公开(公告)号：US20230383403A1

公开(公告)日：2023-11-30

申请号：US18446564

申请日：2023-08-09

Applicant: Taiwan Semiconductor Manufacturing Co, Ltd.

Inventor： Tze-Liang Lee ,  Po-Hsien Cheng

IPC: C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45536 ,  H01J37/32522 ,  C23C16/45565 ,  H01J2237/2002 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/332 ,  H01J37/32211

Abstract: A deposition apparatus and a method are provided. A method includes placing a substrate over a platform in a chamber of a deposition system. A precursor material is introduced into the chamber. A first gas curtain is generated in front of a first electromagnetic (EM) radiation source coupled to the chamber. A plasma is generated from the precursor material in the chamber, wherein the plasma comprises dissociated components of the precursor material. The plasma is subjected to a first EM radiation from the first EM radiation source. The first EM radiation further dissociates the precursor material. A layer is deposited over the substrate. The layer includes a reaction product of the dissociated components of the precursor material.

公开(公告)号：US09887081B2

公开(公告)日：2018-02-06

申请号：US15380955

申请日：2016-12-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Junya Miyahara ,  Yutaka Fujino ,  Genji Nakamura ,  Kentaro Shiraga

IPC: H01L21/02 ,  H01L21/687 ,  C23C16/40 ,  H01J37/32 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/02236 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/56 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/32247 ,  H01J37/32256 ,  H01J37/32311 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/02304 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/28255 ,  H01L21/687

Abstract: A method for manufacturing an insulating film laminated structure includes a step of forming a first high-k film on a semiconductor substrate, a step of processing the semiconductor substrate in a processing chamber of a plasma processing apparatus by using a plasma to form an oxide film on an interface between the semiconductor substrate and the first high-k film, and a step of forming a second high-k film on the first high-k film. A plasma oxidation process is performed by using a plasma of an oxygen-containing gas at a processing temperature of the semiconductor substrate in a range from 20° C. to 145° C. while setting a power density of a total power of microwaves to be within a range from 0.035 kW/m2 to 3.5 kW/m2 with respect to a total area of a conductive member facing an inner space of the processing chamber and microwave transmitting windows.

公开(公告)号：US20150015139A1

公开(公告)日：2015-01-15

申请号：US14326649

申请日：2014-07-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazushi KANEKO ,  Toshihiko IWAO ,  Satoru KAWAKAMI

IPC: H01J37/32

CPC classification number: H01J37/32311 ,  H01J37/244 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32238 ,  H01J37/32266 ,  H01J37/32935 ,  H01J37/3299

Abstract: A microwave plasma processing apparatus includes a processing space; a microwave generator which generates microwaves for generating a plasma; a distributor which distributes the microwaves to a plurality of waveguides; an antenna installed in a processing container to seal the processing space and to radiate microwaves distributed by the distributor, to the processing space; and a monitor unit configured to monitor a voltage of each of the plurality of waveguides. A control unit acquires a control value of a distribution ratio of the distributor, which corresponds to a difference between a voltage monitor value of the monitor unit and a predetermined voltage reference value, from a storage unit that stores the difference and the control value corresponding to each other. The control unit is also configured to control the distribution ratio of the distributor, based on the acquired control value.

Abstract translation: 微波等离子体处理装置包括处理空间; 产生产生等离子体的微波的微波发生器; 将微波分配到多个波导的分配器; 安装在处理容器中以密封处理空间并辐射由分配器分布的微波的天线到处理空间; 以及监视器单元，被配置为监视所述多个波导中的每一个的电压。 控制单元从存储该差异的存储单元和对应于该监视单元的控制值获取对应于监视单元的电压监视值和预定电压基准值之间的差异的分配器的分配比率的控制值 彼此。 控制单元还被配置为基于所获取的控制值来控制分配器的分配比。

公开(公告)号：US20140262041A1

公开(公告)日：2014-09-18

申请号：US14204840

申请日：2014-03-11

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen ,  Toshihiko Iwao ,  Toshihisa Nozawa ,  Zhiying Chen ,  Peter Ventzek

IPC: H01J37/32

CPC classification number: H01J37/32229 ,  H01J37/32211 ,  H01J37/32238 ,  H01L21/67017 ,  H01L21/67069

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

公开(公告)号：US20140251955A1

公开(公告)日：2014-09-11

申请号：US14159499

申请日：2014-01-21

Applicant: NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY ,  TOKYO ELECTRON LIMITED

Inventor： Hitoshi Itoh ,  Yusuke Kubota ,  Hirotaka Toyoda ,  Masaru Hori

IPC: H01J37/32

CPC classification number: H01J37/32229 ,  H01J37/32211

Abstract: A microwave waveguide apparatus for generating plasma includes a waveguide which has first and second ends and propagates microwave from input end such that the microwave propagates from the first end to the second end, a circulator device having a first port, a second port coupled to the first end, and a third port coupled to the second end, the circulator device being structured such that the microwave is received at the first port, propagates from the second port to the first end, is received at the third port from the second end and is returned toward the input end, and a matching device which is interposed between the input end and the circulator device and reflects part of the microwave received at the third port and returned toward the input end to the first port. The waveguide has a slot-hole extending along the microwave propagation direction in the waveguide.

Abstract translation: 用于产生等离子体的微波波导装置包括波导，该波导具有第一和第二端并且从输入端传播微波，使得微波从第一端传播到第二端;环行器装置，具有第一端口，第二端口耦合到 第一端和耦合到第二端的第三端口，循环器装置被构造成使得微波在第一端口处被接收，从第二端口传播到第一端，从第二端接收在第三端口处， 并且反映在输入端和环行器装置之间的匹配装置，并且反射接收在第三端口处的微波的一部分并且朝着输入端返回到第一端口。 波导具有沿波导的微波传播方向延伸的槽孔。

公开(公告)号：US20130302992A1

公开(公告)日：2013-11-14

申请号：US13885708

申请日：2011-11-16

Applicant: Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

Inventor： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3244

Abstract: An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

Abstract translation: 一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一 第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。 来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

公开(公告)号：US08222125B2

公开(公告)日：2012-07-17

申请号：US12855637

申请日：2010-08-12

Applicant: Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

Inventor： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

IPC: H01L21/20 ,  H01L21/205 ,  C23C16/00 ,  C23C16/24 ,  C23C16/50 ,  C23C16/511

CPC classification number: H01L31/03767 ,  C23C16/24 ,  C23C16/452 ,  H01J37/32211 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/3277 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/028 ,  H01L31/065 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

Abstract translation: 微波等离子体沉积薄膜光伏材料的设备和方法。 该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的沉积。 该装置包括带有通过其的导管的微波施加器，其携带沉积物质。 施加器将微波能量传递到沉积物质以将它们转变成有助于形成薄膜材料的反应状态。 导管物理隔离在微波功率传递点反应以形成薄膜材料的沉积物质。 沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。 本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

公开(公告)号：US20120040492A1

公开(公告)日：2012-02-16

申请号：US12855637

申请日：2010-08-12

Applicant: Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

Inventor： Stanford R. Ovshinsky ,  David Strand ,  Patrick Klersy ,  Boil Pashmakov

IPC: H01L31/18

CPC classification number: H01L31/03767 ,  C23C16/24 ,  C23C16/452 ,  H01J37/32211 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/3277 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/028 ,  H01L31/065 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids unintended deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to activate or energize them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react or otherwise combine to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. Suitable deposition species include precursors that contain silicon, germanium, fluorine, and/or hydrogen. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

Abstract translation: 微波等离子体沉积薄膜光伏材料的设备和方法。 该装置避免了将微波能量耦合到沉积物质的窗户或其他微波传输元件上的非预期沉积。 该装置包括带有通过其的导管的微波施加器，其携带沉积物质。 施加器将微波能量传递到沉积物质以激活或激发它们到有助于形成薄膜材料的反应状态。 导管物理地隔离在微波功率传递的点处将反应或以其他方式组合以形成薄膜材料的沉积物质。 沉积物质分开通电并从功率传递点扫除，以防止薄膜沉积。 合适的沉积物质包括含有硅，锗，氟和/或氢的前体。 本发明允许超快速地形成显示高迁移率，低孔隙率，很少或没有Staebler-Wronski降解和低缺陷浓度的含硅非晶半导体。

公开(公告)号：US08048329B2

公开(公告)日：2011-11-01

申请号：US12504525

申请日：2009-07-16

Applicant: Mohammad Kamarehi ,  Ing-Yann Albert Wang

Inventor： Mohammad Kamarehi ,  Ing-Yann Albert Wang

IPC: H01J27/00

CPC classification number: H05H1/46 ,  H01J37/32211 ,  H01J37/32357

Abstract: A method for minimizing microwave leakage into processing chamber of a microwave plasma system is provided. The method includes securing plasma traps to a plasma tube assembly, which is a cylindrical structure positioned upstream from the processing chamber and has a plasma-sustaining region. The plasma traps are electrically conductive disks surrounding the cylindrical structure and are positioned upstream from the processing chamber. The plasma traps include at least two electrically conductive disks. Each electrically conductive disk includes corrugated outer surfaces with plurality of corrugated peaks. The corrugated outer surface of the first electrically conductive disk is facing a corrugated outer surface of the second electrically conductive disk in a space-apart relationship to form an interstitial region between the electrically conductive disks. Both electrically conductive disk and the interstitial region form one of a set of upstream plasma traps and a set of downstream plasma traps relative to the plasma-sustaining region.

Abstract translation: 提供了一种使微波泄漏到微波等离子体系统的处理室中的方法。 该方法包括将等离子体捕集阱固定到等离子体管组件，等离子体管组件是位于处理室上游的具有等离子体维持区域的圆柱形结构。 等离子体捕集器是围绕圆柱形结构并且位于处理室的上游的导电盘。 等离子体捕集器包括至少两个导电盘。 每个导电盘包括具有多个波纹峰的波纹状外表面。 第一导电盘的波纹状外表面以空间分开的关系面对第二导电盘的波纹状外表面，以形成导电盘之间的间隙区。 导电盘和间隙区形成一组上游等离子体捕集器和相对于等离子体维持区域的一组下游等离子体阱。

公开(公告)号：US20110121736A1

公开(公告)日：2011-05-26

申请号：US12997180

申请日：2009-06-03

Applicant: Masaki Hirayama ,  Tadahiro Ohmi

Inventor： Masaki Hirayama ,  Tadahiro Ohmi

IPC: H05H1/24

CPC classification number: H01J37/32211 ,  H01J37/32192 ,  H01J37/32229

Abstract: Provided is a plasma processing apparatus having a coaxial waveguide structure in which characteristic impedance of an input side and characteristic impedance of an output side are different. A microwave plasma processing apparatus, which plasma-processes a substrate by exciting a gas by using a microwave, includes: a processing container; a microwave source, which outputs a microwave, a first coaxial waveguide, which transmits the microwave output from the microwave source; and a dielectric plate, which is adjacent to the first coaxial waveguide while facing an inner side of the processing container, and emits the microwave transmitted from the first coaxial waveguide into the processing container. A thickness ratio between an inner conductor and an outer conductor of the first coaxial waveguide is not uniform along a longitudinal direction.

Abstract translation: 提供了一种等离子体处理装置，其具有输入侧的特性阻抗和输出侧的特性阻抗不同的同轴波导结构。 微波等离子体处理装置，其通过使用微波对气体进行等离子体处理，包括：处理容器; 输出微波的微波源，从微波源传输微波输出的第一同轴波导; 以及电介质板，其与第一同轴波导相邻，同时面向处理容器的内侧，并且将从第一同轴波导传输的微波发射到处理容器中。 第一同轴波导管的内导体和外导体之间的厚度比在纵向方向上不均匀。