Abstract:
A scanning electron microscope device for a sample to be detected and an electron beam inspection apparatus are provided, the scanning electron microscope device being configured to project electron beam to a surface of the sample to generate backscattered electrons and secondary electrons, and comprising: an electron beam source, a deflection mechanism, and an objective lens assembly. The deflection mechanism comprises a first deflector located downstream the electron beam source and a second deflector located downstream the first deflector. The objective lens assembly comprises: an excitation coil; and a magnetic yoke, formed by a magnetizer material as a housing which opens towards the sample and comprising a hollow body defining an internal chamber where the excitation coil is accommodated, and at least one inclined portion extending inward from the hollow body at an angle with reference to the hollow body and directing towards the optical axis, with an end of the at least one inclined portion being formed into a pole piece. The deflection mechanism further comprises a compensation electrode, which is located between the pole piece and the surface of the sample and is configured to adjust a focusing position of the electron beam at which the electron beam is focused, in a condition of excitation thereof with a voltage being applied thereon, by adjusting the voltage.
Abstract:
An object is to provide a multipole unit capable of achieving both high positional accuracy and ease of assembling and preventing a decrease in the transmission rate of the magnetic flux. A multipole unit 109a includes a pole 1 that is made of a soft magnetic metal material, a shaft 2 that is made of a soft magnetic metal material and is magnetically connected to the pole, and a coil 3 that is wound around the shaft 2. The pole 1 is provided with a first fitting portion JP1 that forms a first recessed portion or a first protruding portion. The shaft 2 is provided with a second fitting portion JP2 that forms a second protruding portion or a second recessed portion. The first fitting portion JP1 and the second fitting portion JP2 are fitted with each other such that the pole 1 and the shaft 2 are physically separated from each other.
Abstract:
A beam deflector includes a magnetic-flux-guiding structure which has an opening through which a beam axis extends, and at least two coils arranged at the magnetic-flux-guiding structure so that they produce a magnetic field B1 having lines passing through the two coils in succession, leave the magnetic-flux-guiding structure at a first location on a first side in relation to the beam axis, cross the beam axis at a second location which is arranged at a distance along the beam axis from the magnetic-flux-guiding structure, re-enter into the magnetic flux-guiding structure at a third location on a second side lying opposite the first side, and extend around the opening from the third location to the first location within the magnetic-flux-guiding structure.
Abstract:
An objective lens arrangement includes a first, second and third pole pieces, each being substantially rotationally symmetric. The first, second and third pole pieces are disposed on a same side of an object plane. An end of the first pole piece is separated from an end of the second pole piece to form a first gap, and an end of the third pole piece is separated from an end of the second pole piece to form a second gap. A first excitation coil generates a focusing magnetic field in the first gap, and a second excitation coil generates a compensating magnetic field in the second gap. First and second power supplies supply current to the first and second excitation coils, respectively. A magnetic flux generated in the second pole piece is oriented in a same direction as a magnetic flux generated in the second pole piece.
Abstract:
A new apparatus of plural charged particle beams with multi-axis magnetic lenses is provided, which comprises a plurality of sub-columns The apparatus employs two modified multi-axis magnetic lenses, and magnetic sub-lenses thereof therefore function as the objective lenses and the condenser lenses of all the sub-columns respectively. The plurality of sub-columns can perform the same function or different functions required for observing a surface of a specimen, such as high-throughput inspection and high-resolution review of interested features thereon. Accordingly, the apparatus can be used as a yield management tool in semiconductor manufacturing industry.
Abstract:
An apparatus of plural charged particle beams with multi-axis magnetic lens is provided to perform multi-functions of observing a specimen surface, such as high-throughput inspection and high-resolution review of interested features thereof and charge-up control for enhancing image contrast and image resolution. In the apparatus, two or more sub-columns are formed and each of the sub-columns performs one of the multi-functions. Basically the sub-columns take normal illumination to get high image resolutions, but one or more may take oblique illuminations to get high image contrasts.
Abstract:
A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
Abstract:
Multipole coils (1, 2, 3, 4, 5, 6) for influencing particle beams have at least two coils (1, 2) which concentrically enclose an imaginary axis (10), wherein a winding (7) made from a flexible circuit board (8) is formed by means of conducting paths (9) disposed thereon for each coil (1, 2, 3, 4, 5, 6) and the circuit boards (8) are rolled into at least one circuit board layer (11, 12, 13, 14). Multipole coils of this kind (1, 2, 3, 4, 5, 6) are utilized for aberration correction in particle optics, wherein the windings (7) of the multipole coils (1, 2, 3, 4, 5, 6) form windows (16) whose width in the peripheral direction is chosen in such a fashion that no secondary interfering fields occur and whose length in the axial direction corresponds at least to its width.
Abstract:
A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.
Abstract:
A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.