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    Controlling the characteristics of implanter ion-beams
    41.
    发明授权
    Controlling the characteristics of implanter ion-beams 有权
    控制注入离子束的特性

    公开(公告)号：US07351984B2

    公开(公告)日：2008-04-01

    申请号：US11784073

    申请日：2007-04-05

    Applicant: Kenneth H. Purser ,  Harald A. Enge ,  Norman L. Turner

    Inventor： Kenneth H. Purser ,  Harald A. Enge ,  Norman L. Turner

    IPC: H01J21/425

    CPC classification number: H01J37/141 ,  H01J37/14 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/315 ,  H01J37/3171 ,  H01J2237/141 ,  H01J2237/1534 ,  H01J2237/31703

    Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

    Abstract translation: 一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。 在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。 此外，该方法和装置可用于沿着光束线引入四极场。

    Diagnostic system for profiling micro-beams
    42.
    发明授权
    Diagnostic system for profiling micro-beams 失效
    微型射影诊断系统

    公开(公告)号：US07288772B2

    公开(公告)日：2007-10-30

    申请号：US11116697

    申请日：2005-04-27

    Applicant: John W. Elmer ,  Todd A. Palmer ,  Alan T. Teruya ,  Chris C. Walton

    Inventor： John W. Elmer ,  Todd A. Palmer ,  Alan T. Teruya ,  Chris C. Walton

    IPC: G01J1/00 ,  G03C5/00 ,  G01R13/00

    CPC classification number: H01J37/315 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/153 ,  H01J2237/30433 ,  H01J2237/317

    Abstract: An apparatus for characterization of a micro beam comprising a micro modified Faraday cup assembly including a first layer of material, a second layer of material operatively connected to the first layer of material, a third layer of material operatively connected to the second layer of material, and a fourth layer of material operatively connected to the third layer of material. The first layer of material comprises an electrical conducting material and has at least one first layer radial slit extending through the first layer. An electrical ground is connected to the first layer. The second layer of material comprises an insulating material and has at least one second layer radial slit corresponding to the first layer radial slit in the first layer of material. The second layer radial slit extends through the second layer. The third layer of material comprises a conducting material and has at least one third layer radial slit corresponding to the second layer radial slit in the second layer of material. The third layer radial slit extends through the third layer. The fourth layer of material comprises an electrical conducting material but does not have slits. An electrical measuring device is connected to the fourth layer. The micro modified Faraday cup assembly is positioned to be swept by the micro beam.

    Abstract translation: 一种用于表征微束的装置，包括微修改的法拉第杯组件，其包括第一材料层，可操作地连接到第一材料层的第二材料层，与第二材料层可操作地连接的第三层材料， 以及可操作地连接到第三层材料的第四层材料。 第一层材料包括导电材料，并且具有延伸穿过第一层的至少一个第一层径向狭缝。 电接地连接到第一层。 第二层材料包括绝缘材料，并且具有至少一个与第一层材料中的第一层径向狭缝相对应的第二层径向狭缝。 第二层径向狭缝延伸穿过第二层。 第三层材料包括导电材料，并且具有与第二层材料中的第二层径向狭缝相对应的至少一个第三层径向狭缝。 第三层径向狭缝延伸穿过第三层。 第四层材料包括导电材料，但不具有狭缝。 电测量装置连接到第四层。 微改装的法拉第杯组件定位成被微梁扫过。

    Electron beam welding method and apparatus
    43.
    发明申请
    Electron beam welding method and apparatus 审中-公开
    电子束焊接方法及装置

    公开(公告)号：US20060192144A1

    公开(公告)日：2006-08-31

    申请号：US11350184

    申请日：2006-02-07

    Applicant: Guenther Schubert ,  Steven Delong

    Inventor： Guenther Schubert ,  Steven Delong

    IPC: G21G5/00

    CPC classification number: H01J37/3045 ,  B23K10/00 ,  B23K15/0013 ,  B23K15/0046 ,  B23K15/02 ,  B23K15/06 ,  H01J37/305 ,  H01J37/315 ,  H01J2237/24405 ,  H01J2237/30472

    Abstract: An electron beam welding apparatus includes an electron beam generator for selectively emitting an electron beam into a weld chamber. The electron beam welding apparatus further includes a measuring device for detecting an intensity of the electron beam and a slit plate disposed between the electron beam generator and the measuring device. The slit plate permits passage of the electron beam through a slit formed in the slit plate, and the measuring device determines a location of the electron beam in dependence upon the detected intensity of the electron beam passing through the slit. The electron beam welding device further includes thermally non-conductive and/or absorbing materials strategically placed between parts to be welded and all components of mechanical assemblies requiring precision location.

    Abstract translation: 电子束焊接装置包括用于选择性地将电子束发射到焊接室中的电子束发生器。 电子束焊接装置还包括用于检测电子束的强度的测量装置和设置在电子束发生器和测量装置之间的狭缝板。 狭缝板允许电子束通过形成在狭缝板中的狭缝，并且测量装置根据检测到的通过狭缝的电子束的强度来确定电子束的位置。 电子束焊接装置还包括策略地放置在待焊接部件和需要精密定位的机械组件的所有部件之间的热不导电和/或吸收材料。

    Diagnostic system for profiling micro-beams
    44.
    发明申请
    Diagnostic system for profiling micro-beams 失效
    微型射影诊断系统

    公开(公告)号：US20050242299A1

    公开(公告)日：2005-11-03

    申请号：US11116697

    申请日：2005-04-27

    Applicant: John Elmer ,  Todd Palmer ,  Alan Teruya ,  Chris Walton

    Inventor： John Elmer ,  Todd Palmer ,  Alan Teruya ,  Chris Walton

    IPC: G01J1/00 ,  G01R19/00 ,  G03C5/00 ,  H01J37/304 ,  H01J37/305 ,  H01J37/315

    CPC classification number: H01J37/315 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/153 ,  H01J2237/30433 ,  H01J2237/317

    Abstract: An apparatus for characterization of a micro beam comprising a micro modified Faraday cup assembly including a first layer of material, a second layer of material operatively connected to the first layer of material, a third layer of material operatively connected to the second layer of material, and a fourth layer of material operatively connected to the third layer of material. The first layer of material comprises an electrical conducting material and has at least one first layer radial slit extending through the first layer. An electrical ground is connected to the first layer. The second layer of material comprises an insulating material and has at least one second layer radial slit corresponding to the first layer radial slit in the first layer of material. The second layer radial slit extends through the second layer. The third layer of material comprises a conducting material and has at least one third layer radial slit corresponding to the second layer radial slit in the second layer of material. The third layer radial slit extends through the third layer. The fourth layer of material comprises an electrical conducting material but does not have slits. An electrical measuring device is connected to the fourth layer. The micro modified Faraday cup assembly is positioned to be swept by the micro beam.

    Abstract translation: 一种用于表征微束的装置，包括微修改的法拉第杯组件，其包括第一材料层，可操作地连接到第一材料层的第二材料层，与第二材料层可操作地连接的第三层材料， 以及可操作地连接到第三层材料的第四层材料。 第一层材料包括导电材料，并且具有延伸穿过第一层的至少一个第一层径向狭缝。 电接地连接到第一层。 第二层材料包括绝缘材料，并且具有至少一个与第一层材料中的第一层径向狭缝相对应的第二层径向狭缝。 第二层径向狭缝延伸穿过第二层。 第三层材料包括导电材料，并且具有与第二层材料中的第二层径向狭缝相对应的至少一个第三层径向狭缝。 第三层径向狭缝延伸穿过第三层。 第四层材料包括导电材料，但不具有狭缝。 电测量装置连接到第四层。 微改装的法拉第杯组件定位成被微梁扫过。

    Spatter-free electron beam welding apparatus with spatter catching device associated therewith
    46.
    发明授权
    Spatter-free electron beam welding apparatus with spatter catching device associated therewith 失效
    无飞溅电子束焊接设备，具有与之相关联的飞溅捕捉装置

    公开(公告)号：US5075532A

    公开(公告)日：1991-12-24

    申请号：US540333

    申请日：1990-06-19

    Applicant: Masaru Wakabayashi

    Inventor： Masaru Wakabayashi

    IPC: B23K15/00 ,  B23K15/06 ,  H01J37/30 ,  H01J37/315

    CPC classification number: H01J37/3002 ,  B23K15/0026 ,  B23K15/06 ,  H01J37/315 ,  H01J2237/022 ,  H01J2237/3104

    Abstract: An electron beam welding apparatus performs electron welding by irradiating electron beam on a workpiece. At an arcing point where the electron beam is irradiated, welding spatter is generated. The welding spatter can fly in a working chamber and can adhere to a housing of a welding apparatus. For preventing this, a spatter catching means is provided for preventing the welding spatter from directly adhering to the peripheral wall surface of the housing. Preferably, a spatter catching means comprises a cover member surrounding the workpiece so that the area of flying of the welding spatter is limited within the surrounded region.

    Abstract translation: 电子束焊接装置通过在工件上照射电子束来进行电子焊接。 在电子束照射的电弧点，产生焊接飞溅。 焊接飞溅物可以在工作室内飞行，并且可以粘附到焊接设备的壳体上。 为了防止这种情况，提供了用于防止焊接飞溅物直接附着到壳体的周壁表面的飞溅捕捉装置。 优选地，飞溅捕捉装置包括围绕工件的盖构件，使得焊接飞溅的飞行区域被限制在被包围的区域内。

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