公开(公告)号：US20240170251A1

公开(公告)日：2024-05-23

申请号：US17993566

申请日：2022-11-23

Applicant: Applied Materials, Inc.

Inventor： William Herron Park, JR. ,  Charles T. Carlson ,  Luke Bonecutter

IPC: H01J37/317 ,  C23C14/48

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J2237/0473

Abstract: An ion implantation system including an ion source for generating an ion beam, an end station for holding a substrate to be implanted by the ion beam, and a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator including at least one acceleration stage including a resonator and a resonator coil disposed within a resonator chamber, wherein the resonator coil is a tubular body having a plurality of coaxial layers, including an inner layer, a middle layer, and an outer layer, wherein the outer layer is formed of a dielectric material.

公开(公告)号：US20230317403A1

公开(公告)日：2023-10-05

申请号：US18188458

申请日：2023-03-23

Applicant: SUMITOMO HEAVY INDUSTRIES, LTD.

Inventor： Takuya FUKUURA ,  Masaru NAKAKITA

IPC: H01J37/09 ,  B23B1/00 ,  A61N5/10

CPC classification number: H01J37/09 ,  B23B1/00 ,  A61N5/1045 ,  H01J2237/0473 ,  H01J2237/002 ,  A61N2005/1094 ,  A61N2005/1087

Abstract: A particle beam irradiation apparatus includes: an accelerator accelerating a particle so as to generate a particle beam; an irradiation unit irradiating an irradiation target with the particle beam; a transport path provided between the accelerator and the irradiation unit and provided so as to be capable of transporting the particle beam; and a collimator device having a first shielding member provided in the transport path, shielding the particle beam, and having a first opening allowing the particle beam to pass in an advancing direction of the particle beam and a second shielding member provided in the transport path, shielding the particle beam, and having a second opening allowing the particle beam to pass in the advancing direction of the particle beam, in which the second shielding member is spaced from the first shielding member to a downstream side in the advancing direction of the particle beam.

公开(公告)号：US20230253175A1

公开(公告)日：2023-08-10

申请号：US18015554

申请日：2021-04-13

Applicant: Hitachi, Ltd.

Inventor： Kenta TAKAHASHI ,  Satoru OKURA ,  Yuki ITO ,  Kohei YAMADA

IPC: H01J37/04 ,  H01J37/147 ,  A61N5/10

CPC classification number: H01J37/045 ,  H01J37/1474 ,  A61N5/1067 ,  A61N5/1071 ,  H01J2237/24507 ,  H01J2237/0473 ,  A61N2005/1087

Abstract: In a particle beam irradiation system, upon receipt of a signal to stop irradiation of a charged particle beam, the signal outputted from a scanning controller, an accelerator and transport system controller stops emission of the charged particle beam from a charged particle beam generation unit to the irradiation unit, the scanning controller determines, according to an irradiation dose of the charged particle beam at one of a plurality of spots that has been irradiated with the charged particle beam until immediately before the accelerator and transport system controller stops the emission, the irradiation dose measured by the irradiation dose monitor from when the signal to stop the irradiation is outputted, whether or not to skip the irradiation of the charged particle beam at another one of the plurality of spots subsequent to the one of the plurality of spots, so as to control the accelerator and transport system controller.

公开(公告)号：US20190202000A1

公开(公告)日：2019-07-04

申请号：US16322594

申请日：2017-08-04

Applicant: Consorzio Di Ricerca Hypatia

Inventor： Gildo Di Domenico ,  Flavio Lucibello ,  Lorenzo Scatena ,  Mariano Zarcone

IPC: B23K15/00 ,  B33Y30/00 ,  B23K15/02 ,  H01J37/147 ,  H01J37/12 ,  H01J25/10 ,  H01J37/06 ,  H01J37/315 ,  H01J37/301

CPC classification number: B23K15/0086 ,  B22F3/1055 ,  B22F2003/1056 ,  B23K15/0026 ,  B23K15/02 ,  B33Y30/00 ,  H01J25/02 ,  H01J25/04 ,  H01J25/10 ,  H01J25/36 ,  H01J25/42 ,  H01J37/06 ,  H01J37/12 ,  H01J37/147 ,  H01J37/301 ,  H01J37/315 ,  H01J37/3178 ,  H01J2237/0473 ,  H01J2237/3104 ,  H01J2237/3128 ,  H03B9/04 ,  Y02P10/295

Abstract: An electron beam 3D printing machine (1), comprising a chamber (2) for generating and accelerating an electron beam and an operating chamber (3) in which a metal powder is melted, with the consequent production of a three-dimensional product. The chamber (2) for generating and accelerating an electron beam houses means (4) for generating an electron beam and means (6) for accelerating the generated electron beam, while the operating chamber (3) houses at least one platform (16) for depositing the metal powder, metal powder handling means (18) and electron beam deflection means (15). The accelerator means for the generated electron beam comprise a series of resonant cavities fed with an alternating signal.

公开(公告)号：US20190074158A1

公开(公告)日：2019-03-07

申请号：US15905896

申请日：2018-02-27

Applicant: Toshiba Memory Corporation

Inventor： Tsuyoshi Fujii ,  Takayuki Ito ,  Yasunori Oshima

IPC: H01J37/24 ,  H01J37/317 ,  H01J37/147 ,  H01J37/08 ,  H01J37/20

CPC classification number: H01J37/243 ,  H01J37/08 ,  H01J37/1477 ,  H01J37/20 ,  H01J37/3023 ,  H01J37/3171 ,  H01J2237/032 ,  H01J2237/047 ,  H01J2237/0473 ,  H01J2237/1507 ,  H01J2237/20207 ,  H01J2237/30461 ,  H01J2237/31703 ,  H01J2237/3171

Abstract: In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.

公开(公告)号：US09799492B2

公开(公告)日：2017-10-24

申请号：US15227298

申请日：2016-08-03

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Julian Blake

IPC: H01J37/32 ,  H01J37/317 ,  C23C14/22 ,  C23C14/56 ,  C23C16/44 ,  C23C16/50

CPC classification number: H01J37/3244 ,  C23C14/22 ,  C23C14/564 ,  C23C16/4404 ,  C23C16/50 ,  H01J37/3171 ,  H01J37/32477 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/028 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/057 ,  H01J2237/1207 ,  H01J2237/3321 ,  H01J2237/334

Abstract: Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.

公开(公告)号：US09748071B2

公开(公告)日：2017-08-29

申请号：US14765759

申请日：2014-02-05

Applicant: Massachusetts Institute of Technology

Inventor： Stephen Angelo Guerrera ,  Akintunde I. Akinwande

IPC: H01J37/073 ,  H01L21/00 ,  H01J37/065 ,  H01J37/317 ,  H01J37/30

CPC classification number: H01J37/073 ,  H01J37/065 ,  H01J37/3007 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0473 ,  H01J2237/063 ,  H01J2237/3175 ,  H01J2237/31781 ,  H01L21/00

Abstract: An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.

公开(公告)号：US20170162363A1

公开(公告)日：2017-06-08

申请号：US15286678

申请日：2016-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIN KWAN KIM ,  MIN KOOK KIM ,  JUNG SOO KIM ,  YU SIN YANG ,  CHUNG SAM JUN

IPC: H01J37/22 ,  H01J37/28

CPC classification number: H01J37/222 ,  G01N23/2251 ,  G01N2223/418 ,  G01N2223/423 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0473 ,  H01J2237/226 ,  H01J2237/24485 ,  H01J2237/2803 ,  H01J2237/2804 ,  H01J2237/2805 ,  H01J2237/2806

Abstract: A structure analysis method using a scanning electron microscope includes irradiating a sample with an electron beam having a first landing energy to obtain a first image at a first depth of the sample and accelerating the electron beam to have a second landing energy higher than the first landing energy to obtain a second image at a second depth of the sample.

公开(公告)号：US09613779B2

公开(公告)日：2017-04-04

申请号：US14940102

申请日：2015-11-12

Applicant: Shuai Li ,  Wei He ,  Zhongwei Chen

Inventor： Shuai Li ,  Wei He ,  Zhongwei Chen

IPC: H01J37/21 ,  H01J37/145 ,  H01J37/147 ,  H01J37/28

CPC classification number: H01J37/145 ,  H01J37/1477 ,  H01J37/21 ,  H01J37/28 ,  H01J2237/0473 ,  H01J2237/2802

Abstract: The present invention provides a scanning transmission electron microscope (STEM). In the STEM, a specimen is sandwiched between a variable axis objective lens and a variable axis collection lens. The axis of the collection lens varies along with the variation of the objective lens axis in a coordinated manner. The STEM of the invention exhibits technical merits such as large scanning field, high image resolution across the entire scanning field, and high throughput, among others.

公开(公告)号：US09443692B2

公开(公告)日：2016-09-13

申请号：US14803964

申请日：2015-07-20

Applicant: FEI Company

Inventor： Mostafa Maazouz

IPC: H01J3/14 ,  H01J37/07 ,  H01J37/21 ,  H01J37/10 ,  H01J37/04 ,  H01J37/305 ,  H01J3/02 ,  H01J37/06 ,  H01J37/147 ,  H01J37/248

CPC classification number: H01J37/07 ,  H01J3/026 ,  H01J37/04 ,  H01J37/06 ,  H01J37/10 ,  H01J37/1477 ,  H01J37/21 ,  H01J37/248 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/0473 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/1518 ,  H01J2237/1534 ,  H01J2237/28 ,  H01J2237/31749

Abstract: The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.