Optical metrology system and method employing laser-server supplying laser energy to distributed slave metrology heads
    51.
    发明申请
    Optical metrology system and method employing laser-server supplying laser energy to distributed slave metrology heads 有权
    光学计量系统和方法采用激光服务器为分布式计量头提供激光能量

    公开(公告)号:US20020030825A1

    公开(公告)日:2002-03-14

    申请号:US09750996

    申请日:2000-12-29

    Inventor: R. Gregory Wolf

    CPC classification number: G01B11/00

    Abstract: A metrology system has one or more central nullmetrology serversnull and one or more nullmetrology slavesnull The server delivers metrology nullpump/probenull signals to multiple slave systems allowing a reduction in the number of high-cost metrology components in the master system. In certain cases, multiple metrology components in the nullmasternull system may provide redundancy while still maintaining a beneficial cost benefit. Reliability can also be improved by using multiple lasers and multiple delay paths with a cross-point switch between them. If one sub-system goes down, the system may nullserializenull metrology operations and thereby maintain all systems running, although at somewhat of a reduced throughput. An important element of this invention is grouping all or most of the costly components in a centralized laser server, and issuing pump-probe pulse pairs to remote metrology heads through a light pipe or other conveyance, such as optical fiber. The remote metrology heads can thus be reduced in cost and complexity.

    Abstract translation: 测量系统具有一个或多个中央“计量服务器”和一个或多个“计量从站”服务器将测量“泵/探测”信号提供给多个从系统,从而可以减少主系统中高成本度量部件的数量 在某些情况下,“主”系统中的多个测量组件可能提供冗余,同时仍然保持有益的成本效益。 还可以通过使用多个激光器和多个延迟路径与它们之间的交叉点开关来提高可靠性。 如果一个子系统出现故障,则系统可以“串行化”计量操作,从而维持所有系统的运行,尽管在某种程度上降低了吞吐量。本发明的一个重要因素是将集中式激光器中的所有或大部分昂贵的组件分组 服务器,并通过诸如光纤之类的光管或其它传送装置向远程计量头发出泵浦 - 探针脉冲对,从而可以降低远程计量头的成本和复杂性。

    WAFER CRACK DETECTION
    52.
    发明申请

    公开(公告)号:US20200225278A1

    公开(公告)日:2020-07-16

    申请号:US16744621

    申请日:2020-01-16

    Inventor: Hartmut SEEGER

    Abstract: A method for identifying cracks in non-planar substrates is herein disclosed. Images of a substrate in a relaxed state are captured and assessed to identify cracks, if any. Assessment may be conducted optically using broad band illumination, laser illumination, or infrared illumination. Mechanisms for carrying out the method are also disclosed.

    Calibration of semiconductor metrology systems

    公开(公告)号:US10173249B2

    公开(公告)日:2019-01-08

    申请号:US14881847

    申请日:2015-10-13

    Abstract: A method of cleaning calibration and other substrates that improves the correlation of measurements from calibration and product substrates and increases the useful life of the calibration substrates is herein disclosed. By exposing a calibration substrate to ultraviolet light, a reaction is triggered that results in the cleaning of the contaminants from the calibration substrate. For instance, monatomic oxygen is introduced to contaminants on the surface of a calibration substrate to remove the contaminants without inducing modifications in the substrate itself. Through the cleaning process, the temperature of the calibration substrate may be controlled to limit adverse effects caused by the overheating of the calibration substrate.

    System and method of characterizing micro-fabrication processes

    公开(公告)号:US09658169B2

    公开(公告)日:2017-05-23

    申请号:US14213451

    申请日:2014-03-14

    CPC classification number: G01N21/8803 G01N21/88

    Abstract: A system for assessing a structure and the tools and processes used to form the structure is described. 2D images of the structure are captured and processed to obtain 3D information concerning the structure. Both 2D and 3D information is then used to identify and analyze selected characteristics of the structure. This analysis allows for a quality assessment of the structure. The selected characteristics are correlated with information relating to the operation of the tool that carried out the process that at least in part created the structure. The correlation of tool/process information to structure characteristics allows for the generation of feedback that may be used to modify the tool or processed used to form the structure.

    Planar motor system with increased efficiency

    公开(公告)号:US09625832B2

    公开(公告)日:2017-04-18

    申请号:US14432912

    申请日:2013-09-27

    Abstract: A planar motor system comprises a platen with a first planar motor component and a stage with a second planar motor component. The stage can move along a first cardinal axis or a second cardinal axis. The planar motor system further comprises a drive system. When the drive system is energized in a first drive configuration, it applies a first force and a second force. The first force and the second force are not parallel to any cardinal axis. A vector sum of the first force and the second force is parallel to the first cardinal axis. When the drive system is energized in a second drive configuration, it applies a third force and a fourth force. The third force and the fourth force are not parallel to any cardinal axis. A vector sum of the third force and the fourth force is parallel to the second cardinal axis.

    System for directly measuring the depth of a high aspect ratio etched feature on a wafer
    59.
    发明授权
    System for directly measuring the depth of a high aspect ratio etched feature on a wafer 有权
    用于直接测量晶片上的高纵横比蚀刻特征的深度的系统

    公开(公告)号:US09587932B2

    公开(公告)日:2017-03-07

    申请号:US15142864

    申请日:2016-04-29

    CPC classification number: G01B11/22 G01B11/0633 G01B11/0675 G01B2210/56

    Abstract: A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).

    Abstract translation: 一种用于直接测量包括蚀刻表面(82)和非蚀刻表面(84)的晶片(80)上的高纵横比蚀刻特征的深度的系统(10)。 系统(10)利用红外反射计(12),在优选实施例中,扫描激光器(14),光纤循环器(16),光电检测器(22)和组合准直仪(18)和物镜(20) )。 从物镜(20),产生被施加到晶片(80)的未蚀刻表面(84)的聚焦入射光(23)。 从晶片(80)产生的反射光(25)通过反射计(12)处理并被施加到产生相应的数字数据信号(29)的ADC(24)。 数字数据信号(29)被应用于与软件(32)组合的计算机(30),其测量在显示器(34)上被观看的蚀刻特征的深度。

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