公开(公告)号：US20230070199A1

公开(公告)日：2023-03-09

申请号：US17902957

申请日：2022-09-05

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart

IPC: C23C16/455 ,  C23C16/36 ,  C23C16/56 ,  C23C16/04

Abstract: A topology-selective deposition method is disclosed. An exemplary method includes depositing a first layer of material overlying a gap or feature on a substrate surface, depositing a second layer of material overlying the first layer of material, and selectively removing the first layer of material.

公开(公告)号：US20220293463A1

公开(公告)日：2022-09-15

申请号：US17680607

申请日：2022-02-25

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart ,  Viljami Pore ,  Giuseppe Alessio Verni ,  Qi Xie ,  Ren-Jie Chang ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/02

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The method then comprises subjecting the gap filling fluid to a transformation treatment, thus forming a transformed material in the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220285146A1

公开(公告)日：2022-09-08

申请号：US17680761

申请日：2022-02-25

Applicant: ASM IP Holding B.V.

Inventor： Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Qi Xie ,  Timothee Blanquart ,  Eric Shero

IPC: H01L21/02 ,  H01L27/108

Abstract: Disclosed are methods and systems for depositing layers comprising a metal and nitrogen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

公开(公告)号：US20220122841A1

公开(公告)日：2022-04-21

申请号：US17451280

申请日：2021-10-18

Applicant: ASM IP HOLDING B.V.

Inventor： Timothee Blanquart ,  Takahiro Onuma ,  Shinya Yoshimoto ,  Charles Dezelah ,  Jihee Jeon

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34

Abstract: Methods and systems for manufacturing a structure comprising a substrate are provided herein. In some embodiments, the substrate comprises a plurality of recesses. The recesses may be at least partially filled with a gap filling fluid. The gap filling fluid may comprise an Si—N bond.

公开(公告)号：US20210013037A1

公开(公告)日：2021-01-14

申请号：US16922520

申请日：2020-07-07

Applicant: ASM IP Holding B.V.

Inventor： Yiting Sun ,  David de Roest ,  Daniele Piumi ,  Ivo Johannes Raaijmakers ,  BokHeon Kim ,  Timothee Blanquart ,  Yoann Tomczak

IPC: H01L21/033 ,  H01L21/311 ,  G03F7/20 ,  G03F7/38

Abstract: Methods of forming structures including a photoresist underlayer and structures including the photoresist underlayer are disclosed. Exemplary methods include forming the photoresist underlayer using one or more of plasma-enhanced cyclic (e.g., atomic layer) deposition and plasma-enhanced chemical vapor deposition. Surface properties of the photoresist underlayer can be manipulated using a treatment process.

公开(公告)号：US20210005449A1

公开(公告)日：2021-01-07

申请号：US17024092

申请日：2020-09-17

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  David de Roest

IPC: H01L21/02 ,  H01L21/033

Abstract: The invention relates to a method of providing a structure by depositing a layer on a substrate in a reactor. The method comprising: introducing a silicon halide precursor in the reactor; introducing a reactant gas comprising oxygen in the reactor; and, providing an energy source to create a plasma from the reactant gas so that the oxygen reacts with the first precursor in a layer comprising silicon dioxide.