公开(公告)号：US10985109B2

公开(公告)日：2021-04-20

申请号：US16234233

申请日：2018-12-27

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoWang Koo ,  SungWon Cho ,  BongWoo Choi

IPC: H01L21/56 ,  H01L21/48 ,  H01L23/552 ,  H01L23/31 ,  H01R43/20 ,  H01R43/26 ,  H01R12/79 ,  H01R12/52

Abstract: A semiconductor device has a substrate including a terminal and an insulating layer formed over the terminal. An electrical component is disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A portion of the insulating layer over the terminal is exposed from the encapsulant. A shielding layer is formed over the encapsulant and terminal. A portion of the shielding layer is removed to expose the portion of the insulating layer. The portion of the insulating layer is removed to expose the terminal. The portion of the shielding layer and the portion of the insulating layer can be removed by laser ablation.

公开(公告)号：US20200051926A1

公开(公告)日：2020-02-13

申请号：US16529486

申请日：2019-08-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： SungWon Cho ,  ChangOh Kim ,  Il Kwon Shim ,  InSang Yoon ,  KyoungHee Park

IPC: H01L23/552 ,  H01L23/522 ,  H01L23/36 ,  H01L23/00

Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.

公开(公告)号：US12266615B2

公开(公告)日：2025-04-01

申请号：US18174790

申请日：2023-02-27

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoungHee Park ,  JinHee Jung ,  OMin Kwon ,  JiWon Lee ,  YuJeong Jang

IPC: H01L23/552 ,  H01L21/033 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: A semiconductor device has a semiconductor package including a substrate comprising a land grid array. A component is disposed over the substrate. An encapsulant is deposited over the component. The land grid array remains outside the encapsulant. A fanged metal mask is disposed over the land grid array. A shielding layer is formed over the semiconductor package. The fanged metal mask is removed after forming the shielding layer.

公开(公告)号：US12211804B2

公开(公告)日：2025-01-28

申请号：US18429080

申请日：2024-01-31

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoWang Koo ,  SungWon Cho ,  BongWoo Choi ,  JiWon Lee

IPC: H01L23/552 ,  H01L21/56 ,  H01L21/60 ,  H01L23/00 ,  H01L23/28 ,  H01L23/66 ,  H01L25/00

Abstract: A semiconductor device has a substrate. A first component and second component are disposed over the substrate. The first component includes an antenna. A lid is disposed over the substrate between the first component and second component. An encapsulant is deposited over the substrate and lid. A conductive layer is formed over the encapsulant and in contact with the lid. A first portion of the conductive layer over the first component is removed using laser ablation.

公开(公告)号：US20240332207A1

公开(公告)日：2024-10-03

申请号：US18193894

申请日：2023-03-31

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  JinHee Jung

IPC: H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L23/552 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/565 ,  H01L23/3128 ,  H01L23/49822

Abstract: A semiconductor device has a substrate and an electrical component disposed over the substrate. An encapsulant is deposited over the electrical component and substrate. A magnetic film material is formed over the encapsulant. The magnetic film material may extend down a side surface of the semiconductor device. The magnetic film material is subject to laser spike annealing in a magnetic field. A shielding layer is formed over the magnetic film material. The laser spike annealing of the magnetic film material in the magnetic field can be done after forming the shielding layer. The shielding layer may extend down a side surface of the semiconductor device. A first magnet is disposed on a first side of the semiconductor device. A second magnet is disposed on a second side of the semiconductor device opposite the first side of the semiconductor device.

公开(公告)号：US11923260B2

公开(公告)日：2024-03-05

申请号：US18154993

申请日：2023-01-16

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： JinHee Jung ,  ChangOh Kim

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/60 ,  H01L23/66

CPC classification number: H01L23/31 ,  H01L21/565 ,  H01L23/60 ,  H01L23/66

Abstract: A semiconductor device has an electronic component assembly with a substrate and a plurality of electrical components disposed over the substrate. A conductive post is formed over the substrate. A molding compound sheet is disposed over the electrical component assembly. A carrier including a first electrical circuit pattern is disposed over the molding compound sheet. The carrier is pressed against the molding compound sheet to dispose a first encapsulant over and around the electrical component assembly and embed the first electrical circuit pattern in the first encapsulant. A shielding layer can be formed over the electrical components assembly. The carrier is removed to expose the first electrical circuit pattern. A second encapsulant is deposited over the first encapsulant and the first electrical circuit pattern. A second electrical circuit pattern is formed over the second encapsulant. A semiconductor package is disposed over the first electrical circuit pattern.

公开(公告)号：US20240021536A1

公开(公告)日：2024-01-18

申请号：US17812339

申请日：2022-07-13

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  JinHee Jung ,  OMin Kwon

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/498 ,  H01L23/66 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L23/552 ,  H01L23/3121 ,  H01L23/49811 ,  H01L23/66 ,  H01L21/4853 ,  H01L21/565 ,  H01L2223/6677

Abstract: A semiconductor device has a substrate and encapsulant deposited over the substrate. An electrical connector is disposed over the substrate outside the encapsulant. An antenna can be formed over the substrate. A first shielding material is disposed over a portion of the encapsulant without covering the electrical connector with the first shielding material. The first shielding material is disposed over the portion of the encapsulant and the portion of the substrate using a direct jet printer. A cover is disposed over the electrical connector. A second shielding material is disposed over the encapsulant to prevent the second shielding material from reaching the electrical connector. The second shielding material overlaps the first shielding material and covers a side surface of the encapsulant and a side surface of the substrate. The cover is removed to expose the electrical connector free of shielding material.

公开(公告)号：US20240014093A1

公开(公告)日：2024-01-11

申请号：US17810901

申请日：2022-07-06

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  JinHee Jung ,  OMin Kwon ,  HeeSoo Lee

IPC: H01L23/367 ,  H01L23/373 ,  H01L23/433

CPC classification number: H01L23/3672 ,  H01L23/373 ,  H01L23/4334

Abstract: A semiconductor device has a first substrate and electrical component disposed over the first substrate. A graphene layer is disposed over the electrical component, and a thermal interface material is disposed between the graphene layer. A heat sink is disposed over the thermal interface material. The graphene layer, in combination with the thermal interface material, aids with the heat transfer between the electrical component and heat sink. The graphene layer may be disposed over a second substrate made of copper. An encapsulant is deposited over the first substrate and around the electrical component and graphene substrate. The thermal interface material and heat sink may extend over the encapsulant. The heat sink can have vertical or angled extensions from the horizontal portion of the heat sink down to the substrate. The heat sink can extend over multiple modules.

公开(公告)号：US11862572B2

公开(公告)日：2024-01-02

申请号：US18161693

申请日：2023-01-30

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  KyoungHee Park ,  SeongHwan Park ,  JinHee Jung

IPC: H01L23/552 ,  H01L23/66 ,  H01L21/56 ,  H01L23/31 ,  H01L21/48 ,  H01Q1/22

CPC classification number: H01L23/552 ,  H01L21/486 ,  H01L21/56 ,  H01L23/31 ,  H01L23/66 ,  H01Q1/2283

Abstract: A semiconductor device has a first package layer. A first shielding layer is formed over the first package layer. The first shielding layer is patterned to form a redistribution layer. An electrical component is disposed over the redistribution layer. An encapsulant is deposited over the electrical component. A second shielding layer is formed over the encapsulant. The second shielding layer is patterned. The patterning of the first shielding layer and second shielding layer can be done with a laser. The second shielding layer can be patterned to form an antenna.

公开(公告)号：US20230420382A1

公开(公告)日：2023-12-28

申请号：US17808613

申请日：2022-06-24

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： ChangOh Kim ,  JinHee Jung ,  YoungCheol Kim

IPC: H01L23/552 ,  H01L25/16 ,  H01L23/00

CPC classification number: H01L23/552 ,  H01L25/165 ,  H01L24/96 ,  H01L23/49816 ,  H01L24/16 ,  H01L2224/16235 ,  H01L2924/3025 ,  H01L24/97

Abstract: A semiconductor device has a substrate. A first electrical component and second electrical component are disposed over the substrate. A conductive pillar is formed over the substrate between the first electrical component and second electrical component. A first shielding layer is formed over the first electrical component and conductive pillar by jet printing conductive material. A second shielding layer is formed over the first electrical component and second electrical component by sputtering, spraying, or plating conductive material. An insulating layer is optionally formed between the first shielding layer and second shielding layer by jet printing insulating material over the first shielding layer.