公开(公告)号：US06796268B2

公开(公告)日：2004-09-28

申请号：US09776675

申请日：2001-02-06

Applicant: Nobuo Ishii

Inventor： Nobuo Ishii

IPC: C23C1600

CPC classification number: H01J37/32211 ,  H01J37/32192

Abstract: On the top wall of a processing vessel 1 of a plasma processing system, a transmission window 10 capable of transmitting microwaves is provided. On the top of the transmission window 10, a microwave antenna 2 is mounted. Microwaves are supplied from a microwave supply source 3 to the antenna 2 through a connecting waveguide 4. The antenna 2 has two ring-shaped antenna waveguides 5a and 5b which are substantially concentrically arranged. Each of the antenna waveguides 5a and 5b comprises a rectangular waveguide having a bottom wall in which a plurality of slots 6a and 6b are formed at intervals, and the proximal end portion of each of the antenna waveguides 5a and 5b is connected to the connecting waveguide 4. The proximal end portions 7a and 7b of the antenna waveguides 5a and 5b are provided with control gates 9a and 9b for varying the size of apertures, respectively.

Abstract translation: 在等离子体处理系统的处理容器1的顶壁上设置能够传送微波的透射窗10。 在传输窗口10的顶部安装微波天线2。 微波通过连接波导4从微波供应源3提供给天线2.天线2具有基本上同心布置的两个环形天线波导5a和5b。 天线波导5a和5b中的每一个包括一个矩形波导，该矩形波导具有一个其中多个槽6a和6b间隔地形成的底壁，并且每个天线波导5a和5b的基端部分连接到连接波导 天线波导5a和5b的近端部分7a和7b分别设置有用于改变孔径尺寸的控制门9a和9b。

公开(公告)号：US20040035530A1

公开(公告)日：2004-02-26

申请号：US10250907

申请日：2003-07-08

Inventor： Hachishiro IIzuka

IPC: H01L021/306

CPC classification number: H01L21/67017 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/4583 ,  C23C16/4586 ,  H01J37/32192 ,  H01J37/32211

Abstract: A processing unit of the invention is a single wafer processing unit including: a processing container that can be vacuumed; a stage arranged in the processing container, on which an object to be processed can be placed; a discharging pipe connected to a bottom part of the processing container and extending substantially downward linearly; a vacuum pump directly connected to the discharging pipe; and a stage-supporting pillar arranged to extend in a substantially central portion of the discharging pipe and in a direction of the discharging pipe, the stage-supporting pillar supporting the stage.

Abstract translation: 本发明的处理单元是单晶片处理单元，其包括：可被抽真空的处理容器; 布置在处理容器中的能够放置待处理物体的台阶; 排出管，其连接到处理容器的底部并且基本上向下线性延伸; 直接连接到排放管的真空泵; 以及台架支柱，其设置成在排出管的大致中央部分和排出管的方向上延伸，支撑台支撑支柱。

公开(公告)号：US20030024647A1

公开(公告)日：2003-02-06

申请号：US10211498

申请日：2002-08-02

Inventor： Takamitsu Tadera ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC: H01L021/306 ,  C23F001/00 ,  C23C016/00

CPC classification number: H01J37/32211 ,  H01J37/32192 ,  H01J37/32266

Abstract: A plasma processing apparatus includes a slot plate having a slot-formed region for passing microwave from a waveguide to a microwave entrance window, and a slot plate drive unit driving the slot plate to change the position of the slot plate with respect to the microwave entrance window. The slot plate is thus moved with respect to the microwave entrance window to change at least one of the position, number and area of slot openings where the microwave is passed. The plasma processing apparatus accordingly ensures uniform plasma processing even if the process condition significantly changes when films on a large-area substrate or wafer to be processed are made of different materials or a stacked-layer film composed of layers of different materials is to be processed.

Abstract translation: 等离子体处理装置包括：槽板，其具有用于将微波从波导传递到微波入口窗口的槽形区域;以及槽板驱动单元，其驱动槽板以改变槽板相对于微波入口的位置 窗口。 狭缝板因此相对于微波入口窗移动，以改变微波通过的槽口的位置，数量和面积中的至少一个。 因此，等离子体处理装置即使在待处理的大面积基板或晶片上的膜由不同的材料制成或由不同材料的层构成的叠层膜将被处理时，即使处理条件显着变化，也能确保均匀的等离子体处理 。

公开(公告)号：US20010011525A1

公开(公告)日：2001-08-09

申请号：US09776675

申请日：2001-02-06

Applicant:

Inventor： Nobuo Ishii

IPC: C23C016/511 ,  H01L021/3065

CPC classification number: H01J37/32211 ,  H01J37/32192

Abstract: On the top wall of a processing vessel 1 of a plasma processing system, a transmission window 10 capable of transmitting microwaves is provided. On the top of the transmission window 10, a microwave antenna 2 is mounted. Microwaves are supplied from a microwave supply source 3 to the antenna 2 through a connecting waveguide 4. The antenna 2 has two ring-shaped antenna waveguides 5a and 5b which are substantially concentrically arranged. Each of the antenna waveguides 5a and 5b comprises a rectangular waveguide having a bottom wall in which a plurality of slots 6a and 6b are formed at intervals, and the proximal end portion of each of the antenna waveguides 5a and 5b is connected to the connecting waveguide 4. The proximal end portions 7a and 7b of the antenna waveguides 5a and 5b are provided with control gates 9a and 9b for varying the size of apertures, respectively.

Abstract translation: 在等离子体处理系统的处理容器1的顶壁上设置能够传送微波的透射窗10。 在传输窗口10的顶部安装微波天线2。 微波通过连接波导4从微波供应源3提供给天线2.天线2具有基本上同心布置的两个环形天线波导5a和5b。 天线波导5a和5b中的每一个包括一个矩形波导，该矩形波导具有一个其中多个槽6a和6b间隔地形成的底壁，并且每个天线波导5a和5b的基端部分连接到连接波导 天线波导5a和5b的近端部分7a和7b分别设置有用于改变孔径尺寸的控制门9a和9b。

公开(公告)号：US5788798A

公开(公告)日：1998-08-04

申请号：US605216

申请日：1996-05-31

Applicant: Hiroshi Mabuchi ,  Takahiro Yoshiki ,  Naoki Matsumoto ,  Kyoichi Komachi ,  Shuta Kanayama ,  Toshiki Ebata

Inventor： Hiroshi Mabuchi ,  Takahiro Yoshiki ,  Naoki Matsumoto ,  Kyoichi Komachi ,  Shuta Kanayama ,  Toshiki Ebata

IPC: H01J37/32 ,  H01L21/00

CPC classification number: H01J37/32211 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/32238

Abstract: A plasma processing apparatus carries out plasma processings such as etching, ashing and CVD on large substrates such as semiconductor device substrates and glass substrates for liquid crystal display panels, etc. The plasma processing apparatus having microwave generator 26, a microwave guide path 23, a microwave window 4 and a reaction room 2, etc., has a dielectric sheet 21 disposed to confront the microwave window 4 through a hollow area 20. The dielectric sheet is divided into multiple dielectric sheets 21a, 21b, and the microwave guide path 23a, 23b are connected to the divided dielectric sheets 21a, 21b. This simple structure enables the stable and uniform plasma processing on large substrates such as glass substrates for liquid crystal display panels.

Abstract translation: PCT No.PCT / JP95 / 01403 Sec。 371日期：1996年5月31日 102（e）日期1996年5月31日PCT提交1995年7月13日PCT公布。 第WO96 / 03019号公报 日期1996年2月1日等离子体处理装置在诸如半导体器件基板和用于液晶显示面板的玻璃基板等大型基板上进行蚀刻，灰化和CVD等等离子体处理。具有微波发生器26，微波 引导路径23，微波窗4和反应室2等具有设置成通过中空区域20面对微波窗口4的电介质片21.电介质片被分成多个电介质片21a，21b， 微波引导路径23a，23b连接到分隔电介质片21a，21b。 这种简单的结构能够在诸如液晶显示面板的玻璃基板等大基板上进行稳定均匀的等离子体处理。

公开(公告)号：US5556475A

公开(公告)日：1996-09-17

申请号：US72272

申请日：1993-06-04

Applicant: Matthew M. Besen ,  Evelio Sevillano ,  Donald K. Smith

Inventor： Matthew M. Besen ,  Evelio Sevillano ,  Donald K. Smith

IPC: C23C16/511 ,  H01J37/32 ,  C23C16/00

CPC classification number: H01J37/32211 ,  C23C16/511 ,  H01J37/32192

Abstract: A microwave plasma reactor including a chamber for containing a gas to be energized into a plasma with microwave energy, an electrode having two surfaces in the chamber for radiating microwave energy from one of the surfaces into the chamber to form the plasma proximate the radiating surface, and a waveguide or coaxial conductor for introducing microwave energy onto the other of the two electrode surfaces for providing the energy to form the plasma.

Abstract translation: 一种微波等离子体反应器，包括：用于将微波能量供给等离子体的气体容纳在腔室中的电极，所述室具有用于将微波能量从所述表面中的一个辐射到所述腔室中的两个表面，以形成靠近所述辐射表面的等离子体， 以及用于将微波能量引入到两个电极表面中的另一个上以提供形成等离子体的能量的波导或同轴导体。

公开(公告)号：US5389154A

公开(公告)日：1995-02-14

申请号：US81934

申请日：1993-06-24

Applicant: Nishimura Hiroshi ,  Ono Toshiro ,  Matsuo Seitaro

Inventor： Nishimura Hiroshi ,  Ono Toshiro ,  Matsuo Seitaro

IPC: H01J37/32 ,  C23C16/50

CPC classification number: H01J37/32211 ,  H01J37/32192 ,  H01J37/32238 ,  H01J37/32623 ,  H01J37/32678

Abstract: In a plasma processing apparatus, a second microwave guiding unit has at least one vacuum waveguide with a dielectric window and an opening being formed on the side of the microwave introducing hole. The vacuum waveguide is arranged at a position where an external magnetic field applied from an external magnetic field applying unit is stronger than an ECR condition, and causes the microwave guided from a first microwave guiding unit to propagate through the dielectric window in a direction perpendicular to the external magnetic field such that the electric field of the microwave is parallel to the external magnetic field applied to the second microwave guiding unit by the external magnetic field applying unit. The dielectric window is arranged at a position at which at least a portion of the dielectric window cannot been seen directly from the microwave introducing hole. The propagating direction of the microwave is changed at a position immediately above the plasma chamber, at which the external magnetic field strength is higher than the ECR condition, thereby introducing, through the opening, the microwave to the microwave introducing hole along the external magnetic field, whereby converting a raw material in the plasma chamber into plasma by electron cyclotron resonance (ECR).

Abstract translation: 在等离子体处理装置中，第二微波引导单元具有至少一个具有电介质窗口的真空波导和在微波导入孔一侧形成的开口。 真空波导布置在从外部磁场施加单元施加的外部磁场比ECR状态更强的位置，并且使从第一微波引导单元引导的微波沿着垂直于...的方向传播通过电介质窗口 外部磁场使得微波的电场平行于通过外部磁场施加单元施加到第二微波引导单元的外部磁场。 电介质窗设置在电介质窗口的至少一部分不能直接从微波导入孔看到的位置。 微波的传播方向在外部磁场强度高于ECR条件的等离子体室正上方的位置改变，从而通过开口将微波沿外部磁场引入微波导入孔 ，由此通过电子回旋共振（ECR）将等离子体室中的原料转化为等离子体。

公开(公告)号：US12125679B2

公开(公告)日：2024-10-22

申请号：US17951579

申请日：2022-09-23

Applicant: Tokyo Electron Limited

Inventor： Chishio Koshimizu ,  Gen Tamamushi ,  Masahiro Inoue ,  Yuto Kosaka ,  Shoichiro Matsuyama

IPC: H01J37/00 ,  H01J37/32

CPC classification number: H01J37/32211 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/3244

Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided in the chamber; a bias power supply that supplies an electrical bias energy to an electrode of the substrate support; a matching box including a matching circuit; a radio-frequency power supply that supplies a radio-frequency power having a variable frequency into the chamber through the matching box, and adjusts the frequency of the radio-frequency power in each of a plurality of phase periods within the cycle of the electrical bias energy; a sensor that detects an electrical signal reflecting a deviation of a load impedance of the radio-frequency power supply from a matching state; and a filter that generates a filtered signal by removing and an intermodulation distortion component of the radio-frequency power and the electrical bias energy from the electrical signal in each of the plurality of phase periods.

公开(公告)号：US11972930B2

公开(公告)日：2024-04-30

申请号：US17542781

申请日：2021-12-06

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Toan Tran ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/32293 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32229 ,  H01J37/32935 ,  H01J2237/334

Abstract: A plasma reactor has a cylindrical microwave cavity overlying a workpiece processing chamber, a microwave source having a pair of microwave source outputs, and a pair of respective waveguides. The cavity has first and second input ports in a sidewall and space apart by an azimuthal angle. Each of the waveguides has a microwave input end coupled to a microwave source output and a microwave output end coupled to a respective one of the first and second input ports, a coupling aperture plate at the output end with a rectangular coupling aperture in the coupling aperture plate, and an iris plate between the coupling aperture plate and the microwave input end with a rectangular iris opening in the iris plate.

公开(公告)号：US20170125219A1

公开(公告)日：2017-05-04

申请号：US15180425

申请日：2016-06-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Toan Tran ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/32293 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32229 ,  H01J37/32935 ,  H01J2237/334

Abstract: A rotating microwave is established for any resonant mode TEmnl or TMmnl of a cavity, where the user is free to choose the values of the mode indices m, n and 1. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference ΔØ and the azimuthal angle Δθ between two microwave input ports P and Q as functions of m, n and 1. The slow rotation of frequency Ωα (typically 1-1000 Hz), is established by transforming dual field inputs α cos Ωαt and ±α sin Ωαt in the orthogonal input system into an oblique system defined by the angle Δθ between two microwave ports P and Q.