公开(公告)号：US20090221150A1

公开(公告)日：2009-09-03

申请号：US12395465

申请日：2009-02-27

Applicant: Edward P. Hammond, IV ,  Jing Zou ,  Rodolfo P. Belen ,  Meihua Shen ,  Nicolas Gani ,  Andrew Nguyen ,  David Palagashvili ,  Michael D. Willwerth

Inventor： Edward P. Hammond, IV ,  Jing Zou ,  Rodolfo P. Belen ,  Meihua Shen ,  Nicolas Gani ,  Andrew Nguyen ,  David Palagashvili ,  Michael D. Willwerth

IPC: H01L21/3065 ,  C23F1/08

CPC classification number: H01J37/32642 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32623 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/68735

Abstract: A method and apparatus are provided for plasma etching a substrate in a processing chamber. A focus ring assembly circumscribes a substrate support, providing uniform processing conditions near the edge of the substrate. The focus ring assembly comprises two rings, a first ring and a second ring, the first ring comprising quartz, and the second ring comprising monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or combinations thereof. The second ring is disposed above the first ring near the edge of the substrate, and creates a uniform electric field and gas composition above the edge of the substrate that results in uniform etching across the substrate surface.

Abstract translation: 提供了一种用于等离子体蚀刻处理室中的衬底的方法和装置。 聚焦环组件围绕衬底支撑件，在衬底的边缘附近提供均匀的加工条件。 聚焦环组件包括两个环，第一环和第二环，第一环包括石英，第二环包括单晶硅，碳化硅，氮化硅，碳氧化硅，氮氧化硅或其组合。 第二环设置在基板边缘附近的第一环上方，并且在衬底的边缘上方产生均匀的电场和气体组成，导致穿过衬底表面的均匀蚀刻。

公开(公告)号：US07510453B2

公开(公告)日：2009-03-31

申请号：US11841665

申请日：2007-08-20

Applicant: Andrew Nguyen

Inventor： Andrew Nguyen

IPC: A63B31/08

CPC classification number: A63B31/11

Abstract: A swimming aid device comprising of a convertible bi/mono swim fin containing a first fin, a second fin and coupling means. The present invention can be used as traditional independent swim fins or combined together to form a bi-swim fin in which both swim fins are held together to aid the swimmer in performing feet unison-style swim kicks such as a dolphin kick.In one embodiment, the coupling means consists of a track and rail in which a track is attached to a first fin and a rail is attached to a second fin. Said track of the first fin has an inner groove that can slidably receive the rail of the second fin.The swimming aid device further comprising a locking means for selective locking of the rail to the groove so that once the rail is slidably and fully received within said groove, said locking means prevents further relative sliding movement between said rail and said groove.

Abstract translation: 一种游泳辅助装置，包括一个包含第一鳍片，第二鳍片和耦合装置的可转换双/单排鳍片。 本发明可以用作传统的独立游泳翅片或组合在一起以形成双鱼翅，其中两个游翅均被保持在一起，以帮助游泳者执行诸如海豚踢的同步游泳。 在一个实施例中，联接装置由轨道和轨道组成，其中轨道连接到第一鳍片，轨道连接到第二鳍片。 所述第一翅片的轨道具有能够滑动地接收第二翅片的轨道的内凹槽。 游泳辅助装置还包括锁定装置，用于将轨道选择性地锁定到凹槽，使得一旦轨道被可滑动地且完全地容纳在所述槽内，则所述锁定装置防止在所述轨道和所述凹槽之间的进一步的相对滑动运动。

公开(公告)号：US20090025878A1

公开(公告)日：2009-01-29

申请号：US11828568

申请日：2007-07-26

Applicant: Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

Inventor： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

IPC: H01L21/306

CPC classification number: H01J37/16 ,  H01J37/20 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32697 ,  H01J37/32834

Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

Abstract translation: 通过提供旁路电流流动路径，RF接地回流电流从反应室的不对称特征转向。 一个旁路电流流动路径避免了室底部中的泵送端口，并且包括从侧壁延伸到接地基座的导电对称格栅。 另一个旁路电流流动路径避免了晶片狭缝阀，并且包括桥接由狭缝阀占据的侧壁部分的导电带阵列。

公开(公告)号：US20080257261A1

公开(公告)日：2008-10-23

申请号：US11738505

申请日：2007-04-22

Applicant: Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horiaka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger Alan Lindley ,  Hong S. Yang

Inventor： Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horiaka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger Alan Lindley ,  Hong S. Yang

IPC: H05H1/00

CPC classification number: H01J37/3266 ,  H01J37/32623

Abstract: Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.

Abstract translation: 本发明的实施例涉及等离子体处理装置及其使用方法。 在一些实施例中，等离子体控制磁体组件包括以预定图案布置的多个磁体，其在靠近组件的区域中产生强度大于10高斯的磁场，并且在远离组件的区域中小于10高斯。

公开(公告)号：US20080179181A1

公开(公告)日：2008-07-31

申请号：US11733984

申请日：2007-04-11

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H05H1/00

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

Abstract: A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.

Abstract translation: 用于在等离子体反应器室中处理工件的方法包括通过室的电极之一将RFF功率以第一VHF频率f 1耦合到等离子体，并且提供用于RF电流的中心接地返回路径，其直接通过天花板电极 工件支撑电极为频率f 1。 该方法还包括提供可变高度边缘接地环形元件，并为频率f 1提供通过边缘接地环形元件的接地返回路径。 该方法通过控制可变高度边缘接地环形元件之间的距离和（a）天花板电极的高度或（b）工件支撑电极的高度来控制等离子体离子密度分布的均匀性。

公开(公告)号：US20080179008A1

公开(公告)日：2008-07-31

申请号：US11685772

申请日：2007-03-14

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: H01L21/306

CPC classification number: H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

Abstract: A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon, so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. A lower external plasma-generating chamber introduces a plasma by-product into the lower process zone and a supply of a polymer etch precursor gas coupled to the lower external plasma-generating chamber. An upper external plasma-generating chamber is coupled to introduce a plasma by-product into the upper process zone and a supply of a scavenger species precursor gas coupled to the upper external plasma-generating chamber.

Abstract translation: 提供反应器用于从工件的背面去除聚合物。 反应器包括具有天花板，地板和圆柱形侧壁的真空室。 室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面向天花板。 支撑装置离开被暴露的工件的背面的至少一个环形周边。 约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上加工区和下加工区之间划分腔室的边界 。 真空泵联接到下部处理区。 较低的外部等离子体发生室将等离子体副产物引入下部工艺区域中，并且提供耦合到下部外部等离子体产生室的聚合物蚀刻前体气体。 耦合上部外部等离子体产生室以将等离子体副产物引入上部工艺区域中，并且供应与上部外部等离子体产生室耦合的清除剂物质前体气体。

公开(公告)号：US20080110567A1

公开(公告)日：2008-05-15

申请号：US11751575

申请日：2007-05-21

Applicant: Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

Inventor： Matthew L. Miller ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Michael Kutney ,  James Carducci ,  Andrew Nguyen

IPC: H01L21/306

CPC classification number: H01J37/32633 ,  H01J37/3244 ,  H01J37/32449

Abstract: A plasma reactor with plasma confinement and plasma radial distribution capability. The reactor comprises a reactor chamber including a side wall and a workpiece support pedestal in the chamber and defining a pumping annulus between the pedestal and side wall and a pumping port at a bottom of the pumping annulus. The reactor further comprises a means for confining gas flow in an axial direction through the pumping annulus to prevent plasma from flowing to the pumping port. The reactor further comprises a means for compensating for asymmetry of gas flow pattern across the pedestal arising from placement of the pumping port. The reactor further comprises a means for controlling plasma distribution having an inherent tendency to promote edge-high plasma density distribution. The means for confining gas flow is depressed below the workpiece support sufficiently to compensate for the edge-high plasma distribution tendency of the means for controlling plasma distribution.

Abstract translation: 一种具有等离子体约束和等离子体径向分布能力的等离子体反应器。 该反应器包括反应室，该反应室包括室中的侧壁和工件支撑基座，并且在基座和侧壁之间限定了泵送环形空间以及在泵送环空的底部的泵送端口。 反应器还包括用于将气流沿轴向限制通过泵送环的装置，以防止等离子体流到泵送端口。 所述反应器还包括用于补偿穿过所述基座的由所述泵送端口的放置产生的气流图案的不对称性的装置。 反应器还包括用于控制具有促进边缘 - 高等离子体密度分布的固有倾向的等离子体分布的装置。 用于限制气流的装置在工件支撑下方被压下，足以补偿用于控制等离子体分布的装置的边缘 - 高等离子体分布趋势。

公开(公告)号：US20080044960A1

公开(公告)日：2008-02-21

申请号：US11901969

申请日：2007-09-18

Applicant: Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

Inventor： Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC: H01L21/84

CPC classification number: H01J37/321 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/78618

Abstract: A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.

Abstract translation: 通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积 然后可以加热以将掺杂剂驱动到晶体管中。 一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

公开(公告)号：US07320734B2

公开(公告)日：2008-01-22

申请号：US10646527

申请日：2003-08-22

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC: C23C16/00 ,  C23F1/00

CPC classification number: H01J37/32082 ,  H01J37/321

Abstract: A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region, and a first hollow conduit outside the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across the process region. The reactor further includes a gas distribution apparatus on or near an interior surface of the reactor for introducing a process gas containing a first species to be ion implanted into a surface layer of the workpiece, and a first RF plasma source power applicator for generating a plasma in the chamber. The system further includes a second wafer processing apparatus and a wafer transfer apparatus for transferring the workpiece between the plasma immersion implantation rector and the second wafer processing apparatus.

Abstract translation: 一种用于处理工件的系统包括具有外壳的等离子体浸入式离子注入反应器，所述外壳具有侧壁和天花板并且限定室，并且所述室内的工件支撑基座具有面向天花板的工件支撑表面，并且限定延伸 通常横跨晶片支撑台座并且由侧壁横向限制并且轴向地在工件支撑台座和天花板之间。 外壳在工艺区域的大致相对侧具有至少第一对开口，腔室外的第一中空导管具有连接到第一对开口中的相应开口的第一端和第二端，以便提供第一凹槽 路径延伸穿过管道并跨越过程区域。 反应器还包括在反应器的内表面上或附近的气体分配装置，用于将含有待离子注入的第一种类的工艺气体引入到工件的表面层中;以及第一RF等离子体源功率施加器，用于产生等离子体 在房间里 该系统还包括第二晶片处理装置和晶片传送装置，用于在等离子浸入植入装置和第二晶片处理装置之间传送工件。

公开(公告)号：US07312148B2

公开(公告)日：2007-12-25

申请号：US11199570

申请日：2005-08-08

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H01L21/44

CPC classification number: H01L21/76877 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873

Abstract: A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.

Abstract translation: 在半导体衬底上形成用于薄膜结构的阻挡层的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层 纵横比开口，包括垂直侧壁，并且在第一阻挡层上沉积包含阻挡金属的金属阻挡层。 该方法还包括通过（a）将来自连续波激光阵列的光引导到至少部分穿过薄膜结构延伸的光线中来回流金属阻挡层，以及（b）相对于薄的平移光线 薄膜结构在横向于光线的方向上。