公开(公告)号：US20190057857A1

公开(公告)日：2019-02-21

申请号：US16167225

申请日：2018-10-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Atsuki Fukazawa ,  Eiichiro Shiba ,  Shinya Ueda ,  Taishi Ebisudani ,  SeungJu Chun ,  YongMin Yoo ,  YoonKi Min ,  SeYong Kim ,  JongWan Choi

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

公开(公告)号：US09627221B1

公开(公告)日：2017-04-18

申请号：US14981434

申请日：2015-12-28

Applicant: ASM IP Holding B.V.

Inventor： Masaru Zaitsu ,  Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  C23C16/045 ,  C23C16/45534 ,  C23C16/4554 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method of continuous fabrication of a layered structure on a substrate having a patterned recess, includes: (i) forming a dielectric layer on a substrate having a patterned recess in a reaction chamber by PEALD using a first RF power; (ii) continuously after completion of step (i) without breaking vacuum, etching the dielectric layer on the substrate in the reaction chamber by PEALE using a second RF power, wherein a pressure of the reaction chamber is controlled at 30 Pa to 1,333 Pa throughout steps (i) and (ii); a noble gas is supplied to the reaction chamber continuously throughout steps (i) and (ii); and the second RF power is higher than the first RF power.

公开(公告)号：US20160211147A1

公开(公告)日：2016-07-21

申请号：US14598532

申请日：2015-01-16

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069

Abstract: A method for etching a layer on a substrate includes at least one etching cycle, wherein an etching cycle includes: continuously providing an inert gas into the reaction space; providing a pulse of an etching gas into the continuous inert gas flow upstream of the reaction space to chemisorb the etching gas in an unexcited state on a surface of the substrate; and providing a pulse of RF power discharge between electrodes to generate a reactive species of the inert gas in the reaction space so that the layer on the substrate is etched.

Abstract translation: 蚀刻基板上的层的方法包括至少一个蚀刻循环，其中蚀刻循环包括：向反应空间连续提供惰性气体; 向所述反应空间上游的所述连续惰性气体流提供蚀刻气体的脉冲，以在所述基板的表面上化学吸附处于未激发状态的蚀刻气体; 并且在电极之间提供RF功率放电的脉冲，以在反应空间中产生惰性气体的反应物质，从而蚀刻衬底上的层。

公开(公告)号：US09396956B1

公开(公告)日：2016-07-19

申请号：US14598532

申请日：2015-01-16

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa

IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31111 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069

Abstract: A method for etching a layer on a substrate includes at least one etching cycle, wherein an etching cycle includes: continuously providing an inert gas into the reaction space; providing a pulse of an etching gas into the continuous inert gas flow upstream of the reaction space to chemisorb the etching gas in an unexcited state on a surface of the substrate; and providing a pulse of RF power discharge between electrodes to generate a reactive species of the inert gas in the reaction space so that the layer on the substrate is etched.

Abstract translation: 蚀刻基板上的层的方法包括至少一个蚀刻循环，其中蚀刻循环包括：向反应空间连续提供惰性气体; 向所述反应空间上游的所述连续惰性气体流提供蚀刻气体的脉冲，以在所述基板的表面上化学吸附处于未激发状态的蚀刻气体; 并且在电极之间提供RF功率放电的脉冲，以在反应空间中产生惰性气体的反应物质，从而蚀刻衬底上的层。

公开(公告)号：US20160168699A1

公开(公告)日：2016-06-16

申请号：US14568647

申请日：2014-12-12

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: C23C16/44 ,  C23C16/34 ,  C23C16/40 ,  C23C16/505 ,  C23C16/455

CPC classification number: C23C16/4402 ,  C23C16/34 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/45561 ,  C23C16/505

Abstract: A method for forming a metal oxide or nitride film on a substrate by plasma-enhanced atomic layer deposition (PEALD), includes: introducing an amino-based metal precursor in a pulse to a reaction space where a substrate is placed, using a carrier gas; and continuously introducing a reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of the precursor and the pulse of RF power do not overlap, wherein conducted is at least either step (a) comprising passing the carrier gas through a purifier for reducing impurities before mixing the carrier gas with the precursor, or step (b) introducing the reactant gas at a flow rate such that a partial pressure of the reactant gas relative to the total gas flow provided in the reaction space is 15% or less.

Abstract translation: 通过等离子体增强原子层沉积（PEALD）在衬底上形成金属氧化物或氮化物膜的方法包括：使用载气将脉冲中的氨基类金属前体引入放置衬底的反应空间 ; 并将反应气体连续地引入到反应空间中; 将RF功率脉冲施加到反应空间，其中前体的脉冲和RF功率的脉冲不重叠，其中传导至少是步骤（a），其包括使载气通过净化器以减少混合之前的杂质 载体气体与前体反应，或者步骤（b）以使得反应气体相对于在反应空间中提供的总气流的分压为15％以下的流量引入反应气体。

公开(公告)号：US09343297B1

公开(公告)日：2016-05-17

申请号：US14693138

申请日：2015-04-22

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/00 ,  H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/45531 ,  C23C16/4554 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02142 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/02323 ,  H01L21/02329 ,  H01L21/0234

Abstract: A single-phase multi-element film constituted by at least four elements is formed on a substrate by plasma-enhanced atomic layer deposition (PEALD) conducting one or more process cycles. Each process cycle includes: (i) forming an integrated multi-element layer constituted by at least three elements on a substrate by PEALD using at least one precursor; and (ii) treating a surface of the integrated multi-element layer with a reactive oxygen, nitrogen, and/or carbon in the absence of a precursor for film formation so as to incorporate at least one new additional element selected from oxygen, nitrogen, and carbon into the integrated multi-element layer.

Abstract translation: 通过进行一个或多个工艺循环的等离子体增强原子层沉积（PEALD）在衬底上形成由至少四个元件构成的单相多元件膜。 每个工艺循环包括：（i）使用至少一种前体，通过PEALD在衬底上形成由至少三个元件构成的集成多元件层; 和（ii）在没有用于成膜的前体的情况下用活性氧，氮和/或碳处理所述整合的多元素层的表面，以便引入至少一种选自氧，氮， 和碳进入集成的多元素层。

公开(公告)号：US09023737B2

公开(公告)日：2015-05-05

申请号：US13923197

申请日：2013-06-20

Applicant: ASM IP Holding B.V.

Inventor： Julien Beynet ,  Ivo Raaijmakers ,  Atsuki Fukazawa

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/02318 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02348

Abstract: A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and/or holes and a portion of the film deposited on top and bottom surfaces of the trenches and/or holes.

Abstract translation: 一种形成共形，均匀的电介质膜的方法包括：通过使用含有硅和碳，氮，卤素，氢和/或氧的气体的循环沉积在衬底的沟槽和/或空穴中形成保形电介质膜， 在没有致孔剂气体的情况下; 并对保形电介质膜进行热处理，并继续进行热处理，超出了从膜中去除基本上所有不需要的碳的点，并进一步继续进行热处理，以使沉积在侧壁上的薄膜的一部分基本上均匀的膜性能 的沟槽和/或孔，并且一部分膜沉积在沟槽和/或孔的顶表面和底表面上。

公开(公告)号：US20140273531A1

公开(公告)日：2014-09-18

申请号：US14062328

申请日：2013-10-24

Applicant: ASM IP HOLDING B.V.

Inventor： Antti J. Niskanen ,  Shang Chen ,  Viljami Pore ,  Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/02

CPC classification number: H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45542 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L29/66795

Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).

公开(公告)号：US08784951B2

公开(公告)日：2014-07-22

申请号：US13679502

申请日：2012-11-16

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuka

IPC: H01L21/31 ,  C23C16/00 ,  C23C16/50 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/24 ,  C23C16/505 ,  H01L21/02

CPC classification number: H01L21/02167 ,  C23C16/24 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45542 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/32055

Abstract: A method of forming an insulation film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: (i) adsorbing a non-excited non-halide precursor having four or more silicon atoms in its molecule onto a substrate placed in a reaction space; (ii) supplying an oxygen-free reactant to the reaction space without applying RF power so as to expose the precursor-adsorbed substrate to the reactant; and (iii) after step (ii), applying RF power to the reaction space while the oxygen-free reactant is supplied in the reaction space; and (iv) repeating steps (i) to (iii) as a cycle, thereby depositing an insulation film on the substrate.

Abstract translation: 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成绝缘膜的方法包括：（i）将其分子中具有四个或更多个硅原子的未激发的非卤化物前体吸附到放置在 反应空间; （ii）在不施加RF功率的情况下向反应空间供应无氧反应物，以将前体吸附的基底暴露于反应物; 和（iii）在步骤（ii）之后，将RF功率施加到反应空间，同时在反应空间中供应无氧反应物; 和（iv）重复步骤（i）至（iii）作为循环，从而在基材上沉积绝缘膜。

公开(公告)号：US20140141625A1

公开(公告)日：2014-05-22

申请号：US13679502

申请日：2012-11-16

Applicant: ASM IP HOLDING B.V.

Inventor： Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/02

CPC classification number: H01L21/02167 ,  C23C16/24 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45542 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/32055

Abstract: A method of forming an insulation film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: (i) adsorbing a non-excited non-halide precursor having four or more silicon atoms in its molecule onto a substrate placed in a reaction space; (ii) supplying an oxygen-free reactant to the reaction space without applying RF power so as to expose the precursor-adsorbed substrate to the reactant; and (iii) after step (ii), applying RF power to the reaction space while the oxygen-free reactant is supplied in the reaction space; and (iv) repeating steps (i) to (iii) as a cycle, thereby depositing an insulation film on the substrate.

Abstract translation: 通过等离子体增强原子层沉积（PEALD）在半导体衬底上形成绝缘膜的方法包括：（i）将其分子中具有四个或更多个硅原子的未激发的非卤化物前体吸附到放置在 反应空间; （ii）在不施加RF功率的情况下向反应空间供应无氧反应物，以将前体吸附的基底暴露于反应物; 和（iii）在步骤（ii）之后，将RF功率施加到反应空间，同时在反应空间中供应无氧反应物; 和（iv）重复步骤（i）至（iii）作为循环，从而在基材上沉积绝缘膜。