公开(公告)号：US06713312B2

公开(公告)日：2004-03-30

申请号：US10141586

申请日：2002-05-08

Applicant: Guy T. Blalock ,  Sanh D. Tang ,  Zhaohui Huang

Inventor： Guy T. Blalock ,  Sanh D. Tang ,  Zhaohui Huang

IPC: H01L2100

CPC classification number: H01J1/304 ,  H01J1/3044 ,  H01J31/127 ,  H01J2201/30446

Abstract: A method for fabricating field emitters from a conductive or semiconductive substrate. A layer of low work function material may be formed on the substrate. Emission tips that include such a low work function material may have improved performance. An etch mask appropriate for forming emission tips is patterned at desired locations over the substrate and any low work function material thereover. An anisotropic etch of at least the substrate is conducted to form vertical columns therefrom. A sacrificial layer may then be formed over the vertical columns. A facet etch of each vertical column forms an emission tip of the desired shape. If a sacrificial layer was formed over the vertical columns prior to formation of emission tips therefrom, the remaining material of the sacrificial layer may be utilized to facilitate the removal of any redeposition materials formed during the facet etch.

Abstract translation: 一种用于从导电或半导体衬底制造场致发射体的方法。 可以在基板上形成低功函数材料层。 包括这种低功函数材料的排放尖端可能具有改进的性能。 适合于形成发射尖端的蚀刻掩模被图案化在衬底上的所需位置和其上的任何低功函数材料。 进行至少衬底的各向异性蚀刻以形成垂直柱。 然后可以在垂直列上形成牺牲层。 每个垂直柱的刻面蚀刻形成所需形状的发射尖端。 如果在形成发射尖端之前在垂直列上形成牺牲层，则牺牲层的剩余材料可用于促进去除在刻面蚀刻期间形成的任何再沉积材料。

公开(公告)号：US06692323B1

公开(公告)日：2004-02-17

申请号：US09483409

申请日：2000-01-14

Applicant: Behnam Moradi ,  Tian Zhang ,  John Lee

Inventor： Behnam Moradi ,  Tian Zhang ,  John Lee

IPC: H01J902

CPC classification number: H01J1/3044 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2329/00

Abstract: A structure and method are provided to inhibit degradation to the electron beam of a field emitter device by coating the field emitter tip with a substance or a compound. The substance or compound acts in the presence of outgassing to inhibit such degradation. In one embodiment, the substance or compound coating the field emitter tip is stable in the presence of outgassing. In another embodiment, the substance or compound decomposes at least one matter in the outgassing. In yet another embodiment, the substance or compound neutralizes at least one matter in the outgassing. In a further embodiment, the substance or compound brings about a catalysis in the presence of outgassing.

Abstract translation: 提供了一种结构和方法，通过用物质或化合物涂覆场致发射极尖端来抑制场发射器件的电子束的劣化。 物质或化合物在除气的作用下起作用以抑制这种降解。 在一个实施方案中，涂覆场发射器尖端的物质或化合物在除气的存在下是稳定的。 在另一个实施方案中，物质或化合物在除气中分解至少一种物质。 在另一个实施方案中，物质或化合物在除气中中和至少一种物质。 在另一个实施方案中，物质或化合物在除气的存在下引起催化。

公开(公告)号：US06683399B2

公开(公告)日：2004-01-27

申请号：US09681703

申请日：2001-05-23

Applicant: Donald A. Shiffler, Jr.

Inventor： Donald A. Shiffler, Jr.

IPC: H01J1906

CPC classification number: H01J1/304 ,  H01J2201/30446

Abstract: A field emission cold cathode for use in vacuum tubes. A carbon velvet material is coated with a low work function cesiated salt and bonded to a cathode surface. The cathode will emit electrons when an electric field is applied. The carbon velvet material is comprised of high aspect ratio carbon fibers embedded perpendicular to a base material.

Abstract translation: 用于真空管的场致发射冷阴极。 碳丝绒材料涂覆有低功函数的切割盐并结合到阴极表面。 当施加电场时，阴极将发射电子。 碳丝绒材料由垂直于基材的高纵横比碳纤维组成。

公开(公告)号：US20030025431A1

公开(公告)日：2003-02-06

申请号：US09917663

申请日：2001-07-31

Inventor： Pehr Pehrsson ,  James Butler

IPC: H01J001/02 ,  H01J001/14 ,  H01J001/30

CPC classification number: B82Y10/00 ,  H01J1/3044 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30457

Abstract: A method for fabricating an electron emitter is provided. This emitter structure may be used to form individual emitters or arrays of emitters. The method is comprised of implanting energetic ions into a diamond lattice to form cones or other continuous regions of damaged diamond. These regions are more electrically conducting than the surrounding diamond lattice, and have locally sharp tips at or near the point of entry of the ion into the diamond. The tips may then also be additionally coated with a layer of a wide band-gap semiconductor. An electrically conducting material may also be placed in proximity to the tips to generate an electric field sufficient to extract electrons from the conducting tips into either the region above the surface, or into the wide band-gap semiconductor layer in contact with the tips. Electrical contact is made to the electrically conducting damage tracks and the electrical circuit may be completed with an electrically conducting material on the surface of the wide band-gap semiconductor or diamond, or in the ambient above the surface of the emitter. The surface of the wideband gap semiconductor or diamond may be chemically modified to enhance the emission of electrons from the surface.

Abstract translation: 提供一种制造电子发射器的方法。 该发射器结构可以用于形成发射器的单独发射器或阵列。 该方法包括将能量离子注入到金刚石晶格中以形成损坏金刚石的锥体或其它连续区域。 这些区域比周围的金刚石晶格更具导电性，并且在离子进入金刚石的位置处或附近具有局部尖锐的尖端。 然后可以另外涂覆一层宽带隙半导体的尖端。 还可以将导电材料放置在靠近尖端处以产生足以将电子从导电尖端引入到表面上方的区域中的电场，或者与尖端接触的宽带隙半导体层中。 对导电损伤轨道进行电接触，并且电路可以在宽带隙半导体或金刚石的表面上或在发射器表面上的环境中的导电材料完成。 宽带隙半导体或金刚石的表面可以被化学修饰以增强从表面发射电子。

公开(公告)号：US20020175609A1

公开(公告)日：2002-11-28

申请号：US09681703

申请日：2001-05-23

Inventor： Donald A. Shiffler JR.

IPC: H01J001/05

CPC classification number: H01J1/304 ,  H01J2201/30446

Abstract: PRS0729A field emission cold cathode for use in vacuum tubes. A carbon velvet material is coated with a low work function cesiated salt and bonded to a cathode surface. The cathode will emit electrons when an electric field is applied. The carbon velvet material is comprised of high aspect ratio carbon fibers embedded perpendicular to a base material.

Abstract translation: PRS0729A真空管用场致冷阴极。 碳丝绒材料涂覆有低功函数的切割盐并结合到阴极表面。 当施加电场时，阴极将发射电子。 碳丝绒材料由垂直于基材的高纵横比碳纤维组成。

公开(公告)号：US20020127750A1

公开(公告)日：2002-09-12

申请号：US10141586

申请日：2002-05-08

Inventor： Guy T. Blalock ,  Zhaohui Huang ,  Sanh D. Tang

IPC: H01L021/00

CPC classification number: H01J1/304 ,  H01J1/3044 ,  H01J31/127 ,  H01J2201/30446

Abstract: A method for fabricating field emitters from a conductive or semiconductive substrate. A layer of low work function material may be formed on the substrate. Emission tips that include such a low work function material may have improved performance. An etch mask appropriate for forming emission tips is patterned at desired locations over the substrate and any low work function material thereover. An anisotropic etch of at least the substrate is conducted to form vertical columns therefrom. A sacrificial layer may then be formed over the vertical columns. A facet etch of each vertical column forms an emission tip of the desired shape. If a sacrificial layer was formed over the vertical columns prior to formation of emission tips therefrom, the remaining material of the sacrificial layer may be utilized to facilitate the removal of any redeposition materials formed during the facet etch.

公开(公告)号：US06281626B1

公开(公告)日：2001-08-28

申请号：US09271138

申请日：1999-03-17

Applicant: Osamu Nakamura ,  Shigemi Suzuki ,  Yuichi Mori ,  Hironori Hirama

Inventor： Osamu Nakamura ,  Shigemi Suzuki ,  Yuichi Mori ,  Hironori Hirama

IPC: H01J130

CPC classification number: H01J9/022 ,  H01J1/30 ,  H01J17/066 ,  H01J61/0675 ,  H01J2201/30446

Abstract: An yttrium film is formed on the surface of a substrate made of an Ni—Cr-based material by deposition or sputtering using resistance heating or an electron beam. The yttrium film is heated in an inert gas atmosphere containing a very small amount of hydrogen to hydrogenate yttrium. The resultant yttrium hydride is excellent as a cold emission material for a cold emission electrode and can be used for a cold emission discharge fluorescent tube.

Abstract translation: 通过使用电阻加热或电子束的沉积或溅射在由Ni-Cr基材料制成的基板的表面上形成钇膜。 将钇膜在含有非常少量氢的惰性气体气氛中加热以氢化钇。 所得的氢化钇作为冷发射电极的冷发射材料是优异的，可用于冷发射放电荧光管。

公开(公告)号：US20010006321A1

公开(公告)日：2001-07-05

申请号：US09754273

申请日：2001-01-05

Inventor： Jun-hee Choi ,  Seung-nam Cha ,  Hang-woo Lee

IPC: H01J001/16 ,  H01L023/48 ,  H01L023/52 ,  H01L029/40

CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J2201/30407 ,  H01J2201/30446

Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features. Due to the micro-tips as a collection of a large number of nano-tips, the FED is operable at low gate turn-on voltages with high emission current densities, thereby lowering power consumption.

Abstract translation: 提供场发射装置（FED）和制造FED的方法。 FED包括具有纳米尺寸表面特征的微型尖端。 由于微尖作为大量纳米尖端的集合，所以FED可在具有高发射电流密度的低栅极导通电压下工作，从而降低功耗。

公开(公告)号：US06181055B2

公开(公告)日：2001-01-30

申请号：US09169909

申请日：1998-10-12

Applicant: Donald E. Patterson ,  Keith D. Jamison

Inventor： Donald E. Patterson ,  Keith D. Jamison

IPC: H01J102

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30446

Abstract: An electron field emission device is provided by placing a substrate in a reactor, heating the substrate and supplying a mixture of hydrogen and a carbon-containing gas at a concentration of about 8 to 13 per cent to the reactor while supplying energy to the mixture of gases near the substrate for a time to grow a first layer of carbon-based material to a thickness greater than about 0.5 micrometers, subsequently reducing the concentration of the carbon-containing gas and continuing to grow a second layer of carbon-based material, the second layer being much thicker than the first layer. The substrate is subsequently removed from the first layer and an electrode is applied to the second layer. The device is free-standing and can be used as a cold cathode in a variety of electronic devices such as cathode ray tubes, amplifiers and traveling wave tubes. The surface of the substrate may be patterned before growth of the first layer to produce a patterned surface on the field emission device.

Abstract translation: 通过将基板放置在反应器中，加热基板并将浓度约为8％至13％的含碳气体的混合物供应给反应器，同时向混合物中提供能量来提供电子场发射装置， 靠近衬底的气体一段时间，以将第一层碳基材料生长至大于约0.5微米的厚度，随后降低含碳气体的浓度并继续生长第二层碳基材料， 第二层比第一层厚得多。 随后从第一层去除衬底，并将电极施加到第二层。 该器件是独立的，可用作各种电子器件如阴极射线管，放大器和行波管中的冷阴极。 可以在第一层生长之前对衬底的表面进行图案化以在场发射器件上产生图案化表面。

公开(公告)号：US6091186A

公开(公告)日：2000-07-18

申请号：US748690

申请日：1996-11-13

Applicant: Renyu Cao ,  Lawrence Pan ,  German Vergara ,  Ciaran Fox

Inventor： Renyu Cao ,  Lawrence Pan ,  German Vergara ,  Ciaran Fox

IPC: H01J1/30 ,  H01J19/24

CPC classification number: H01J1/30 ,  H01J2201/30446 ,  H01J2201/32 ,  H01J2201/342

Abstract: A cathode has electropositive atoms directly bonded to a carbon-containing substrate. Preferably, the substrate comprises diamond or diamond-like (sp.sup.3) carbon, and the electropositive atoms are Cs. The cathode displays superior efficiency and durability. In one embodiment, the cathode has a negative electron affinity (NEA). The cathode can be used for field emission, thermionic emission, or photoemission. Upon exposure to air or oxygen, the cathode performance can be restored by annealing or other methods. Applications include detectors, electron multipliers, sensors, imaging systems, and displays, particularly flat panel displays.

Abstract translation: 阴极具有直接键合到含碳衬底的正电原子。 优选地，衬底包括金刚石或类金刚石（sp3）碳，正电性原子是Cs。 阴极显示出优异的效率和耐久性。 在一个实施方案中，阴极具有负电子亲和力（NEA）。 阴极可用于场发射，热离子发射或光电发射。 暴露于空气或氧气时，阴极性能可通过退火或其他方法恢复。 应用包括检测器，电子倍增器，传感器，成像系统和显示器，特别是平板显示器。