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    Irradiation system with ion beam
    52.
    发明申请
    Irradiation system with ion beam 有权
    离子束照射系统

    公开(公告)号：US20060113466A1

    公开(公告)日：2006-06-01

    申请号：US11202100

    申请日：2005-08-12

    Applicant: Mitsuaki Kabasawa ,  Mitsukuni Tsukihara ,  Hiroshi Sogabe

    Inventor： Mitsuaki Kabasawa ,  Mitsukuni Tsukihara ,  Hiroshi Sogabe

    IPC: B01D59/44

    CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/023 ,  H01J37/05 ,  H01J37/09 ,  H01J37/1474 ,  H01J37/1478 ,  H01J37/15 ,  H01J37/3007 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/0458 ,  H01J2237/047 ,  H01J2237/0492 ,  H01J2237/061 ,  H01J2237/0835 ,  H01J2237/1536 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/30477 ,  H01J2237/31705

    Abstract: An irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a deflector for scanning which swings the beam reciprocally, a beam parallelizing device, an acceleration/deceleration device, and an energy filtering device. According to this invention, a hybrid angular energy filter generating both electric and magnetic fields to bend trajectories is provided as the energy filtering device. A pair of multi-surface energy slit units each having a plurality of energy slits that are switchable therebetween depending on an ion species for irradiation are further provided on a downstream side of the hybrid angular energy filter. It is possible to selectively irradiate a target wafer with high-current beams from low energy to high energy in the conditions where contamination such as neutral particles, different kinds of dopants, ions with different energies, metal, and dust particles is extremely small in amount.

    Abstract translation: 照射系统包括光束产生源，质量分析装置，光束变换器，用于使光束往复摆动的扫描偏转器，光束并行化装置，加速/减速装置以及能量过滤装置。 根据本发明，提供了产生电场和磁场以弯曲轨迹的混合角能量滤波器作为能量过滤装置。 在混合角能量滤波器的下游侧还设置有一对多表面能量狭缝单元，其具有可根据用于照射的离子种类在其间切换的多个能量狭缝。 在诸如中性粒子，不同种类的掺杂剂，具有不同能量的离子，金属和灰尘颗粒的污染物的量非常小的条件下，可以从具有低能量到高能量的大电流束选择性地照射目标晶片 。

    Biased electrostatic deflector
    54.
    发明授权
    Biased electrostatic deflector 有权
    偏置静电导流板

    公开(公告)号：US07022984B1

    公开(公告)日：2006-04-04

    申请号：US11047238

    申请日：2005-01-31

    Applicant: Robert D. Rathmell ,  Bo H. Vanderberg ,  Youngzhang Huang

    Inventor： Robert D. Rathmell ,  Bo H. Vanderberg ,  Youngzhang Huang

    IPC: H01J40/00 ,  H01J47/00 ,  G21G51/00

    CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J2237/053 ,  H01J2237/303 ,  H01J2237/31705

    Abstract: Angular electrostatic filters and methods of filtering that remove energy contaminants from a ribbon shaped ion beam are disclosed. An angular electrostatic filter comprises a top deflection plate and a bottom deflection plate extending from an entrance side to an exit side of the filter. The bottom deflection plate is substantially parallel to the top deflection plate and includes an angle portion. An entrance focus electrode is positioned on the entrance side of the filter and an exit focus electrode is positioned on the exit side of the filter and both serve to focus the ion beam. Edge electrodes are positioned between the top and bottom deflection plates and at sides of the filter to mitigate edge effects. A negative bias is also applied to the top and bottom plates to mitigate space charge by elevating the beam energy.

    Abstract translation: 公开了角膜静电过滤器和从带状离子束去除能量污染物的过滤方法。 角度静电过滤器包括顶部偏转板和从过滤器的入口侧到出口侧延伸的底部偏转板。 底部偏转板基本上平行于顶部偏转板并且包括角部分。 入口聚焦电极位于过滤器的入口侧，出射聚焦电极位于过滤器的出口侧，并且两者都用于聚焦离子束。 边缘电极位于顶部和底部偏转板之间以及位于过滤器侧面以减轻边缘效应。 顶板和底板也施加负偏压，以通过提升光束能量来减轻空间电荷。

    Ion implanter having two-stage deceleration beamline
    55.
    发明授权
    Ion implanter having two-stage deceleration beamline 有权
    离子注入机具有两级减速束线

    公开(公告)号：US06998625B1

    公开(公告)日：2006-02-14

    申请号：US09602059

    申请日：2000-06-23

    Applicant: Charles M. McKenna ,  Nicholas R. White ,  Douglas A. Brown ,  Edward Bell ,  Svetlana Radovanov

    Inventor： Charles M. McKenna ,  Nicholas R. White ,  Douglas A. Brown ,  Edward Bell ,  Svetlana Radovanov

    IPC: G21K5/10 ,  H01J37/08

    CPC classification number: H01J37/3171 ,  H01J2237/0041 ,  H01J2237/022 ,  H01J2237/047 ,  H01J2237/31705

    Abstract: An ion implanter includes an ion source for generating an ion beam, an analyzer for separating unwanted components from the ion beam, a first beam transport device for transporting the ion beam through the analyzer at a first transport energy, a first deceleration stage positioned downstream of the analyzer for decelerating the ion beam from the first transport energy to a second transport energy, a beam filter positioned downstream of the first deceleration stage for separating neutral particles from the ion beam, a second beam transport device for transporting the ion beam through the beam filter at the second transport energy, a second deceleration stage positioned downstream of the beam filter for decelerating the ion beam from the second transport energy to a final energy, and a target site for supporting a target for ion implantation. The ion beam is delivered to the target site at the final energy. In a double deceleration mode, the second transport energy is greater than the final energy for highest current at low energy. In an enhanced drift mode, the second transport energy is equal to the final energy for highest beam purity at low energy.

    Abstract translation: 离子注入机包括用于产生离子束的离子源，用于从离子束分离不需要的组分的分析器，用于以第一输送能量输送离子束通过分析器的第一束输送装置，位于离子束下游的第一减速阶段 用于将离子束从第一输送能量减速到第二输送能量的分析器，位于第一减速阶段下游的用于从离子束分离中性粒子的光束过滤器，用于将离子束传送通过束 在所述第二输送能量下进行过滤，所述第二减速阶段位于所述束过滤器的下游，用于将所述离子束从所述第二输送能量减速到最终能量，以及用于支撑用于离子注入的靶的靶位点。 离子束以最终能量传递到目标位置。 在双重减速模式中，第二传输能量大于最低能量时的最终能量。 在增强的漂移模式中，第二传输能量等于在低能量下最高光束纯度的最终能量。

    Ion implanter system, method and program product including particle detection
    56.
    发明授权
    Ion implanter system, method and program product including particle detection 有权
    离子注入机系统，方法和程序产品，包括粒子检测

    公开(公告)号：US06909102B1

    公开(公告)日：2005-06-21

    申请号：US10761768

    申请日：2004-01-21

    Applicant: Paul S. Buccos

    Inventor： Paul S. Buccos

    IPC: H01J37/244 ,  H01J37/304 ,  H01J37/317

    CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/30455 ,  H01J2237/31703 ,  H01J2237/31705

    Abstract: An ion implanter system, method and program product for detecting at least one particle level in an beam and controlling the ion beam based on the at least one particle level during any stage of operation including ion implantation. A bright-field laser particle detector is employed that transmits and receives the laser beam directly through at least a portion of the ion beam to obtain an accurate particle level. The invention allows for observance of ion beam-borne particles and correction of the ion beam by a system controller in real-time to minimize particle level(s). During ion implantation, processing may be stopped until particle level(s) are below a preset value. The invention allows particle level detection during implantation such that post implant steps to check wafer particle levels are unnecessary.

    Abstract translation: 一种离子注入机系统，方法和程序产品，用于在包括离子注入的任何操作阶段期间基于所述至少一个粒子水平来检测束中的至少一个粒子水平并控制所述离子束。 采用明场激光粒子检测器，其通过至少一部分离子束直接透射和接收激光束，以获得准确的粒子水平。 本发明允许遵循离子束传播的颗粒并且通过系统控制器实时校正离子束以使颗粒水平最小化。 在离子注入期间，可以停止处理，直到粒子水平低于预设值。 本发明允许在植入期间的粒子水平检测，使得不需要后期植入步骤来检查晶片颗粒水平。

    Method of controlling implant dosage and pressure compensation factor in-situ
    57.
    发明申请
    Method of controlling implant dosage and pressure compensation factor in-situ 有权
    原位控制植入剂量和压力补偿因子的方法

    公开(公告)号：US20050092940A1

    公开(公告)日：2005-05-05

    申请号：US10966595

    申请日：2004-10-14

    Applicant: Heng-Kai Hsu ,  Yu-Chi Chen

    Inventor： Heng-Kai Hsu ,  Yu-Chi Chen

    IPC: G21K5/10 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265

    CPC classification number: H01J37/3171 ,  H01J2237/004 ,  H01J2237/18 ,  H01J2237/31703 ,  H01J2237/31705

    Abstract: A method of controlling the implant dosage is provided. First, the residual gases within an ion implant station are analyzed and the partial pressure of each residual gas is measured. Thereafter, the current Im of the ion beam is measured and the real dosage Ir of the ion beam implanted into a wafer is calculated. Since all the residual gases in the ion implant station are considered, the implanting dosage can be accurately controlled.

    Abstract translation: 提供了一种控制种植体剂量的方法。 首先，分析离子注入站内的残留气体，并测量每个残留气体的分压。 此后，测量离子束的电流Im，并计算注入到晶片中的离子束的实际剂量Ir。 由于考虑了离子注入站中的所有残留气体，因此可以精确地控制植入剂量。

    Ion implantation ion source, system and method
    59.
    发明申请
    Ion implantation ion source, system and method 有权

    公开(公告)号：US20040245476A1

    公开(公告)日：2004-12-09

    申请号：US10887425

    申请日：2004-07-08

    Applicant: SemEquip, Inc.

    Inventor： Thomas Neil Horsky ,  John Noel Williams

    IPC: H01J027/00 ,  G21K005/10

    CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

    Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hxnull; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hxnull; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

    Ion implantation system and control method
    60.
    发明申请
    Ion implantation system and control method 失效
    离子注入系统和控制方法

    公开(公告)号：US20040104682A1

    公开(公告)日：2004-06-03

    申请号：US10433493

    申请日：2004-01-08

    Inventor： Thomas N. Horsky ,  Brian F. Cohen ,  Wade A. Krull ,  George P. Sacco Jr.

    IPC: H01J007/24 ,  H01K001/62

    CPC classification number: H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/0812 ,  H01J2237/082 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/26566 ,  H01L21/2658 ,  H01L29/6659

    Abstract: Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are maintained that produce a substantial ion density and limit the transverse kinetic energy of the ions to less than 0.7 eV; width of the ionization volume adjacent the aperture is limited to width less than about three times the width of the aperture; the aperture is extremely elongated; magnetic fields are avoided or limited; low ion beam noise is maintained; conditions within the ionization chamber are maintained that prevent formation of an arc discharge. With ion beam optics, such as the batch implanter of FIG. (20), or in serial implanters, ions from the ion source are transported to a target surface and implanted; advantageously, in some cases, in conjunction with acceleration-deceleration beam lines employing cluster ion beams. Also disclosed are electron gun constructions, ribbon sources for electrons and ionization chamber configurations. Forming features of semiconductor devices, e.g. drain extensions of CMOS devices, and doping of flat panels are shown.

    Abstract translation: 具有高亮度的离子注入，通过电离气体或蒸气的离子束，例如， 通过与离子化室（80; 175）的出口孔（46,176）相邻的直接电子碰撞电离，产生二聚体或十硼烷。 优选地，维持产生大量离子密度并且将离子的横向动能限制在小于0.7eV的条件; 邻近孔径的电离体积的宽度被限制为小于孔的宽度的约三倍的宽度; 孔径非常细长; 避免或限制磁场; 保持低离子束噪声; 维持电离室内的条件，防止形成电弧放电。 使用离子束光学器件，例如图1的批量注入机。 （20）或串联注入器中，离子源的离子被输送到目标表面并植入; 有利地，在一些情况下，结合使用簇离子束的加速 - 减速束线。 还公开了电子枪结构，用于电子和电离室配置的带状源。 形成半导体器件的特征。 示出了CMOS器件的漏极延伸和平板的掺杂。

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