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    Selective control of discharge position in gas discharge display/memory device
    41.
    发明授权
    Selective control of discharge position in gas discharge display/memory device 失效
    气体放电显示/记忆装置中放电位置的选择性控制

    公开(公告)号：US3823394A

    公开(公告)日：1974-07-09

    申请号：US26710272

    申请日：1972-06-28

    Applicant: OWENS ILLINOIS INC

    Inventor： BYRUM B ,  ERNSTHAUSEN R

    IPC: H01J11/12 ,  H01J61/92 ,  H01J17/04

    CPC classification number: H01J11/12 ,  H01J2211/38

    Abstract: There is disclosed a gas discharge display/memory device wherein the discharge is selectively controlled for various advantages, particularly increased light output and panel brightness. The device is characterized by an ionizable gaseous medium in a thin gas chamber between a pair of opposed dielectric charge storage members, each dielectric member being backed by an array of electrodes with each array being appropriately oriented relative to the other array so as to form a multiplicity of gas discharge cells. Both opposing dielectric charge storage surfaces of each cell are coated with a first layer of low electron yield material and a second layer of high electron yield material - in the geometric form of dots, lines, etc., - the second layer being appropriately positioned such that it is surrounded by the first layer of low electron yield material and such that two opposing surfaces of high electron yield material at or near a discharge cell site cause the cell discharge to occur at the pair of opposing surfaces of high electron yield material. The relative position of the high electron yield material surfaces can be utilized to maximize the visible light output from the panel. The Townsend''s (gamma) second coefficient of the high electron yield material is at least 1.5 times the Townsend''s second coefficient of the low electron yield material.

    Abstract translation: 公开了一种气体放电显示/存储装置，其中放电被选择性地控制，用于各种优点，特别是增加的光输出和面板亮度。 该装置的特征在于在一对相对的介电电荷存储部件之间的薄气体室中的可离子化气体介质，每个电介质构件由电极阵列支撑，每个阵列相对于另一个阵列被适当地取向，以形成 气体放电单元的多重性。 每个电池的两个相对的电介质电荷储存表面涂覆有第一层低电子产生材料和第二层高电子产生材料 - 以点，线等的几何形式 - 第二层被适当地定位成 它被第一层低电子产生材料包围，并且使得在放电单元位置处或附近的高电子产生材料的两个相对表面导致在高电子产生材料的一对相对表面处发生电池放电。 可以利用高电子产生材料表面的相对位置来最大化来自面板的可见光输出。 Townsend（γ）第二系数的高电子产量材料至少是Townsend的第二个低电子产量系数的1.5倍。

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