公开(公告)号：US10378107B2

公开(公告)日：2019-08-13

申请号：US14850816

申请日：2015-09-10

Applicant: Lam Research Corporation

Inventor： Ramesh Chandrasekharan ,  Saangrut Sangplung ,  Shankar Swaminathan ,  Frank Pasquale ,  Hu Kang ,  Adrien LaVoie ,  Edward Augustyniak ,  Yukinori Sakiyama ,  Chloe Baldasseroni ,  Seshasayee Varadarajan ,  Basha Sajjad ,  Jennifer L. Petraglia

IPC: C23C16/50 ,  C23C16/52 ,  H01J37/32 ,  C23C16/455

Abstract: A showerhead in a semiconductor processing apparatus can include faceplate through-holes configured to improve the flow uniformity during atomic layer deposition. The showerhead can include a faceplate having a plurality of through-holes for distributing gas onto a substrate, where the faceplate includes small diameter through-holes. For example, the diameter of each of the through-holes can be less than about 0.04 inches. In addition or in the alternative, the showerhead can include edge through-holes positioned circumferentially along a ring having a diameter greater than a diameter of the substrate being processed. The showerhead can be a low volume showerhead and can include a baffle proximate one or more gas inlets in communication with a plenum volume of the showerhead. The faceplate with small diameter through-holes and/or edge through-holes can improve overall film non-uniformity, improve azimuthal film non-uniformity at the edge of the substrate, and enable operation at higher RF powers.

公开(公告)号：US10323323B2

公开(公告)日：2019-06-18

申请号：US15453263

申请日：2017-03-08

Applicant: LAM RESEARCH CORPORATION

Inventor： Ramesh Chandrasekharan ,  Jennifer O'Loughlin ,  Saangrut Sangplung ,  Shankar Swaminathan ,  Frank Pasquale ,  Chloe Baldasseroni ,  Adrien LaVoie

IPC: C23C16/52 ,  C23C16/455 ,  H01J37/32 ,  C23C16/44

Abstract: A gas delivery system includes a first valve including an inlet that communicates with a first gas source. A first inlet of a second valve communicates with an outlet of the first valve and a second inlet of the second valve communicates with a second gas source. An inlet of a third valve communicates with a third gas source. A connector includes a first gas channel and a cylinder defining a second gas channel. The cylinder and the first gas channel collectively define a flow channel between an outer surface of the cylinder and an inner surface of the first gas channel. The flow channel communicates with the outlet of the third valve and the first end of the second gas channel. A third gas channel communicates with the second gas channel, with the outlet of the second valve and with a gas distribution device of a processing chamber.

公开(公告)号：US10128116B2

公开(公告)日：2018-11-13

申请号：US15593187

申请日：2017-05-11

Applicant: Lam Research Corporation

Inventor： William T. Lee ,  Bart J. van Schravendijk ,  David Charles Smith ,  Michal Danek ,  Patrick A. Van Cleemput ,  Ramesh Chandrasekharan

IPC: H01L21/00 ,  H01L21/28 ,  G02F1/1335 ,  H01J37/32 ,  H01L21/02 ,  H01L29/51

Abstract: Efficient integrated sequential deposition of alternating layers of dielectric and conductor, for example oxide/metal or metal nitride, e.g., SiO2/TiN, in a single tool, and even in a single process chamber enhances throughput without compromising quality when directly depositing a OMOM stack with many layers. Conductor and dielectric film deposition of a stack of at least 20 conductor/dielectric film pairs in the same processing tool or chamber, without breaking vacuum between the film depositions, such that there is no substantial cross-contamination between the conductor and dielectric film depositions, can be achieved.

公开(公告)号：US09997422B2

公开(公告)日：2018-06-12

申请号：US15089960

申请日：2016-04-04

Applicant: Lam Research Corporation

Inventor： Ishtak Karim ,  Yukinori Sakiyama ,  Yaswanth Rangineni ,  Edward Augustyniak ,  Douglas Keil ,  Ramesh Chandrasekharan ,  Adrien LaVoie ,  Karl Leeser

IPC: H05H1/24 ,  H01L21/66 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/458 ,  H01L21/263 ,  H01L21/683 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02 ,  C23C16/455 ,  C23C16/509

CPC classification number: H01L22/20 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/263 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/683 ,  H01L22/12

Abstract: A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency signals of a first signal frequency are supplied to the plasma generation region to generate a plasma within the plasma generation region. Formation of a plasma instability is detected within the plasma based on supply of the radiofrequency signals of the first signal frequency. After detecting formation of the plasma instability, radiofrequency signals of a second signal frequency are supplied to the plasma generation region in lieu of the radiofrequency signals of the first signal frequency to generate the plasma. The second signal frequency is greater than the first signal frequency and is set to cause a reduction in ion energy within the plasma and a corresponding reduction in secondary electron emission from the wafer caused by ion interaction with the wafer.

公开(公告)号：US09970108B2

公开(公告)日：2018-05-15

申请号：US14798652

申请日：2015-07-14

Applicant: Lam Research Corporation

Inventor： Jun Qian ,  Hu Kang ,  Purushottam Kumar ,  Chloe Baldasseroni ,  Heather Landis ,  Andrew Kenichi Duvall ,  Mohamed Sabri ,  Ramesh Chandrasekharan ,  Karl Leeser ,  Shankar Swaminathan ,  David Smith ,  Jeremiah Baldwin ,  Eashwar Ranganathan ,  Adrien LaVoie ,  Frank Pasquale ,  Jeongseok Ha ,  Ingi Bae

IPC: C23C16/46 ,  C23C16/455 ,  C23C16/448

CPC classification number: C23C16/45544 ,  C23C16/4481 ,  C23C16/4554

Abstract: A vapor delivery system includes an ampoule to store liquid precursor and a heater to partially vaporize the liquid precursor. A first valve communicates with a push gas source and the ampoule. A second valve supplies vaporized precursor to a heated injection manifold. A valve manifold includes a first node in fluid communication with an outlet of the heated injection manifold, a third valve having an inlet in fluid communication with the first node and an outlet in fluid communication with vacuum, a fourth valve having an inlet in fluid communication with the first node and an outlet in fluid communication with a second node, a fifth valve having an outlet in fluid communication with the second node, and a sixth valve having an outlet in fluid communication with the second node. A gas distribution device is in fluid communication with the second node.

公开(公告)号：US20180102245A1

公开(公告)日：2018-04-12

申请号：US15817579

申请日：2017-11-20

Applicant: LAM RESEARCH CORPORATION

Inventor： James S. Sims ,  Jon Henri ,  Ramesh Chandrasekharan ,  Andrew John McKerrow ,  Seshasayee Varadarajan ,  Kathryn Merced Kelchner

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/02 ,  C23C16/50 ,  C23C16/455 ,  C23C16/34

CPC classification number: H01L21/0228 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32513 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32715 ,  H01J37/32862 ,  H01J2237/3321 ,  H01J2237/335 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274

Abstract: A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.

公开(公告)号：US09824884B1

公开(公告)日：2017-11-21

申请号：US15287176

申请日：2016-10-06

Applicant: LAM RESEARCH CORPORATION

Inventor： James S. Sims ,  Jon Henri ,  Ramesh Chandrasekharan ,  Andrew John McKerrow ,  Seshasayee Varadarajan ,  Kathryn Merced Kelchner

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/34 ,  C23C16/50 ,  C23C16/455 ,  H01J37/32

CPC classification number: H01L21/0228 ,  C23C16/0227 ,  C23C16/0272 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32513 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32715 ,  H01J37/32862 ,  H01J2237/3321 ,  H01J2237/335 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274

Abstract: A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.

公开(公告)号：US20170275756A1

公开(公告)日：2017-09-28

申请号：US15077844

申请日：2016-03-22

Applicant: Lam Research Corporation

Inventor： Ryan Blaquiere ,  Ramesh Chandrasekharan ,  Shankar Swaminathan ,  Yukinori Sakiyama

IPC: C23C16/455 ,  H01L21/687 ,  H01L21/02

CPC classification number: C23C16/45544 ,  C23C16/4585 ,  C23C16/509 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68771

Abstract: Pedestal assemblies and methods for using said pedestal assemblies, used in processing chambers implemented for processing substrates are disclosed. In one example, the pedestal assembly includes a center column coupled to a lower chamber body of a processing chamber. A pedestal body is coupled to the center column. The pedestal body includes a substrate support surface and an annular step formed around a circumference of the pedestal body and surrounding the substrate support surface. Further included is a first annular ring segment disposed within the annular step. The first annular ring is defined from a conductive material. A second annular ring segment is also disposed within the annular step. The second annular ring is defined from a dielectric material. The first annular ring and the second annular ring fill the annular step around the circumference of the pedestal body. The first and second annular rings provide a fill that surrounds the substrate support and acts to modify an impedance for improving azimuthal uniformity of films deposited over the substrate using the processing chamber.

公开(公告)号：US20170178898A1

公开(公告)日：2017-06-22

申请号：US15051886

申请日：2016-02-24

Applicant: Lam Research Corporation

Inventor： Hu Kang ,  Ishtak Karim ,  Purushottam Kumar ,  Jun Qian ,  Ramesh Chandrasekharan ,  Adrien LaVoie

IPC: H01L21/02 ,  H01J37/32

CPC classification number: H01L21/02274 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/4585 ,  C23C16/52 ,  H01J37/32467 ,  H01J37/32477 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/332 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/68714 ,  H01L21/68735

Abstract: A process tuning kit for use in a chemical deposition apparatus wherein the process tuning kit includes a carrier ring, horseshoes and shims. The horseshoes have the same dimensions and the shims are provided in sets with different thicknesses to control the height of the horseshoes with respect to an upper surface of a pedestal assembly on which the horseshoes and shims are mounted. A semiconductor substrate is transported into a vacuum chamber of the chemical deposition apparatus by the carrier ring which is placed on the horseshoes such that minimum contact area supports lift the substrate from the carrier ring and support the substrate at a predetermined offset with respect to an upper surface of the pedestal assembly. During processing of the substrate, backside deposition can be reduced by using shims of desired thickness to control the predetermined offset.

公开(公告)号：US09631276B2

公开(公告)日：2017-04-25

申请号：US14805852

申请日：2015-07-22

Applicant: LAM RESEARCH CORPORATION

Inventor： Ramesh Chandrasekharan ,  Jennifer O'Loughlin ,  Saangrut Sangplung ,  Shankar Swaminathan ,  Frank Pasquale ,  Chloe Baldasseroni ,  Adrien LaVoie

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/45561 ,  C23C16/4408 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45591 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/3321 ,  H01J2237/334 ,  H01J2237/335

Abstract: A gas delivery system includes a first valve including an inlet that communicates with a first gas source. A first inlet of a second valve communicates with an outlet of the first valve and a second inlet of the second valve communicates with a second gas source. An inlet of a third valve communicates with a third gas source. A connector includes a first gas channel and a cylinder defining a second gas channel. The cylinder and the first gas channel collectively define a flow channel between an outer surface of the cylinder and an inner surface of the first gas channel. The flow channel communicates with the outlet of the third valve and the first end of the second gas channel. A third gas channel communicates with the second gas channel, with the outlet of the second valve and with a gas distribution device of a processing chamber.