公开(公告)号：US11609505B2

公开(公告)日：2023-03-21

申请号：US17222696

申请日：2021-04-05

Applicant: Applied Materials, Inc.

Inventor： Mangesh Ashok Bangar ,  Gautam Pisharody ,  Lancelot Huang ,  Alan L. Tso ,  Douglas A. Buchberger, Jr. ,  Huixiong Dai ,  Dmitry Lubomirsky ,  Srinivas D. Nemani ,  Christopher Siu Wing Ngai

IPC: G03F7/20 ,  G01N27/10

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for verification and re-use of process fluids. The apparatus generally includes a tool for performing lithography, and a recirculation path coupled to the tool. The recirculation path generally includes a collection unit coupled at first end to a first end of the tool, and a probe coupled at a first end to a second end of the collection unit, the probe for determining one or more characteristics of a fluid flowing from the tool. The recirculation path of the apparatus further generally includes a purification unit coupled at a first end to a third end of the collection unit, the purification unit further coupled at a second end to a second end of the probe, the purification unit for changing a characteristic of the fluid.

公开(公告)号：US11562890B2

公开(公告)日：2023-01-24

申请号：US16212580

申请日：2018-12-06

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Xiao Ming He ,  Jennifer Y. Sun ,  Xiaowei Wu ,  Laksheswar Kalita ,  Soonam Park

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/46

Abstract: A substrate support assembly includes a ground shield and a heater that is surrounded by the ground shield. The ground shield includes a plate. In one embodiment, the ground shield is composed of a ceramic body and includes an electrically conductive layer, a first protective layer on the upper surface of the plate. In another embodiment, the ground shield is composed of an electrically conductive body and a first protective layer on the upper surface of the plate.

公开(公告)号：US11533783B2

公开(公告)日：2022-12-20

申请号：US16515993

申请日：2019-07-18

Applicant: Applied Materials, Inc.

Inventor： Mauro Cimino ,  Don Channa Kaluarachchi ,  Son Phi ,  Ramyashree Vishnuprasad ,  Dmitry Lubomirsky

IPC: H05B3/68 ,  H05B1/02 ,  G01K7/18 ,  H01J37/32 ,  H01L21/67

Abstract: A plurality of heating zones in a substrate support assembly in a chamber is independently controlled. Temperature feedback from a plurality of temperature detectors is provided as a first input to a process control algorithm, which may be a closed-loop algorithm. A second input to the process control algorithm is targeted values of heater temperature for one or more heating zones, as calculated using a model. Targeted values of heater power needed for achieving the targeted values of heater temperature for the one or more heating zones is calculated. Chamber hardware is controlled to match the targeted value of heater temperature that is correlated with the wafer characteristics corresponding to the current optimum values of the one or more process parameters.

公开(公告)号：US11302519B2

公开(公告)日：2022-04-12

申请号：US14849296

申请日：2015-09-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Srinivas D. Nemani ,  Jeremiah T. Pender ,  Qingjun Zhou ,  Dmitry Lubomirsky ,  Sergey G. Belostotskiy

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/02

Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

公开(公告)号：US11257693B2

公开(公告)日：2022-02-22

申请号：US14593873

申请日：2015-01-09

Applicant: Applied Materials, Inc.

Inventor： Son Nguyen ,  Dmitry Lubomirsky ,  Chungman Kim ,  Kirby H. Floyd

IPC: H01L21/00 ,  H01L21/67

Abstract: A semiconductor processing system may include a substrate pedestal. The system may also include at least one fluid channel having a delivery portion configured to deliver a temperature controlled fluid to the substrate pedestal, and having a return portion configured to return the temperature controlled fluid from the substrate pedestal. The system may also include a heater coupled with the delivery portion of the at least one fluid channel. The system may also include a temperature measurement device coupled with the return portion of the at least one fluid channel, and the temperature measurement device may be communicatively coupled with the heater.

公开(公告)号：US11217462B2

公开(公告)日：2022-01-04

申请号：US16834109

申请日：2020-03-30

Applicant: Applied Materials, Inc.

Inventor： David Benjaminson ,  Dmitry Lubomirsky ,  Ananda Seelavanth Math ,  Saravanakumar Natarajan ,  Shubham Chourey

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  H01L21/324

Abstract: A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a workpiece includes flowing a heat exchange fluid through a thermal sink to establish a reference temperature to a puck, raising temperatures of radially inner and outer portions of the puck to first and second temperatures greater than the reference temperature, by activating respective first and second heating devices disposed in thermal communication with the radially inner and outer portions of the puck, and placing the workpiece on the puck.

公开(公告)号：US11164724B2

公开(公告)日：2021-11-02

申请号：US16000469

申请日：2018-06-05

Applicant: Applied Materials, Inc.

Inventor： Sang Won Kang ,  Nicholas Celeste ,  Dmitry Lubomirsky ,  Peter Hillman ,  Douglas Brenton Hayden ,  Dongqing Yang

IPC: H01J37/32

Abstract: Embodiments of the present disclosure generally provide improved methods for processing substrates with improved process stability, increased mean wafers between clean, and/or improved within wafer uniformity. One embodiment provides a method for seasoning one or more chamber components in a process chamber. The method includes placing a dummy substrate in the process chamber, flowing a processing gas mixture to the process chamber to react with the dummy substrate and generate a byproduct on the dummy substrate, and annealing the dummy substrate to sublimate the byproduct while at least one purge conduit of the process chamber is closed.

公开(公告)号：US10964512B2

公开(公告)日：2021-03-30

申请号：US15942051

申请日：2018-03-30

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/67 ,  C23C16/00

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

公开(公告)号：US10920319B2

公开(公告)日：2021-02-16

申请号：US16245698

申请日：2019-01-11

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Soonam Park ,  Dmitry Lubomirsky ,  Tien Fak Tan ,  LokKee Loh ,  Saravjeet Singh ,  Tae Won Kim

IPC: C23C16/455 ,  C23C16/34 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/285 ,  C23C16/458

Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

公开(公告)号：US10755900B2

公开(公告)日：2020-08-25

申请号：US15965794

申请日：2018-04-27

Applicant: Applied Materials, Inc.

Inventor： Toan Tran ,  Laksheswar Kalita ,  Tae Won Kim ,  Dmitry Lubomirsky ,  Xiaowei Wu ,  Xiao-Ming He ,  Cheng-Hsuan Chou ,  Jennifer Y. Sun

IPC: C23C16/40 ,  H01J37/32 ,  C23C16/02 ,  C23C28/04 ,  C23C16/455 ,  C23C16/04 ,  C23C16/44 ,  C23C24/04 ,  C23C18/36 ,  C25D7/12

Abstract: A method of applying a multi-layer plasma resistant coating on an article comprises performing plating or ALD to form a conformal first plasma resistant layer on an article, wherein the conformal first plasma resistant layer is formed on a surface of the article and on walls of high aspect ratio features in the article. The conformal first plasma resistant coating has a porosity of approximately 0% and a thickness of approximately 200 nm to approximately 1 micron. One of electron beam ion assisted deposition (EB-IAD), plasma enhanced chemical vapor deposition (PECVD), aerosol deposition or plasma spraying is then performed to form a second plasma resistant layer that covers the conformal first plasma resistant layer at a region of the surface but not at the walls of the high aspect ratio features.