公开(公告)号：US20230402343A1

公开(公告)日：2023-12-14

申请号：US17805951

申请日：2022-06-08

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： SeungHyun Lee ,  HeeSoo Lee

IPC: H01L23/367 ,  H01L23/522 ,  H01L23/373

CPC classification number: H01L23/3675 ,  H01L23/373 ,  H01L23/5225

Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. A tape is disposed over the semiconductor die. An encapsulant is deposited over the substrate, semiconductor die, and tape. The tape is removed to leave a cavity in the encapsulant over the semiconductor die. A shielding layer is formed over the encapsulant and semiconductor die. A heat spreader is disposed over the shielding layer. The heat spreader includes a protrusion extending into the cavity of the encapsulant.

公开(公告)号：US11842991B2

公开(公告)日：2023-12-12

申请号：US16990887

申请日：2020-08-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  OhHan Kim ,  HeeSoo Lee ,  HunTeak Lee ,  InSang Yoon ,  Il Kwon Shim

IPC: H01L25/00 ,  H01L23/00 ,  H01L21/56 ,  H01L23/552 ,  H01L25/065 ,  H01L25/16 ,  H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L23/50

CPC classification number: H01L25/50 ,  H01L21/56 ,  H01L21/561 ,  H01L23/552 ,  H01L24/17 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/16 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/50 ,  H01L23/5385 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/1146 ,  H01L2224/11334 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/48091 ,  H01L2224/48179 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3025 ,  H01L2224/97 ,  H01L2224/81

Abstract: A semiconductor device has a first substrate and a second substrate. An opening is formed through the second substrate. A first semiconductor component and second semiconductor component are disposed between the first substrate and second substrate. The second substrate is electrically coupled to the first substrate through the first semiconductor component. A first terminal of the first semiconductor component is electrically coupled to the first substrate. A second terminal of the first semiconductor component is electrically coupled to the second substrate. The second semiconductor component extends into the opening. An encapsulant is deposited over the first substrate and second substrate.

公开(公告)号：US11664327B2

公开(公告)日：2023-05-30

申请号：US16950295

申请日：2020-11-17

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  KyungHwan Kim ,  HeeSoo Lee ,  ChangOh Kim ,  KyoungHee Park ,  JinHee Jung ,  OMin Kwon ,  JiWon Lee ,  YuJeong Jang

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/498

CPC classification number: H01L23/552 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/49822

Abstract: A semiconductor package has a substrate, a first component disposed over the substrate, an encapsulant deposited over the first component, and a second component disposed over the substrate outside the encapsulant. A metal mask is disposed over the second component. A shielding layer is formed over the semiconductor package. The metal mask after forming the shielding layer. The shielding layer is optionally formed on a contact pad of the substrate while a conic area above the contact pad that extends 40 degrees from vertical remains free of the encapsulant and metal mask while forming the shielding layer. Surfaces of the metal mask and encapsulant oriented toward the contact pad can be sloped. The metal mask can be disposed and removed using a pick-and-place machine.

公开(公告)号：US20220364222A1

公开(公告)日：2022-11-17

申请号：US17814796

申请日：2022-07-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： OhHan Kim ,  HunTeak Lee ,  SeIl Jung ,  HeeSoo Lee

IPC: C23C14/50 ,  H01L23/00 ,  H01L23/498 ,  H01L23/552 ,  C23C14/34

Abstract: A semiconductor manufacturing device has a cooling pad with a plurality of movable pins. The cooling pad includes a fluid pathway and a plurality of springs disposed in the fluid pathway. Each of the plurality of springs is disposed under a respective movable pin. A substrate includes an electrical component disposed over a surface of the substrate. The substrate is disposed over the cooling pad with the electrical component oriented toward the cooling pad. A force is applied to the substrate to compress the springs. At least one of the movable pins contacts the substrate. A cooling fluid is disposed through the fluid pathway.

公开(公告)号：US11367690B2

公开(公告)日：2022-06-21

申请号：US16880173

申请日：2020-05-21

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  Woonjae Beak ,  YiSu Park ,  OhHan Kim ,  HunTeak Lee ,  HeeSoo Lee

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683 ,  H01L25/16 ,  H01L23/498

Abstract: A semiconductor device has a substrate with a first opening and second opening formed in the substrate. A first semiconductor component is disposed on the substrate. The substrate is disposed on a carrier. A second semiconductor component is disposed on the carrier in the first opening of the substrate. A third semiconductor component is disposed in the second opening. The third semiconductor component is a semiconductor package in some embodiments. A first shielding layer may be formed over the semiconductor package. An encapsulant is deposited over the substrate, first semiconductor component, and second semiconductor component. A shielding layer may be formed over the encapsulant.

公开(公告)号：US20220115332A1

公开(公告)日：2022-04-14

申请号：US17645257

申请日：2021-12-20

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Deokkyung Yang ,  HeeSoo Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L21/78

Abstract: A semiconductor device has a substrate. A conductive layer is formed over the substrate and includes a ground plane. A first tab of the conductive layer extends from the ground plane and less than half-way across a saw street of the substrate. A shape of the first tab can include elliptical, triangular, parallelogram, or rectangular portions, or any combination thereof. An encapsulant is deposited over the substrate. The encapsulant and substrate are singulated through the saw street. An electromagnetic interference (EMI) shielding layer is formed over the encapsulant. The EMI shielding layer contacts the first tab of the conductive layer.

公开(公告)号：US20210305168A1

公开(公告)日：2021-09-30

申请号：US17032576

申请日：2020-09-25

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： WoonJae Beak ,  MinSu Kim ,  HeeSoo Lee

IPC: H01L23/532 ,  H01L23/31 ,  H01L21/768

Abstract: A semiconductor device has a substrate and a first conductive layer formed over the substrate. A second conductive layer is formed over the first conductive layer. The first conductive layer can be copper, and the second conductive layer can be nickel. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. A flux material is deposited over the second conductive layer by a printing process. An electrical component is disposed over the flux material, and the flux material is reflowed to make electrical connection between the electrical component and second conductive layer. The flux material substantially vaporizes during the reflow to reduce the occurrence of short circuits. The electrical components can be placed over the substrate with narrow spacing and higher density given the use of the flux material to make electrical connection. An encapsulant is deposited over the electrical component.

公开(公告)号：US10937741B2

公开(公告)日：2021-03-02

申请号：US16193691

申请日：2018-11-16

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  HeeSoo Lee ,  Wanil Lee ,  SangDuk Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/66

Abstract: A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.

公开(公告)号：US20200373289A1

公开(公告)日：2020-11-26

申请号：US16990887

申请日：2020-08-11

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  OhHan Kim ,  HeeSoo Lee ,  HunTeak Lee ,  InSang Yoon ,  Il Kwon Shim

IPC: H01L25/00 ,  H01L23/00 ,  H01L21/56 ,  H01L23/552 ,  H01L25/065 ,  H01L25/16

Abstract: A semiconductor device has a first substrate and a second substrate. An opening is formed through the second substrate. A first semiconductor component and second semiconductor component are disposed between the first substrate and second substrate. The second substrate is electrically coupled to the first substrate through the first semiconductor component. A first terminal of the first semiconductor component is electrically coupled to the first substrate. A second terminal of the first semiconductor component is electrically coupled to the second substrate. The second semiconductor component extends into the opening. An encapsulant is deposited over the first substrate and second substrate.

公开(公告)号：US20200286835A1

公开(公告)日：2020-09-10

申请号：US16880173

申请日：2020-05-21

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  Woonjae Beak ,  YiSu Park ,  OhHan Kim ,  HunTeak Lee ,  HeeSoo Lee

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L21/683

Abstract: A semiconductor device has a substrate with a first opening and second opening formed in the substrate. A first semiconductor component is disposed on the substrate. The substrate is disposed on a carrier. A second semiconductor component is disposed on the carrier in the first opening of the substrate. A third semiconductor component is disposed in the second opening. The third semiconductor component is a semiconductor package in some embodiments. A first shielding layer may be formed over the semiconductor package. An encapsulant is deposited over the substrate, first semiconductor component, and second semiconductor component. A shielding layer may be formed over the encapsulant.