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    MEMS device and fabrication method thereof
    51.
    发明申请
    MEMS device and fabrication method thereof 失效
    MEMS器件及其制造方法

    公开(公告)号：US20030183887A1

    公开(公告)日：2003-10-02

    申请号：US10384495

    申请日：2003-03-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eun-sung Lee ,  Chung-woo Kim ,  In-sang Song ,  Jong-seok Kim ,  Moon-chul Lee

    IPC: H01L021/00 ,  H01L027/14 ,  H01L029/82

    CPC classification number: B81B3/0078 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C2201/0107 ,  B81C2201/014 ,  H01H59/0009

    Abstract: A method for fabricating a MEMS device having a fixing part fixed to a substrate, a connecting part, a driving part, a driving electrode, and contact parts, includes patterning the driving electrode on the substrate; forming an insulation layer on the substrate; patterning the insulation layer and etching a fixing region and a contact region of the insulation layer; forming a metal layer over the substrate; planarizing the metal layer until the insulation layer is exposed; forming a sacrificial layer on the substrate; patterning the sacrificial layer to form an opening exposing a portion of the insulation layer and the metal layer in the fixing region; forming a MEMS structure layer on the sacrificial layer to partially fill the opening, thereby forming sidewalls therein; and selectively removing a portion of the sacrificial layer by etching so that a portion of the sacrificial layer remains in the fixing region.

    Abstract translation: 一种用于制造具有固定到基板上的固定部件，连接部件，驱动部件，驱动电极和接触部件的MEMS器件的方法，包括在所述基板上图形化所述驱动电极; 在所述基板上形成绝缘层; 图案化绝缘层并蚀刻绝缘层的固定区域和接触区域; 在衬底上形成金属层; 平坦化金属层直到绝缘层露出; 在所述基板上形成牺牲层; 图案化牺牲层以形成露出固定区域中绝缘层和金属层的一部分的开口; 在所述牺牲层上形成MEMS结构层以部分地填充所述开口，从而在其中形成侧壁; 并且通过蚀刻选择性地去除牺牲层的一部分，使得牺牲层的一部分保留在固定区域中。

    Trilayered beam MEMS device and related methods
    52.
    发明申请
    Trilayered beam MEMS device and related methods 有权
    三层梁MEMS器件及相关方法

    公开(公告)号：US20030119221A1

    公开(公告)日：2003-06-26

    申请号：US10290920

    申请日：2002-11-08

    Applicant: Coventor, Inc.

    Inventor： Shawn Jay Cunningham ,  Svetlana Tatic-Lucic

    IPC: H01L021/00 ,  H01L029/82

    CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

    Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

    Abstract translation: 三层梁MEMS器件及相关方法。 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 以及去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

    Integrated electromechanical switch and tunable capacitor and method of making the same
    54.
    发明申请
    Integrated electromechanical switch and tunable capacitor and method of making the same 有权
    集成机电开关和可调谐电容器及其制造方法

    公开(公告)号：US20020171121A1

    公开(公告)日：2002-11-21

    申请号：US10147300

    申请日：2002-05-17

    Inventor： Mehmet Ozgur

    IPC: H01L029/00

    CPC classification number: H01H1/0036 ,  B81B2201/014 ,  B81B2201/031 ,  B81C1/00246 ,  B81C2203/0735 ,  H01H61/00 ,  H01H2061/006

    Abstract: A monolithically integrated, electromechanical microwave switch, capable of handling signals from DC to millimeter-wave frequencies, and an integrated electromechanical tunable capacitor are described. Both electromechanical devices include movable beams actuated either by thermo-mechanical or by electrostatic forces. The devices are fabricated directly on finished silicon-based integrated circuit wafers, such as CMOS, BiCMOS or bipolar wafers. The movable beams are formed by selectively removing the supporting silicon underneath the thin films available in a silicon-based integrated circuit technology, which incorporates at least one polysilicon layer and two metallization layers. A cavity and a thick, low-loss metallization are used to form an electrode above the movable beam. A thick mechanical support layer is formed on regions where the cavity is located, or substrate is bulk-micro-machined, i.e., etched.

    Abstract translation: 描述了能够处理从DC到毫米波频率的信号的单片集成的机电微波开关，以及集成的机电可调电容器。 两个机电装置都包括通过热机械或静电力而致动的可移动梁。 这些器件直接在成品硅基集成电路晶片上制造，例如CMOS，BiCMOS或双极晶片。 可移动光束通过选择性地去除在基于硅的集成电路技术中可用的薄膜下面的支撑硅而形成，该技术包括至少一个多晶硅层和两个金属化层。 使用空腔和厚的低损耗金属化在可动梁的上方形成电极。 在空腔所在的区域上形成厚的机械支撑层，或者衬底被体微加工，即蚀刻。

    Thin-film electrothermal device
    55.
    发明授权
    Thin-film electrothermal device 失效
    薄膜电热装置

    公开(公告)号：US4423401A

    公开(公告)日：1983-12-27

    申请号：US400331

    申请日：1982-07-21

    Applicant: Robert A. Mueller

    Inventor： Robert A. Mueller

    IPC: H01H37/32 ,  B81B3/00 ,  H01H1/00 ,  H01H1/20 ,  H01H37/52 ,  H01H61/00 ,  H01H61/02 ,  H01H61/04

    CPC classification number: H01H61/02 ,  B81B3/0086 ,  B81B2201/014 ,  H01H1/0036 ,  H01H1/20 ,  H01H2061/006

    Abstract: Thin film multilayer technology is used to build microminiature electromechanical switches having low resistance metal-to-metal contacts and distinct on-off characteristics. The switches, which are electrothermally actuated, are fabricated on conventional hybrid circuit substrates using processes compatible with those employed to produce thin-film electrical circuits. In a preferred form, such a switch includes a cantilever actuating member comprising a resiliently bendable strip of a hard insulating material (e.g., silicon nitride) to which a metal (e.g., nickel) heating element is bonded. The free end of the cantilever member carries a metal contact, which is moved into (or out of) engagement with an underlying fixed contact by controlled bending of the member via electrical current applied to the heating element.

    Abstract translation: 薄膜多层技术用于构建具有低电阻金属对金属触点和不同开关特性的微型机电开关。 使用与用于制造薄膜电路的那些相兼容的工艺在常规混合电路基板上制造电热驱动的开关。 在优选形式中，这种开关包括悬臂致动构件，其包括与金属（例如镍）加热元件接合的硬绝缘材料（例如，氮化硅）的可弹性弯曲的带。 悬臂构件的自由端承载金属接触件，该金属接触件通过经由施加到加热元件的电流而受到构件的受控弯曲而移动到（或不脱离）接合下面的固定接触件。

    MEMS bridge devices and methods of manufacture thereof
    56.
    发明授权
    MEMS bridge devices and methods of manufacture thereof 有权

    公开(公告)号：US11834327B2

    公开(公告)日：2023-12-05

    申请号：US16585242

    申请日：2019-09-27

    Applicant: SOFANT TECHNOLOGIES LTD.

    Inventor： Nakul Haridas ,  Victor Steel

    IPC: B81B7/00 ,  H01H59/00 ,  H01Q1/50 ,  H01P1/18 ,  H01P3/08 ,  H01P11/00

    CPC classification number: B81B7/0006 ,  H01H59/0009 ,  H01P1/18 ,  H01P3/08 ,  H01P11/00 ,  H01Q1/50 ,  B81B2201/014 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0109 ,  B81B2203/019 ,  B81B2203/0181 ,  B81B2203/0307 ,  H01H2239/006 ,  H01H2239/018

    Abstract: A microelectromechanical systems (MEMS) device comprising: a substrate; a signal conductor supported on the substrate; ground conductors supported on the substrate on either side of the signal conductor; and a MEMS bridge at least one end of which is mechanically connected to the substrate by way of at least one anchor, the MEMS bridge comprising an electrically conductive switching portion, the electrically conductive switching portion comprising a switching signal conductor region and a switching ground conductor region, the switching signal conductor region being provided over the signal conductor and the switching ground conductor region being provided over a said ground conductor, the electrically conductive switching region being movable relative to the said signal and ground conductors respectively to thereby change the inductances between the switching signal conductor region and the signal conductor and between the switching ground conductor region and the respective ground conductor, wherein there is no continuous electrically conductive path extending from the switching conductor region to the at least one anchor. Capacative and ohmic switches, a varactor, a phase shifter, a tuneable power splitter/combiner, tuneable attenuator, SPDT switch and antenna apparatus comprising said devices.

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