公开(公告)号：US08921165B2

公开(公告)日：2014-12-30

申请号：US13565693

申请日：2012-08-02

Applicant: Brian I. Troy ,  Mickael Renault ,  Thomas L. Maguire ,  Joseph Damian Gordon Lacey ,  James F. Bobey

Inventor： Brian I. Troy ,  Mickael Renault ,  Thomas L. Maguire ,  Joseph Damian Gordon Lacey ,  James F. Bobey

IPC: H01L21/82 ,  H01L21/66 ,  G01R31/26 ,  H01L21/00 ,  H01L23/28 ,  G01P15/08 ,  H01L21/70 ,  B81C1/00 ,  H01H1/00

CPC classification number: B81C1/00484 ,  B81B3/0008 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81C2201/0108 ,  H01H1/0036 ,  H01H2001/0089

Abstract: The present invention generally relates to a MEMS device in which silicon residues from the adhesion promoter material are reduced or even eliminated from the cavity floor. The adhesion promoter is typically used to adhere sacrificial material to material above the substrate. The adhesion promoter is the removed along with then sacrificial material. However, the adhesion promoter leaves silicon based residues within the cavity upon removal. The inventors have discovered that the adhesion promoter can be removed from the cavity area prior to depositing the sacrificial material. The adhesion promoter which remains over the remainder of the substrate is sufficient to adhere the sacrificial material to the substrate without fear of the sacrificial material delaminating. Because no adhesion promoter is used in the cavity area of the device, no silicon residues will be present within the cavity after the switching element of the MEMS device is freed.

Abstract translation: 本发明一般涉及一种MEMS器件，其中来自粘合促进剂材料的硅残余物从空腔底板减少甚至消除。 粘合促进剂通常用于将牺牲材料粘附到衬底上方的材料上。 粘附促进剂与牺牲材料一起被去除。 然而，粘合促进剂在去除时将硅基残留物留在空腔内。 发明人已经发现，在沉积牺牲材料之前，可以从空腔区域去除粘合促进剂。 保留在基材的其余部分上的粘合促进剂足以将牺牲材料粘附到基材上，而不用担心牺牲材料分层。 因为在器件的空腔区域中没有使用粘合促进剂，所以在MEMS器件的开关元件被释放之后，腔内将不存在硅残余物。

公开(公告)号：US20140202838A1

公开(公告)日：2014-07-24

申请号：US14236639

申请日：2012-07-18

Applicant: Akihiko Sano ,  Takeshi Fujiwara ,  Hidenori Maruyama ,  Tomonori Seki

Inventor： Akihiko Sano ,  Takeshi Fujiwara ,  Hidenori Maruyama ,  Tomonori Seki

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  B81B2201/018 ,  B81B2207/012 ,  B81B2207/095 ,  B81C1/00238 ,  B81C2203/035 ,  H01H2001/0078

Abstract: An electronic component has a first member in which an electrostatic actuator is provided, a second member in which a drive integrated circuit for driving the electrostatic actuator is provided, and join parts that joins the first member and the second member while a surface on which the electrostatic actuator is provided in the first member and a surface on which the drive integrated circuit is provided in the second member are opposed to each other. The electrostatic actuator and the drive integrated circuit are disposed in a space surrounded by the first member, the second member, and the join parts.

Abstract translation: 电子部件具有设置有静电致动器的第一部件，设置有用于驱动静电致动器的驱动集成电路的第二部件和与第一部件和第二部件连接的接合部， 静电致动器设置在第一构件中，并且在第二构件中设置有驱动集成电路的表面彼此相对。 静电致动器和驱动集成电路设置在由第一构件，第二构件和接合部包围的空间中。

公开(公告)号：US08736138B2

公开(公告)日：2014-05-27

申请号：US12239302

申请日：2008-09-26

Applicant: Robert C. Davis ,  Richard R. Vanfleet ,  David N. Hutchison

Inventor： Robert C. Davis ,  Richard R. Vanfleet ,  David N. Hutchison

IPC: H02N1/00 ,  H02N10/00

CPC classification number: H01J5/18 ,  B81B2201/018 ,  B81B2203/0109 ,  B81C1/00031 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  C01B32/168 ,  C01B2202/20 ,  C01B2202/34 ,  C01B2202/36

Abstract: A carbon nanotube MEMS assembly comprises a plurality of carbon nanotubes oriented into a patterned frame, the patterned frame defining at least two components of a MEMS device. An interstitial material at least partially binds adjacent carbon nanotubes one to another. At least one component of the frame is fixed and at least one component of the frame is movable relative to the fixed component.

Abstract translation: 碳纳米管MEMS组件包括定向成图案化框架的多个碳纳米管，所述图案化框架限定MEMS装置的至少两个部件。 间隙材料至少部分地相邻地邻接碳纳米管。 框架的至少一个部件是固定的，并且框架的至少一个部件相对于固定部件是可移动的。

公开(公告)号：US20140138814A1

公开(公告)日：2014-05-22

申请号：US14049910

申请日：2013-10-09

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Abderrezak Marzaki ,  Yoann Goasduff ,  Virginie Bidal ,  Pascal Fornara

IPC: H01L23/482 ,  H01L21/48

CPC classification number: G01V7/04 ,  B81B3/001 ,  B81B2201/018 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0361 ,  B81B2203/04 ,  B81C1/00111 ,  H01H9/02 ,  H01H37/04 ,  H01H37/32 ,  H01H37/42 ,  H01H61/013 ,  H01L21/32139 ,  H01L28/82 ,  H01L28/88 ,  H01L29/4238

Abstract: A method for producing an integrated circuit pointed element is disclosed. An element has a projection with a concave part directing its concavity towards the element. The element includes a first etchable material. A zone is formed around the concave part of the element. The zone includes a second material that is less rapidly etchable than the first material for a particular etchant. The first material and the second material are etched with the particular etchant to form an open crater in the concave part and thus to form a pointed region of the element.

Abstract translation: 公开了一种用于制造集成电路尖锐元件的方法。 元件具有突出部，其凹部朝向元件引导其凹面。 元件包括第一可蚀刻材料。 围绕元件的凹部形成区域。 该区域包括与用于特定蚀刻剂的第一材料不太可蚀刻的第二材料。 用特定的蚀刻剂蚀刻第一材料和第二材料，以在凹部中形成开放的凹坑，从而形成元件的尖锐区域。

公开(公告)号：US08698310B2

公开(公告)日：2014-04-15

申请号：US13580391

申请日：2010-12-09

Applicant: Junya Yamamoto ,  Koji Narise

Inventor： Junya Yamamoto ,  Koji Narise

IPC: H01L21/762

CPC classification number: H01P3/081 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2203/0136 ,  H01H59/0009 ,  H01H2001/0078 ,  H01P1/127

Abstract: A structure for a signal line has the signal line having a base, a lower insulating layer formed at an upper surface of the base, a semiconductor layer disposed along a pathway at an upper surface of the lower insulating layer, at least a part of the semiconductor layer configured to transmit a signal, an upper insulating layer formed at an upper surface of the semiconductor layer, at least a part of the upper insulating layer being mounted along the semiconductor layer; and a strip conductor formed at an upper surface of the upper insulating layer, at least a part of the strip conductor being mounted along the upper insulating layer.

Abstract translation: 用于信号线的结构具有信号线，其具有基底，形成在基底的上表面的下绝缘层，沿着位于下绝缘层上表面的路径设置的半导体层，至少部分 被配置为透射信号的半导体层，形成在所述半导体层的上表面的上绝缘层，所述上绝缘层的至少一部分沿着所述半导体层安装; 以及形成在所述上绝缘层的上表面处的带状导体，所述带状导体的至少一部分沿着所述上绝缘层安装。

公开(公告)号：US08691610B1

公开(公告)日：2014-04-08

申请号：US13826912

申请日：2013-03-14

Applicant: Dongbu HiTek Co., Ltd.

Inventor： Seong Hun Jeong ,  Ki Jun Yun ,  Oh Jin Jung

IPC: H01L21/00 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/461 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  G01P15/135 ,  H01H35/02 ,  H01H35/14 ,  G01P15/00

CPC classification number: H01L29/401 ,  B81B2201/018 ,  B81B2203/04 ,  B81C1/00166 ,  H01L29/41

Abstract: A method of manufacturing a semiconductor device including at least one of the following steps: (1) Forming a plurality of lower electrodes over a substrate. (2) Forming a first stop film over the lower electrodes. (3) Forming a filling layer over the first stop film. (4) Forming a second stop film over the filling layer. (5) Forming a first interlayer insulating layer over the second stop film. (6) Forming a plurality of upper electrodes over the first interlayer insulating layer. (7) Forming a second interlayer insulating layer over the upper electrodes. (8) Etching the second interlayer insulating layer and the first interlayer insulating layer to form a cavity. (9) Forming a contact ball in the cavity.

Abstract translation: 一种制造半导体器件的方法，包括以下步骤中的至少一个：（1）在衬底上形成多个下电极。 （2）在下电极上形成第一停止膜。 （3）在第一止挡膜上形成填充层。 （4）在填充层上形成第二停止膜。 （5）在第二止挡膜上形成第一层间绝缘层。 （6）在第一层间绝缘层上形成多个上电极。 （7）在上电极上形成第二层间绝缘层。 （8）蚀刻第二层间绝缘层和第一层间绝缘层以形成空腔。 （9）在空腔中形成接触球。

公开(公告)号：US20140009244A1

公开(公告)日：2014-01-09

申请号：US14001602

申请日：2012-03-20

Applicant: Christophe Pavageau

Inventor： Christophe Pavageau

IPC: H01P1/10

CPC classification number: H01P1/15 ,  B81B5/00 ,  B81B2201/018 ,  H01H1/0036 ,  H01H1/20 ,  H01H59/0009 ,  H01H2001/0063 ,  H01H2001/0084 ,  H01H2059/0072 ,  H01P1/127 ,  H01P3/003

Abstract: The RF MEMS crosspoint switch comprising a first transmission line and a second transmission line that crosses the first transmission line; the first transmission line comprises two spaced-apart transmission line portions, and a switch element that permanently electrically connects the said two spaced-apart transmission line portions; the second transmission line crosses the first transmission line between the two spaced-apart transmission line portions; the RF MEMS crosspoint switch further comprises actuation means for actuating the switch element at least between a first position, in which the switch element is electrically connecting the two spaced-apart transmission line portions of the first transmission line and the first and second transmission lines are electrically disconnected, and a second position, in which the switch element is electrically connecting the two spaced-apart transmission line portions of the first transmission line and is also electrically connecting the two transmission lines together.

Abstract translation: RF MEMS交叉点开关包括穿过第一传输线的第一传输线和第二传输线; 第一传输线包括两个间隔开的传输线部分，以及永久地电连接所述两个间隔开的传输线部分的开关元件; 第二传输线在两个间隔开的传输线部分之间穿过第一传输线; RF MEMS交叉点开关还包括用于至少在第一位置之间致动开关元件的致动装置，其中开关元件电连接第一传输线的两个间隔开的传输线部分和第一和第二传输线 以及第二位置，其中开关元件电连接第一传输线的两个间隔开的传输线部分，并且还将两个传输线电连接在一起。

公开(公告)号：US08470629B2

公开(公告)日：2013-06-25

申请号：US13189734

申请日：2011-07-25

Applicant: Mayumi Mikami ,  Konami Izumi

Inventor： Mayumi Mikami ,  Konami Izumi

IPC: H01L21/00 ,  H01L21/302

CPC classification number: H01H59/0009 ,  B81B2201/018 ,  B81C1/00166 ,  H01H1/58 ,  H01H2001/0052 ,  H01H2001/0057 ,  Y10T29/49155

Abstract: A structure which prevents thinning and disconnection of a wiring is provided, in a micromachine (MEMS structure body) formed with a surface micromachining technology. A wiring (upper auxiliary wiring) over a sacrificial layer is electrically connected to a different wiring (upper connection wiring) over the sacrificial layer, so that thinning, disconnection, and the like of the wiring formed over the sacrificial layer at a step portion generated due to the thickness of the sacrificial layer can be prevented. The wiring over the sacrificial layer is formed of the same conductive film as an upper driving electrode which is a movable electrode and is thus thin. However, the different wiring is formed over a structural layer, which is formed by a CVD method and has a rounded step, and has a thickness of 200 nm to 1 μm, whereby thinning, disconnection, and the like of the wiring can be further prevented.

Abstract translation: 在形成有表面微机械加工技术的微型机械（MEMS机构）中，提供了防止配线断线和断线的结构。 在牺牲层之上的布线（上辅助布线）在牺牲层上电连接到不同的布线（上连接布线），从而在生成的台阶部分上形成在牺牲层上的布线的变薄，断开等 由于可以防止牺牲层的厚度。 牺牲层上的布线由与作为可动电极的上驱动电极相同的导电膜形成，因此薄。 然而，不同的布线形成在通过CVD法形成并具有圆形台阶的结构层上，并且具有200nm至1μm的厚度，由此可以进一步布线的变薄，断开等 防止了

公开(公告)号：US08440523B1

公开(公告)日：2013-05-14

申请号：US13313163

申请日：2011-12-07

Applicant: Michael A Guillorn ,  Fei Liu ,  Ying Zhang

Inventor： Michael A Guillorn ,  Fei Liu ,  Ying Zhang

IPC: H01L21/8242

CPC classification number: B81C1/00396 ,  B81B2201/018 ,  B81B2207/015 ,  B81C1/00476 ,  B81C1/00801 ,  B81C2201/0132 ,  H01H1/0036 ,  H01H1/0094

Abstract: A method is disclosed to fabricate an electro-mechanical device such as a MEMS or NEMS switch. The method includes providing a structure composed of a silicon layer disposed over an insulating layer that is disposed on a silicon substrate. The silicon layer is differentiated into a partially released region that will function as a portion of the electro-mechanical device. The method further includes forming a dielectric layer over the silicon layer; forming a hardmask over the dielectric layer, the hardmask being composed of hafnium oxide; opening a window to expose the partially released region; and fully releasing the partially released region using a dry etching process to remove the insulating layer disposed beneath the partially released region while using the hardmask to protect material covered by the hardmask. The step of fully releasing can be performed using a HF vapor.

Abstract translation: 公开了一种制造诸如MEMS或NEMS开关的机电装置的方法。 该方法包括提供由设置在硅衬底上的绝缘层上的硅层构成的结构。 硅层被分化为部分释放的区域，其将用作机电装置的一部分。 该方法还包括在硅层上形成电介质层; 在介电层上形成硬掩模，硬掩模由氧化铪组成; 打开窗户露出部分释放的地区; 并且使用干蚀刻工艺完全释放部分释放的区域，以在使用硬掩模来去除设置在部分释放区域下方的绝缘层以保护由硬掩模覆盖的材料。 完全释放的步骤可以使用HF蒸汽进行。

公开(公告)号：US20130048480A1

公开(公告)日：2013-02-28

申请号：US13580391

申请日：2010-12-09

Applicant: Junya Yamamoto ,  Koji Narise

Inventor： Junya Yamamoto ,  Koji Narise

IPC: H01H9/54 ,  H01P3/08 ,  H01L21/762

CPC classification number: H01P3/081 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2203/0136 ,  H01H59/0009 ,  H01H2001/0078 ,  H01P1/127

Abstract: A structure for a signal line has the signal line having a base, a lower insulating layer formed at an upper surface of the base, a semiconductor layer disposed along a pathway at an upper surface of the lower insulating layer, at least a part of the semiconductor layer configured to transmit a signal, an upper insulating layer formed at an upper surface of the semiconductor layer, at least a part of the upper insulating layer being mounted along the semiconductor layer; and a strip conductor formed at an upper surface of the upper insulating layer, at least a part of the strip conductor being mounted along the upper insulating layer.

Abstract translation: 用于信号线的结构具有信号线，其具有基底，形成在基底的上表面的下绝缘层，沿着位于下绝缘层上表面的路径设置的半导体层，至少部分 被配置为透射信号的半导体层，形成在所述半导体层的上表面的上绝缘层，所述上绝缘层的至少一部分沿着所述半导体层安装; 以及形成在所述上绝缘层的上表面处的带状导体，所述带状导体的至少一部分沿着所述上绝缘层安装。