽真空的微尖端电子发射体之间的中间空间。

公开(公告)号：US5786659A

公开(公告)日：1998-07-28

申请号：US350027

申请日：1994-11-29

Applicant: Toshinori Takagi ,  Masateru Taniguchi ,  Shigeo Itoh ,  Teruo Watanabe ,  Takahiro Niiyama

Inventor： Toshinori Takagi ,  Masateru Taniguchi ,  Shigeo Itoh ,  Teruo Watanabe ,  Takahiro Niiyama

IPC: H01J1/304 ,  H01J3/02 ,  H01J1/16

CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J2201/319

Abstract: A field emission type electron source capable of permitting a resistance value between a cathode wiring and each of emitter cones to be set at substantially the same level and increasing packaging density of the emitter cones. The electron source includes stripe-like cathode wirings arranged on an insulating substrate. The cathode wirings each are formed with a plurality of windows, so that a plurality of island-like cathode conductors and resistance layers different in resistance value from each other are formed separate from the cathode wiring. Then, a resistance layer, an insulating layer and a gate electrode are formed thereon. The gate electrode and insulating layer are formed with apertures in a manner to be common to both, in which the emitter cones are arranged, resulting in emission of electrons from the emitter cones of each group unit being rendered uniform.

Abstract translation: 能够使阴极配线和各个发射极锥体之间的电阻值设定在基本相同的水平并增加发射锥体的封装密度的场致发射型电子源。 电子源包括布置在绝缘基板上的条状阴极布线。 阴极布线各自形成有多个窗口，使得与阴极布线分离地形成彼此电阻值不同的多个岛状阴极导体和电阻层。 然后，在其上形成电阻层，绝缘层和栅电极。 栅极电极和绝缘层以其中布置发射极锥体的共同方式形成有孔，导致来自每个组单元的发射极锥体的电子发射均匀。

公开(公告)号：US5780318A

公开(公告)日：1998-07-14

申请号：US701866

申请日：1996-08-23

Applicant: Takayuki Hirano ,  Junji Itoh ,  Seigo Kanemaru

Inventor： Takayuki Hirano ,  Junji Itoh ,  Seigo Kanemaru

IPC: H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01L21/28 ,  H01L29/06

CPC classification number: H01J1/3042 ,  H01J9/025

Abstract: A cold electron emitting device has an emitter base portion, an emitter projection portion and a source region, each of which is an n-type semiconductor, formed on a p-type silicon substrate. A metal film which serves as an extraction electrode and a gate electrode of FET is formed via an insulating layer on the region of the substrate which includes the peripheral regions of the emitter base portion and source region. This cold electron emitting device can be manufactured as follows. First, a conical emitter having an emitter projection portion and emitter base portion and a source region are formed on a p-type semiconductor substrate. Next, an insulating layer and a metal film, which becomes an extraction electrode and a gate electrode of FET, is formed on the substrate which includes peripheral regions of the emitter base portion and source region. Then, an n-type impurity is doped in the emitter and the source region to form an n-type emitter and an n-type source region. In this manner, it is possible to manufacture a cold electron emitting device, which has an excellent work precision for the sharp tip of the emitter projection portion and an excellent uniform structure and can stably emit a current.

Abstract translation: 冷电子发射器件具有形成在p型硅衬底上的发射极基极部分，发射极突出部分和源极区域，每个都是n型半导体。 用作引出电极的金属膜和FET的栅极通过绝缘层在基板的包含发射极基部和源极区的外围区域的区域上形成。 该冷电子发射器件可以如下制造。 首先，在p型半导体基板上形成具有发射极投射部和发射极基部以及源极区的锥形发射体。 接下来，在包括发射极基部和源极区的周边区域的基板上形成作为FET的引出电极和栅电极的绝缘层和金属膜。 然后，在发射极和源极区域中掺杂n型杂质以形成n型发射极和n型源极区。 以这种方式，可以制造对于发射极突起部分的尖锐尖端具有优异的加工精度并且具有优异的均匀结构并且可以稳定地发射电流的冷电子发射器件。

公开(公告)号：US5773920A

公开(公告)日：1998-06-30

申请号：US498266

申请日：1995-07-03

Applicant: Jonathan L. Shaw ,  Kevin Jensen ,  Henry F. Gray

Inventor： Jonathan L. Shaw ,  Kevin Jensen ,  Henry F. Gray

IPC: H01J1/304 ,  H01L31/00

CPC classification number: H01J1/3042

Abstract: A field emitter is disclosed comprising a graded electron affinity surface ayer. The graded electron affinity layer provides for increased transconductance, reduced energy distribution of emitted electrons, reduced noise and increased uniformity in its operation.

Abstract translation: 公开了一种场发射器，其包括梯度电子亲和表面层。 分级电子亲和层提供增加的跨导，减少发射电子的能量分布，降低噪声和增加其操作的均匀性。

公开(公告)号：US5770919A

公开(公告)日：1998-06-23

申请号：US775843

申请日：1996-12-31

Applicant: Kevin Tjaden ,  David A. Cathey, Jr. ,  John K. Lee

Inventor： Kevin Tjaden ,  David A. Cathey, Jr. ,  John K. Lee

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/319 ,  H01J2329/00

Abstract: A micropoint assembly of a field emission device ("FED") including a baseplate, one or more conductors formed over the baseplate, and one or more micropoints formed over the conductor(s) is disclosed. The micropoint assembly further includes resistive structures associated with specific FED elements that limit current to a maximum level and minimize impact to remaining elements of the device. Any variation in resistivity is uniformly distributed since the same process is consistently applied across a plurality of element locations.

Abstract translation: 公开了一种包括基板，形成在基板上的一个或多个导体以及形成在导体上的一个或多个微点的场致发射器件（“FED”）的微点组件。 微点组件还包括与特定FED元件相关联的电阻结构，其将电流限制到最大水平并且最小化对器件的剩余元件的影响。 电阻率的任何变化是均匀分布的，因为相同的过程一贯地应用于多个元件位置。

公开(公告)号：US5717278A

公开(公告)日：1998-02-10

申请号：US445241

申请日：1995-05-19

Applicant: Johann Bartha ,  Johann Greschner ,  Volkhard Wolf

Inventor： Johann Bartha ,  Johann Greschner ,  Volkhard Wolf

IPC: H01J1/304 ,  H01J9/02 ,  H01J3/02 ,  H01J31/12

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30407

Abstract: The invention relates to the structure of a field emitter device, to the method of fabricating a field emitter device and to the use of the field emitter device in the technical field of flat panel displays. The field emission device comprises an array (1) of widely-spaced tips (2) for emitting electrons and a perforated extracting electrode (3) facing the array of tips. An individual series resistor is formed by each of said tips itself. The widely-spaced tips are not surrounded by a layer of electrically insulating material. The tips are not surrounded by an insulating layer and the tip end is not surrounded by a gate or extraction electrode. This avoids failures like shorts between the cathode electrode and the gate or extraction electrode which could occur due to inaccurate coating or etching processes, and enhances the reliability and the life-time of the array of tips. To fabricate the field emission device, a micromechanically manufactured array (1) of widely-spaced tips (2) and a micromechanically manufactured perforated extracting electrode (3) are provided. The outer sides of the perforated extracting electrode are bonded to the array in a way that the perforated extracting electrode is facing the array. With the array of widely-spaced tips and the perforated extracting electrode being fabricated separately and bonded together subsequently, both the number of process steps required for each of the two parts and the manufacturing process costs are reduced.

Abstract translation: 本发明涉及场致发射器件的结构，制造场发射极器件的方法以及在平板显示器的技术领域中使用场发射极器件。 场发射装置包括用于发射电子的广泛间隔的尖端（2）的阵列（1）和面向阵列阵列的穿孔提取电极（3）。 单个串联电阻器由每个所述尖端本身形成。 宽间隔的尖端不被一层电绝缘材料包围。 尖端不被绝缘层包围，并且尖端不被栅极或引出电极包围。 这避免了由于不准确的涂层或蚀刻工艺而可能发生的阴极电极和栅极或引出电极之间的短路故障，并且增强了尖端阵列的可靠性和寿命。 为了制造场发射器件，提供了一种微机械制造的宽间距尖端（2）的阵列（1）和微机械制造的穿孔提取电极（3）。 穿孔提取电极的外侧以穿孔提取电极面向阵列的方式结合到阵列。 利用广泛间隔的尖端阵列和穿孔提取电极单独制造并且随后结合在一起，减少了两个部件中的每一个所需的工艺步骤数量和制造工艺成本。