公开(公告)号：US12249486B2

公开(公告)日：2025-03-11

申请号：US18392239

申请日：2023-12-21

Applicant: Tokyo Electron Limited

Inventor： Chishio Koshimizu

IPC: H01J37/32

Abstract: In a plasma processing apparatus, a radio-frequency power supply adjusts frequencies of radio-frequency power in each bias cycle of electrical bias energy. The radio-frequency power supply uses a reference time series of frequencies of the radio-frequency power in each bias cycle. The radio-frequency power supply repeats using a changed time series of frequencies of the radio-frequency power in each bias cycle to increase a degree of match based on an evaluation value. The changed time series results from shifting the reference time series by a phase shift amount, scaling the reference time series in a frequency direction, or scaling two or more of multiple time zones of the reference time series in a time direction.

公开(公告)号：US11764034B2

公开(公告)日：2023-09-19

申请号：US16878098

申请日：2020-05-19

Applicant: Tokyo Electron Limited

Inventor： Chishio Koshimizu ,  Shin Hirotsu ,  Takenobu Ikeda ,  Koichi Nagami ,  Shinji Himori

IPC: H01J37/32 ,  H05H1/00 ,  H01H1/46

CPC classification number: H01J37/32183 ,  H01H1/46 ,  H01J37/32568 ,  H01J37/32715 ,  H05H1/01

Abstract: A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

公开(公告)号：US11742184B2

公开(公告)日：2023-08-29

申请号：US17176300

申请日：2021-02-16

Applicant: Tokyo Electron Limited

Inventor： Chishio Koshimizu

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32715

Abstract: The disclosed plasma processing apparatus includes a plasma processing chamber, a substrate support, a bias power source, and a radio frequency power source. The substrate support is disposed in the plasma processing chamber and includes an electrode. The bias power source is coupled to the electrode and configured to generate a bias power having a first frequency. The radio frequency power source is coupled to the plasma processing chamber and configured to generate a radio frequency power having a second frequency higher than the first frequency. The radio frequency power has a first power level in a first period within one cycle of the bias power and has a second power level lower than the first power level in a second period within one cycle of the bias power.

公开(公告)号：US11742183B2

公开(公告)日：2023-08-29

申请号：US17531348

申请日：2021-11-19

Applicant: Tokyo Electron Limited

Inventor： Ryuji Hisatomi ,  Chishio Koshimizu ,  Michishige Saito

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32146 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32724 ,  H01J37/32467 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/32651 ,  H01J2237/002 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6833

Abstract: A plasma processing apparatus includes: a processing container; an electrode that places a substrate thereon within the processing container; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies bias power to the electrode; a part exposed to the plasma in the processing container; a DC power supply that supplies a DC voltage to the part; a controller that executes a process including a first control procedure in which a first state in which the DC voltage has a first voltage value and a second state in which the DC voltage has a second voltage value higher than the first voltage value are periodically repeated, and the first voltage value is applied in a partial period in each cycle of a potential of the electrode, and the second voltage value is applied such that the first state and the second state are continuous.

公开(公告)号：US11742180B2

公开(公告)日：2023-08-29

申请号：US16919650

申请日：2020-07-02

Applicant: Tokyo Electron Limited

Inventor： Chishio Koshimizu

IPC: H01L21/00 ,  H01J37/32 ,  H01J37/248

CPC classification number: H01J37/32082 ,  H01J37/248 ,  H01J37/32568

Abstract: A plasma processing method according to an exemplary embodiment includes preparing a substrate in a chamber of a plasma processing apparatus. The substrate is disposed on a substrate support in the chamber. The substrate support includes a lower electrode and an electrostatic chuck. The electrostatic chuck is provided on the lower electrode. The plasma processing method further includes applying a positive voltage to a conductive member when plasma is being generated in the chamber for plasma processing on the substrate. The conductive member extends closer to a grounded side wall of the chamber than the substrate.

公开(公告)号：US11446714B2

公开(公告)日：2022-09-20

申请号：US15715482

申请日：2017-09-26

Applicant: Tokyo Electron Limited

Inventor： Kazuya Dobashi ,  Chishio Koshimizu

IPC: H01J37/32 ,  B08B7/00 ,  H01L21/02 ,  H01L21/311 ,  B08B5/00 ,  H01L21/67

Abstract: Disclosed is a processing apparatus for performing a processing on a workpiece using gas clusters. The processing apparatus includes: a processing container in which the workpiece is disposed, and an inside of which is maintained in a vacuum state; an exhaust mechanism that exhausts an atmosphere in the processing container; a gas supply unit that supplies a gas containing a cluster generating gas; a cluster nozzle provided in the processing container and configured to generate gas clusters by adiabatically expanding the cluster generating gas and inject a gas component containing the generated gas clusters into the processing container; and a plasma generating mechanism that generates plasma in the cluster nozzle portion. The gas clusters are ionized by the plasma generated in the cluster nozzle portion, and the ionized gas clusters are injected from the cluster nozzle and irradiated onto the workpiece, so that a predetermined processing is performed.

公开(公告)号：US11443920B2

公开(公告)日：2022-09-13

申请号：US16730861

申请日：2019-12-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun Yamawaku ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a plasma generation unit for converting a processing gas into plasma by an inductive coupling. The plasma generation unit includes a first high frequency antenna formed of a vortex coil having open opposite ends and, at a central portion of a line between the open ends, a supply point of a high frequency power and a grounding point grounded through a capacitor; a second high frequency antenna formed of a planar vortex coil disposed between first and second high frequency antenna elements of the first high frequency antenna; and an impedance adjustment unit for adjusting a resonant frequency of a circuit viewed from a high frequency power supply toward the first high frequency antenna which is configured to have two resonant frequencies depending on adjustment of the impedance adjustment unit when the frequency of the high frequency power is changed.

公开(公告)号：US10854431B2

公开(公告)日：2020-12-01

申请号：US16708856

申请日：2019-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Yoshinobu Ohya ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

公开(公告)号：US09899191B2

公开(公告)日：2018-02-20

申请号：US14250783

申请日：2014-04-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

公开(公告)号：US09607866B2

公开(公告)日：2017-03-28

申请号：US13932567

申请日：2013-07-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Naoki Matsumoto ,  Chishio Koshimizu ,  Akira Koshiishi

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  C23F4/00 ,  H01J37/32

CPC classification number: H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.