公开(公告)号：US06815877B2

公开(公告)日：2004-11-09

申请号：US10194110

申请日：2002-07-11

Applicant: Ga-Lane Chen

Inventor： Ga-Lane Chen

IPC: H01J1906

CPC classification number: H01J1/3044 ,  B82Y10/00 ,  H01J2201/30469 ,  H01J2329/00

Abstract: A field emission display device (1) includes a cathode plate (20), an electrically resistive buffer (30) made from carbon formed on the cathode plate, electron emitters (40) made from carbon formed on the buffer, and an anode plate (50) spaced from the electron emitters thereby defining an interspace region therebetween. Each electron emitter includes a nano-rod. The combined buffer and electron emitters has a gradient distribution of electrical resistivity such that highest electrical resistivity is nearest the cathode plate and lowest electrical resistivity is nearest the anode plate. When emitting voltage is applied between the cathode and anode plates, electrons emitted from the electron emitters traverse the interspace region and are received by the anode plate. Because of the gradient distribution of electrical resistivity, only a very low emitting voltage needs to be applied. Other embodiments include single walled and multi-walled nanotubes (40′, 40″).

Abstract translation: 场发射显示装置（1）包括阴极板（20），由形成在阴极板上的碳制成的电阻缓冲器（30），由形成在缓冲器上的碳制成的电子发射器（40）和阳极板 50），从而在其间限定了间隙区域。 每个电子发射器包括纳米棒。 组合的缓冲器和电子发射器具有电阻率的梯度分布，使得最高电阻率最接近阴极板，最低电阻率最接近阳极板。 当在阴极和阳极板之间施加发射电压时，从电子发射器发射的电子穿过间隙区域并被阳极板接收。 由于电阻率的梯度分布，只需要施加非常低的发射电压。 其他实施例包括单壁和多壁纳米管（40'，40“）。

公开(公告)号：US06455990B1

公开(公告)日：2002-09-24

申请号：US09209629

申请日：1998-12-11

Applicant: Brian E. Mensinger

Inventor： Brian E. Mensinger

IPC: H01J1906

CPC classification number: H01J37/065 ,  H01J37/3053

Abstract: An apparatus for an electron gun includes a one piece thermionic electron source that extends in a longitudinal direction and has opposite end portions, an aperture disposed therebetween, and two longitudinal portions that extend in the longitudinal direction and are spaced apart from one another by the aperture and rigidly joined together by the opposite end portions. The thermionic electron source is less susceptible to ion bombardment and therefore has a longer operating life than previous ribbon type electron sources. Further, because the electron source is one piece, it does not require support and relative positioning of multiple emitters such as that required by an electron source having two separate and parallel emitters.

Abstract translation: 一种用于电子枪的装置包括一个沿长度方向延伸并且具有相对端部的一个热离子电子源，设置在它们之间的孔，以及沿着纵向方向延伸并且彼此间隔开的孔的两个纵向部分 并通过相对的端部刚性地连接在一起。 热离子电子源对离子轰击的影响较小，因此具有比以前的带状电子源更长的使用寿命。 此外，由于电子源是一体的，因此不需要多个发射体的支撑和相对定位，例如由具有两个分离和平行的发射器的电子源所要求的。

公开(公告)号：US06683399B2

公开(公告)日：2004-01-27

申请号：US09681703

申请日：2001-05-23

Applicant: Donald A. Shiffler, Jr.

Inventor： Donald A. Shiffler, Jr.

IPC: H01J1906

CPC classification number: H01J1/304 ,  H01J2201/30446

Abstract: A field emission cold cathode for use in vacuum tubes. A carbon velvet material is coated with a low work function cesiated salt and bonded to a cathode surface. The cathode will emit electrons when an electric field is applied. The carbon velvet material is comprised of high aspect ratio carbon fibers embedded perpendicular to a base material.

Abstract translation: 用于真空管的场致发射冷阴极。 碳丝绒材料涂覆有低功函数的切割盐并结合到阴极表面。 当施加电场时，阴极将发射电子。 碳丝绒材料由垂直于基材的高纵横比碳纤维组成。

公开(公告)号：US06255764B1

公开(公告)日：2001-07-03

申请号：US09298397

申请日：1999-04-23

Applicant: Jong-Seo Choi ,  Yoon-Chang Kim ,  Gyu-Nam Joo

Inventor： Jong-Seo Choi ,  Yoon-Chang Kim ,  Gyu-Nam Joo

IPC: H01J1906

CPC classification number: H01J1/20 ,  H01J1/142

Abstract: The present invention relates to a cathode for an electron gun for increasing its life cycle under a high current density load by ensuring a steady diffusion path of reducing component served for generating free radical barium. The present invention discloses a cathode for an electron gun comprising a base metal composed of nickel and at least one kind of reducing component, a metal layer having a recess to enlarge an overall surface area of the metal layer, the metal layer being disposed on the base metal, and an electron emitting layer containing alkaline earth metal oxide including at least barium. The cathode for an electron further comprises a second metal layer disposed on the lower side of the base metal.

Abstract translation: 本发明涉及一种用于电子枪的阴极，通过确保用于产生自由基钡的还原成分的稳定扩散路径，在高电流密度负载下增加其寿命周期。 本发明公开了一种电子枪用阴极，其特征在于，包括由镍构成的母材和至少一种还原成分，金属层，具有凹部以扩大金属层的整个表面积，金属层设置在 贱金属和含有至少包含钡的碱土金属氧化物的电子发射层。 用于电子的阴极还包括设置在贱金属下侧的第二金属层。

公开(公告)号：US06425793B1

公开(公告)日：2002-07-30

申请号：US09671689

申请日：2000-09-28

Applicant: Yoji Hasegawa ,  Shinji Ogawa ,  Daichi Imabayashi ,  Makoto Furukawa ,  Nobuyuki Yoshino ,  Junji Sato ,  Yoshirou Hirai ,  Naoto Ogasawara ,  Kuniyasu Kobayashi

Inventor： Yoji Hasegawa ,  Shinji Ogawa ,  Daichi Imabayashi ,  Makoto Furukawa ,  Nobuyuki Yoshino ,  Junji Sato ,  Yoshirou Hirai ,  Naoto Ogasawara ,  Kuniyasu Kobayashi

IPC: H01J1906

CPC classification number: H01J1/28

Abstract: An impregnated cathode and a method of manufacturing the same are provided for suppressing emission of unwanted electrons and particles generated from an excess electron emitting substance so as to achieve a steady electron emission characteristic. The impregnated cathode is placed directly beneath an electron emission hole of a first grid. The impregnated cathode is made up of a first sintered porous element whose surface functions as an electron emitting region and a second sintered porous element whose surface is a peripheral region other than the electron emitting region. The porosity of the first sintered porous element is greater than that of the second sintered porous element. Not only the first sintered porous element having the electron emitting region but also the second sintered porous element corresponding to the region around the electron emitting region is impregnated with the electron emitting substance. In addition, the amount of the electron emitting substance per unit volume contained in the first sintered porous element is greater than that contained in the second sintered porous element.

Abstract translation: 提供一种浸渍阴极及其制造方法，用于抑制由过量的电子发射物质产生的不想要的电子和颗粒的发射，以实现稳定的电子发射特性。 浸渍的阴极直接放置在第一栅极的电子发射孔的正下方。 浸渍的阴极由其表面用作电子发射区的第一烧结多孔元件和表面是除电子发射区以外的周边区的第二烧结多孔元组成。 第一烧结多孔元件的孔隙率大于第二烧结多孔元件的孔隙率。 不仅具有电子发射区的第一烧结多孔元件，而且与电子发射区周围的区域相对应的第二烧结多孔元件也被电子发射物质浸渍。 此外，包含在第一烧结多孔元件中的每单位体积的电子发射物质的量大于第二烧结多孔元件中包含的电子发射物质的量。

公开(公告)号：US06218771B1

公开(公告)日：2001-04-17

申请号：US09105488

申请日：1998-06-26

Applicant: Igor Berishev ,  Abdelhak Bensaoula

Inventor： Igor Berishev ,  Abdelhak Bensaoula

IPC: H01J1906

CPC classification number: H01J9/025 ,  H01J1/304

Abstract: Field emitter as a source of electrons and method for making are provided. The emitter is formed by growth of a nitride compound of a group III element or alloys of group III elements on a substrate having a lattice mismatch with the thin film. The lattice mismatch causes columnar growth in the film. The micro columns have tips, thus forming an array of crystalline microtips of the low work function nitride material. The nitride compound is doped during growth. Gallium nitride grown on (111) silicon and doped with silicon produces a surface having low threshold electric field for emission and high current per unit area.

Abstract translation: 提供作为电子源的场发射体和制造方法。 通过在具有与薄膜的晶格失配的衬底上生长III族元素的氮化物化合物或III族元素的合金来形成发射极。 晶格失配导致膜中的柱状生长。 微型柱具有尖端，从而形成低功函数氮化物材料的晶体微尖端阵列。 在生长过程中掺杂氮化物。 在（111）硅上生长并掺杂硅的氮化镓产生具有低阈值电场的表面，用于发射和每单位面积的高电流。

公开(公告)号：US06800990B2

公开(公告)日：2004-10-05

申请号：US09756865

申请日：2001-01-10

Applicant: Jong-Seo Choi ,  Hyek-Bok Lee ,  Kyu-Nam Joo ,  Yoon-Chang Kim

Inventor： Jong-Seo Choi ,  Hyek-Bok Lee ,  Kyu-Nam Joo ,  Yoon-Chang Kim

IPC: H01J1906

CPC classification number: H01J1/20 ,  H01J1/146

Abstract: The present invention provides a cathode material for an electron beam device. The cathode material is characterized by the fact that it includes 0.5-9.0% by weight of a rare earth metal of the cerium group, 0.5-15.0% by weight of tungsten or rhenium or both tungsten and rhenium, 0.5-10% by weight of carbon and the remainder of iridium. The cathode material according to the invention has excellent plasticity, can be easily used for manufacturing an emitter of a small size, has high electron emission power, and has a low operation temperature, thereby having a long lifetime, and it is therefore useful for a cathode material for an electron beam device.

Abstract translation: 本发明提供了一种用于电子束装置的阴极材料。 阴极材料的特征在于它包括0.5-9.0重量％的铈基稀土金属，0.5-15.0重量％的钨或铼，钨或铼，0.5-10重量％的钨， 碳和铱的剩余部分。 根据本发明的阴极材料具有优异的可塑性，可以容易地用于制造小尺寸的发射体，具有高的电子发射功率，并且具有低的操作温度，从而具有长的使用寿命，因此可用于 用于电子束装置的阴极材料。

公开(公告)号：US06798127B2

公开(公告)日：2004-09-28

申请号：US10680941

申请日：2003-10-07

Applicant: Dongsheng Mao ,  Richard Lee Fink ,  Zvi Yaniv

Inventor： Dongsheng Mao ,  Richard Lee Fink ,  Zvi Yaniv

IPC: H01J1906

CPC classification number: H01J1/304 ,  B82Y10/00 ,  C23C18/1204 ,  C23C18/127 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2209/0223 ,  H01J2329/0455 ,  Y10S977/939 ,  Y10S977/952

Abstract: The present invention is directed toward cathodes and cathode materials comprising carbon nanotubes (CNTs) and particles. The present invention is also directed toward field emission devices comprising a cathode of the present invention, as well as methods for making these cathodes. In some embodiments, the cathode of the present invention is used in a field emission display. The invention also comprises a method of depositing a layer of CNTs and particles onto a substrate to form a cathode of the present invention, as well as a method of controlling the density of CNTs used in this mixed layer in an effort to optimize the field emission properties of the resulting layer for field emission display applications.

公开(公告)号：US06603250B2

公开(公告)日：2003-08-05

申请号：US09940207

申请日：2001-08-27

Applicant: John W. Shaffer

Inventor： John W. Shaffer

IPC: H01J1906

CPC classification number: H01J61/0677 ,  H01J1/142

Abstract: An arc discharge lamp has an evacuated, electromagnetic-energy-transmissive envelope having therein an arc generating and sustaining medium. At least one thermionic, electron-emitting cathode is positioned within the envelope, and the cathode has an electron emissive coating thereon containing silicon carbide.

公开(公告)号：US06310432B1

公开(公告)日：2001-10-30

申请号：US09396343

申请日：1999-09-15

Applicant: Zhidan Li Tolt ,  Zvi Yaniv ,  Richard Lee Fink

Inventor： Zhidan Li Tolt ,  Zvi Yaniv ,  Richard Lee Fink

IPC: H01J1906

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J9/025

Abstract: A film (carbon and/or diamond) for a field emitter device, which may be utilized within a computer display, is produced by a process utilizing treatment of a substrate and then depositing the film. The treatment step creates nucleation and growth sites on the substrate for the film deposition process and promotes election emission of the deposited film. With this process, a patterned emission can be achieved without post-deposition processing of the film. A field emitter device can be manufactured with such a film.