Method for applying selectively a layer to a structured substrate by the usage of a temperature gradient in the substrate
    51.
    发明授权
    Method for applying selectively a layer to a structured substrate by the usage of a temperature gradient in the substrate 有权
    通过在衬底中使用温度梯度将层选择性地施加到结构化衬底的方法

    公开(公告)号:US07955645B2

    公开(公告)日:2011-06-07

    申请号:US11791549

    申请日:2005-11-23

    Abstract: A semiconductor wafer (10) is structured such that fine structures (3), such as membranes, bridges or tongues, with a thickness d

    Abstract translation: 半导体晶片(10)被构造为形成具有厚度d << D的精细结构(如膜,桥或舌),其中D表示半导体晶片(10)的厚度。 然后施加所需材料的颗粒。 在半导体晶片(10)中产生时间或空间温度梯度,例如。 通过逐步加热。 在这样的加热过程中,由于微细结构具有比每个面积小的热容量并且不能快速地传递热量,所以细微结构比其余的晶片更加快速地变热,变得更热。 以这种方式,可以将精细结构加热到允许颗粒烧结的温度。 为了涂覆,使半导体晶片(10)进入反应器(11)。 提供金属的前体化合物并将其进料到反应器(11),在反应器(11)中发生反应,在该反应过程中金属被转化成最终的化合物,并以颗粒的形式沉积在半导体晶片(10)上。

    Device comprising a field of tips used in biotechnology applications
    52.
    发明授权
    Device comprising a field of tips used in biotechnology applications 有权
    装置包括生物技术应用中使用的尖端领域

    公开(公告)号:US07915176B2

    公开(公告)日:2011-03-29

    申请号:US11478858

    申请日:2006-06-30

    Abstract: A method for manufacturing a device including a field of micrometric tips, including forming a polycrystalline layer on a support; performing an anisotropic plasma etching of all or part of the polycrystalline layer by using a gas mixture including chlorine and helium, whereby tips are formed at the surface of the polycrystalline layer.

    Abstract translation: 一种制造包括微量尖端领域的装置的方法,包括在支撑体上形成多晶层; 通过使用包含氯和氦的气体混合物对多晶层的全部或部分进行各向异性等离子体蚀刻,由此在多晶层的表面形成尖端。

    METHOD OF DOPING AND APPARATUS FOR DOPING
    57.
    发明申请
    METHOD OF DOPING AND APPARATUS FOR DOPING 审中-公开
    剔除方法和装置

    公开(公告)号:US20100266768A1

    公开(公告)日:2010-10-21

    申请号:US12734996

    申请日:2008-08-27

    Inventor: Abu Samah Zuruzi

    Abstract: A method of doping at least one element in an array of elements on a substrate is disclosed. The method comprises providing at least one microfluidic channel passing from a first location external of the at least one element to a second location in fluidic communication with the at least one element. A dopant fluid is passed through the at least one microfluidic channel to the at least one element for doping the at least one element. A corresponding apparatus is also disclosed.

    Abstract translation: 公开了一种在衬底上的元件阵列中掺杂至少一种元素的方法。 该方法包括提供至少一个从至少一个元件外部的第一位置通过至少与一个元件流体连通的第二位置的微流体通道。 掺杂剂流体通过至少一个微流体通道至至少一个元件以掺杂至少一个元件。 还公开了相应的装置。

    Semiconductor sensor having heater on insulation film and manufacturing method of the same
    58.
    发明申请
    Semiconductor sensor having heater on insulation film and manufacturing method of the same 有权
    具有隔热膜加热器的半导体传感器及其制造方法

    公开(公告)号:US20100005877A1

    公开(公告)日:2010-01-14

    申请号:US12458272

    申请日:2009-07-07

    CPC classification number: B81B7/0012 B81B2201/0214 G01F1/6845 G01F1/692

    Abstract: A sensor includes: a silicon substrate having a hollow portion, which is arranged on a backside of the substrate; an insulation film disposed on a front side of the substrate and covering the hollow portion; a heater disposed on the insulation film, made of a semiconductor layer, and configured to generate heat; and an anti-stripping film for protecting the insulation film from being removed from the silicon substrate. The silicon substrate, the insulation film and the. semiconductor layer provide a SOI substrate. The hollow portion has a sidewall and a bottom. The anti-stripping film covers at least a boundary between the sidewall and the bottom of the hollow portion.

    Abstract translation: 传感器包括:具有中空部分的硅衬底,其设置在衬底的背面; 绝缘膜,设置在所述基板的前侧并覆盖所述中空部; 设置在绝缘膜上的加热器,由半导体层制成,并且被配置为产生热量; 以及用于保护绝缘膜不被从硅衬底移除的防剥离膜。 硅衬底,绝缘膜和。 半导体层提供SOI衬底。 中空部分具有侧壁和底部。 防剥离膜至少覆盖中空部分的侧壁和底部之间的边界。

Patent Agency Ranking